PART |
Description |
Maker |
EDI8L24128C12BC EDI8L24128C15BC EDI8L24128C12BI ED |
128Kx24 Asynchronous SRAM, 5V
|
WEDC[White Electronic Designs Corporation]
|
EDI8L24129V EDI8L24129V12BC EDI8L24129V10BC EDI8L2 |
128Kx24 SRAM 3.3 Volt(128Kx24, 3.3V,CMOS静态RAM) 500MHz Rail-to-Rail Amplifiers; Temperature Range: -40°C to 85°C; Package: 8-SOIC T&R
|
White Electronic Designs Corporation
|
M68AF511A M68AF511AL55MC1T M68AF511AL55MC6T M68AF5 |
4 Mbit (512K x8) / 5V Asynchronous SRAM 4 Mbit (512K x8), 5V Asynchronous SRAM(512K X 8 SRAM 5V SOP32 ,I-Temp) 4 Mbit (512K x8), 5V Asynchronous SRAM 4兆位(为512k × 8),5V的异步SRAM
|
STMICROELECTRONICS[STMicroelectronics] ST Microelectronics 意法半导 STMicroelectronics N.V.
|
GS71024T-8T GS71024T-10T GS71024T-10IT GS71024U-10 |
8ns 64K x 24 1.5Mb asynchronous SRAM 1.5Mb4K x 24Bit)Asynchronous SRAM(1.5M位(64K x 24位)异步静态RAM) 即:1.5MB4K的x 24位)异步SRAM50万位4K的24位)异步静态RAM)的 x24 SRAM x24的SRAM
|
GSI Technology, Inc. Electronic Theatre Controls, Inc.
|
M68AF127BL55MC6 M68AF127BMC M68AF127B M68AF127BB M |
1Mbit 128K x8, 5V Asynchronous SRAM 1Mbit28K的8V的异步SRAM AML22 Series, Electronic Control Pushbutton, Square, Standard Bezel, Lighted, 1 LED, DPDT, Momentary Action, Snap in panel mount 1 MBIT (128K X8) 5.0V ASYNCHRONOUS SRAM
|
STMicroelectronics N.V. 意法半导 STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
|
M68AW127B M68AW127BL70MC1T M68AW127BL70MC6T M68AW1 |
1Mbit 128K x8 / 3.0V Asynchronous SRAM CAC 6C 6#16S SKT PLUG 1Mbit 128K x8, 3.0V Asynchronous SRAM 1Mbit28K的8.0V异步SRAM
|
ST Microelectronics 意法半导 STMicroelectronics N.V.
|
AS7C164 AS7C164-20 AS7C164-20JC AS7C164-12 AS7C164 |
8K X 8 STANDARD SRAM, 12 ns, PDSO28 SRAM - 5V Fast Asynchronous 5V 8K X 8 CMOS SRAM
|
ALSC[Alliance Semiconductor Corporation]
|
IDT70T659S8BF IDT70T659S8BC IDT70T659S8BFI IDT70T6 |
High-speed 2.5V 128 x 36 asynchronous dual-port static RAM, 10ns High-speed 2.5V 128 x 36 asynchronous dual-port static RAM, 8ns High-speed 2.5V 128 x 36 asynchronous dual-port static RAM, 15ns JFET-Input Operational Amplifier 14-SOIC -40 to 85 256K X 36 DUAL-PORT SRAM, 12 ns, PQFP208 HIGH-SPEED 2.5V 256/128K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE 128K X 36 DUAL-PORT SRAM, 10 ns, PQFP208 JFET-Input Operational Amplifier 14-SOIC 0 to 70 高.5V56/128K.3V 5011 2.5V的接口36 ASYNCHRONO美国双端口静RAM HIGH-SPEED 2.5V 256/128K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE 128K X 36 DUAL-PORT SRAM, 12 ns, PBGA256 HIGH-SPEED 2.5V 256/128K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE 128K X 36 DUAL-PORT SRAM, 12 ns, PBGA208 JFET-Input Operational Amplifier 14-SOIC 0 to 70 128K X 36 DUAL-PORT SRAM, 12 ns, PQFP208 High-speed 2.5V 128 x 36 asynchronous dual-port static RAM, 12ns
|
Integrated Device Techn... Integrated Device Technology, Inc. IDT
|
HM62W8511HCJPI-12 |
Memory>Fast SRAM>Asynchronous SRAM
|
Renesas
|
HM62W4100HCJP-12 |
Memory>Fast SRAM>Asynchronous SRAM
|
Renesas
|
HM621400HCJP-12 HM621400HCLJP-12 |
Memory>Fast SRAM>Asynchronous SRAM
|
Renesas
|