PART |
Description |
Maker |
PSHI50D-06 PSHI50D_06 PSHI50D/06 PSHI50D06 |
IGBT Module IGBT Module Short Circuit SOA Capability
|
Powersem GmbH
|
FZ1200R33KF2C FZ1200R33KF2C-B5 |
IGBT Power Module IGBT-Wechselrichter / IGBT-inverter
|
eupec GmbH
|
IXGE75N100Z IXGE50N90Z IXTE9N65X4U IXGE50N50Z |
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1KV V(BR)CES | 75A I(C) TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 900V V(BR)CES | 50A I(C) TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 650V V(BR)DSS | 9A I(D) 晶体管| MOSFET功率模块|独立|650V五(巴西)直| 9A条(丁) TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 500V V(BR)CES | 50A I(C) 晶体管| IGBT功率模块|独立| 500V五(巴西)国际消费电子展| 50A条一(c
|
IXYS, Corp.
|
FZ800R33KF1 FS150R12KF4 FD400R12KF4 |
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 3.3KV V(BR)CES | 800A I(C) TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 1.2KV V(BR)CES | 150A I(C) TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.2KV V(BR)CES | 400A I(C) 晶体管| IGBT功率模块|独立| 1.2KV五(巴西)国际消费电子展|四楼一(c
|
Infineon Technologies AG
|
GP200MKS12 |
IGBT Chopper Module Preliminary Information 200 A, 1200 V, N-CHANNEL IGBT
|
Dynex Semiconductor, Ltd. DYNEX[Dynex Semiconductor]
|
CPU165MM |
IGBT SIP MODULE Short Circuit Rated Fast IGBT
|
IRF[International Rectifier]
|
CPV363M4KPBF |
IGBT SIP Module (Short Circuit Rated Ultrafast IGBT)
|
Vishay Siliconix
|
CPV362MM |
IGBT SIP MODULE Short Circuit Rated Fast IGBT
|
IRF[International Rectifier]
|
7MBR15NE120 |
IGBT MODULE(1200V/15A/PIM) 15 A, 1200 V, N-CHANNEL IGBT
|
Fuji Electric Holdings Co., Ltd. FUJI[Fuji Electric]
|
APTGF100A120TG |
Phase leg NPT IGBT Power Module 135 A, 1200 V, N-CHANNEL IGBT
|
Microsemi, Corp. MICROSEMI[Microsemi Corporation]
|
DIM200PHM33-A000 |
Half Bridge IGBT Module Preliminary Information 200 A, 3300 V, N-CHANNEL IGBT
|
Dynex Semiconductor, Ltd. Dynex Semiconductor Ltd. DYNEX[Dynex Semiconductor]
|