| PART |
Description |
Maker |
| R878 R87810 L9337 |
High power LED for optical switches
4.2 mm, 1 ELEMENT, INFRARED LED, 870 nm
|
Hamamatsu Corporation
|
| L6895-1006 L6895-10 |
Infrared LED High-power LED with miniature package
|
Hamamatsu Corporation
|
| HIR36-01C HIR36-01C_S32 HIR36-01C/S32 HIR36-01C-S3 |
High Power Infrared LED
|
Everlight Electronics Co., Ltd
|
| L2656-03 L2656 |
High power GaAIAs infrared LED
|
Hamamatsu Photonics
HAMAMATSU[Hamamatsu Corporation]
|
| L7558-01 L7558 |
High-speed/ high-power infrared LED for spatial light transmission
High-speed, high-power infrared LED for spatial light transmission
|
Hamamatsu Photonics
HAMAMATSU[Hamamatsu Corporation]
|
| VSMF9700-GS18 VSMF9700-GS08 |
High Speed Infrared Emitting Diode, 890 nm
2.4 mm, 1 ELEMENT, INFRARED LED, 890 nm
|
Vishay Siliconix
VISHAY SEMICONDUCTORS
|
| SID1050CM SID1050M |
Infrared LED Lamp
5PHI ROUND INFRARED LED (DIRECT MOUNT)
|
Sanken electric
|
| STS7103 |
Infrared LED, 3.9 mm, 1 ELEMENT, INFRARED LED, 950 nm, HERMETIC SEALED, TO-18, 2 PIN
|
Vishay Semiconductors
|
| MIE-514H4 514H4 |
GaAlAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE 大功率的GaAIAs的T 1 3 / 4包装红外发光二极
Infrared Emitting Diodes (IRED)
|
Unity Opto Technology Co., Ltd.
UOT[Unity Opto Technology]
|
| QED123 QED122 QED121 QED122A3R0 |
PLASTIC INFRARED LIGHT EMITTING DIODE 4.95 mm, 1 ELEMENT, INFRARED LED, 890 nm
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
|
| CQX15 |
GaAs INFRARED EMITTING DIODE 4.67 mm, 1 ELEMENT, INFRARED LED, 940 nm
|
Fairchild Semiconductor, Corp.
|
