| PART |
Description |
Maker |
| HYB3116405BT-50 HYB5117405BJ-50 HYB3117405BJ-50 HY |
RES 100K-OHM 1% 0.063W 200PPM THICK-FILM SMD-0402 10K/REEL-7IN-PA 4M X 4 EDO DRAM, 60 ns, PDSO24
High-Speed Fully-Differential Amplifiers 8-SOIC 0 to 70 4M X 4 EDO DRAM, 60 ns, PDSO24
4M×4-Bit Dynamic RAM(2k-Refresh,Hyper Page Mode - EDO)(4M×4动RAM (2K刷新,超级页面EDO))
4M×4-Bit Dynamic RAM(4k-Refresh,Hyper Page Mode - EDO)(4M×4动RAM (4K刷新,超级页面EDO))
4M x 4-Bit Dynamic RAM 2k & 4k Refresh
|
SIEMENS AG
http://
Siemens Semiconductor Group
|
| HYB5116405BJ-50 HYB5116405BJ-60 HYB5117405BJ-70 HY |
4M x 4-Bit Dynamic RAM 2k & 4k Refresh 4M X 4 EDO DRAM, 70 ns, PDSO24
POWERLINE: RP12-S_DA - 2:1 Wide Input Voltage Range- 12 Watts Output Power- 1.6kVDC Isolation- Over Current Protection- Five-Sided Continuous Shield- Standard DIP24 and SMD-Pinning- Efficiency to 88%
4M x 4-Bit Dynamic RAM 2k & 4k Refresh
|
SIEMENS A G
SIEMENS AG
http://
Siemens Semiconductor G...
|
| AS4SD8M16DG-75/IT |
Self Refresh Mode
|
Micross Components
|
| IS42VM16800G IS42SM16800G-6BLI IS42VM16800G-6BLI I |
Auto refresh and self refresh
2M x 16Bits x 4Banks Mobile Synchronous DRAM
|
Integrated Silicon Solu...
|
| HM5116405S-5 HM5116405S-6 HM5116405S-7 HM5117405TS |
16M EDO DRAM (4-MWORD X 4-BIT) 4K REFRESH / 2K REFRESH
|
HITACHI[Hitachi Semiconductor]
|
| HMD4M32M2EG-5 HMD4M32M2EG-6 |
16Mbyte(4Mx32) 72-pin SIMM EDO Mode, 4K Refresh, 5V
|
Hanbit Electronics Co.,Ltd.
|
| HMD4M32M2VEG-5 HMD4M32M2VEG-6 HMD4M32M2VE |
16Mbyte(4Mx32) DRAM SIMM EDO MODE, 4K Refresh, 3.3V
|
Hanbit Electronics Co.,Ltd
|
| AS4LC1M168 AS4LC1M16883C AS4LC1M16 |
1 MEG x 16 DRAM 3.3V, EDO PAGE MODE, OPTIONAL EXTENDED REFRESH
|
ASI
ETC[ETC]
AUSTIN[Austin Semiconductor]
|
| HMD4M32M8GL-5 HMD4M32M8GL-6 HMD4M32M8GL |
16Mbyte(4Mx32) Fast Page Mode, 4K Refresh 72Pin SIMM
|
Hanbit Electronics Co.,Ltd
|
| HMD2M32M4EG-5 HMD2M32M4EG-6 HMD2M32M4EG-7 HMD2M32M |
8Mbyte(2Mx32) EDO Mode, 1K Refresh 72Pin SIMM, 5V Design
|
Hanbit Electronics Co.,Ltd
|
| HMD4M32M2G-5 HMD4M32M2G-6 HMD4M32M2G |
16Mbyte(4Mx32) 72-pin SIMM Fast Page Mode, 4K Refresh, 5V
|
Hanbit Electronics Co.,Ltd
|
| K4F16708112D K4F160811D-B K4F160812D K4F160812D-B |
2M x 8Bit CMOS Dynamic RAM with Fast Page Mode Data Sheet
2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle.
2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle.
|
Samsung Electronic
|
