| PART |
Description |
Maker |
| IKQ40N120CH3 |
Low switching losses IGBT in Highspeed3 technology copacked with soft, fast recovery full current rated anti-parallel Emitter Controlled diode
|
Infineon Technologies A...
|
| IKY50N120CH3 |
Low switching losses IGBT in Highspeed3 technology copacked with soft, fast recovery full current rated anti-parallel Emitter Controlled diode
|
Infineon Technologies A...
|
| HYG30P120H1K1 |
low switching losses
|
HY ELECTRONIC CORP.
|
| IRGP4068DPBF IRGP4068DPBF-15 |
Low Switching Losses
|
International Rectifier
|
| HYG15P120H1K1 |
low switching losses
|
HY ELECTRONIC CORP.
|
| IRGB4059DPBF IRGB4059DPBF-15 |
Low Switching Losses
|
International Rectifier
|
| IRG7PH35UD1PBF IRG7PH35UD1PBF-15 |
Low Switching Losses
|
International Rectifier
|
| BUP202 Q67078-A4401-A2 BUP202SMD |
IGBT Transistor
From old datasheet system
IGBT (Low forward voltage drop High switching speed Low tail current Latch-up free) 12 A, 1000 V, N-CHANNEL IGBT, TO-220
|
Infineon
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| IRFR3410 |
Low Gate-to-Drain Charge to Reduce Switching Losses
|
Kersemi Electronic Co., Ltd.
|
| IKW75N65EL5 |
Best-in-Class tradeoff between conduction and switching losses
|
Infineon Technologies A...
|
