| PART |
Description |
Maker |
| STL8NH3LL |
N-CHANNEL 30 V - 0.012 з - 8 A PowerFLATULTRA LOW GATE CHARGE STripFETMOSFET N沟道30 0.012з - 8甲的PowerFLAT⑩超低栅极电荷STripFET⑩MOSFET
N-CHANNEL 30 V - 0.012 з - 8 A PowerFLAT⑩ ULTRA LOW GATE CHARGE STripFET⑩ MOSFET
N-CHANNEL MOSFET
N-CHANNEL 30 V - 0.012 ?- 8 A PowerFLAT ULTRA LOW GATE CHARGE STripFET MOSFET
|
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| SPN02N60C3 SPN02N60C305 |
New revolutionary high voltage technology Ultra low gate charge Ultra low effective capacitances
|
Infineon Technologies AG
|
| STL55NH3LL |
N-channel 30 V, 0.0079 Ω, 15 A, PowerFLAT (6x5) ultra low gate charge STripFET Power MOSFET
N-channel 30 V, 0.0079 ヘ, 15 A, PowerFLAT⑩ (6x5) ultra low gate charge STripFET⑩ Power MOSFET
|
STMicroelectronics
|
| STFI6N80K5 |
Ultra low gate charge
|
STMicroelectronics
|
| SPN01N60C3 SPN01N60C305 |
New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated
|
Infineon Technologies AG
|
| SPP03N60C3 SPP03N60C309 SPA03N60C3 |
New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated
|
Infineon Technologies AG
|
| SPP04N60C3 SPA04N60C3 SPP04N60C309 |
New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated
|
Infineon Technologies AG
|
| SPP11N65C3 SPA11N65C3 SPI11N65C3 SPP11N65C307 |
New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated
|
Infineon Technologies AG
|
| SPP20N60C309 SPP20N60C3 SPI20N60C3 SPA20N60C3 |
New revolutionary high voltage technology Worldwide best RDS(on) in TO 220 Ultra low gate charge
|
Infineon Technologies AG
|
| STL8NH3LL |
N-CHANNEL 30V - 0.012 Ohm - 8A - PowerFLAT ULTRA LOW GATE CHARGE STRIPFET MOSFET
|
ST Microelectronics
|
| S12NH3LL STS12NH3LL STS12NH3LL_06 STS12NH3LL06 |
N-channel 30V - 0.008ohm - 12A - SO-8 Ultra low gate charge STripFET TM Power MOSFET
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
|
