| PART |
Description |
Maker |
| 0912GN-300 |
GaN Transistors
|
Microsemi
|
| 0912GN-300V |
GaN Transistors
|
Microsemi
|
| 2731GN-110M |
GaN Transistors
|
Microsemi
|
| CGH35030F |
30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX S BAND, GaN, N-CHANNEL, RF POWER, HEMFET
|
Cree, Inc.
|
| RFPP3870 |
GaAs/GaN Push Pull Hybrid GaAs/GaN Push Pull Hybridz
|
RF Micro Devices
|
| GM20022005D |
GaN MMIC
|
RFHIC
|
| CGH40025F |
25 W, RF Power GaN HEMT
|
CREE[Cree, Inc]
|
| QPL1002 QPL1002EVB |
0.03 ?3 GHz GaN LNA
|
TriQuint Semiconductor
|
| TGA2611-SM-15 |
2 6 GHz GaN LNA
|
TriQuint Semiconductor
|
| PDU-G101A |
UV Enhanced GaN Detectors
|
Advanced Photonix
|
| PDU-G105A-SM |
UV Enhanced GaN Detectors
|
Advanced Photonix
|
| GX2441 |
RF POWER GAN TRANSISTOR
|
Polyfet RF Devices
|
|
