PART |
Description |
Maker |
BFY181 |
From old datasheet system HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor)
|
Siemens Semiconductor Group
|
BFY193 |
HIREL NPN SILICON RF TRANSISTOR (HIREL DISCRETE AND MICROWAVE SEMICONDUCTOR FOR LOW NOISE, HIGH GAIN BROADBAND AMPLIFIERS UP TO 2 GHZ.) From old datasheet system
|
Siemens Semiconductor Group Infineon
|
BFY183 |
HiRel NPN Silicon RF Transistor
|
Infineon Technologies A...
|
BFY40511 |
HiRel NPN Silicon RF Transistor
|
Infineon Technologies AG
|
BFY45011 |
HiRel NPN Silicon RF Transistor
|
Infineon Technologies AG
|
BFY180H BFY180P BFY180 BFY180ES BFY180S |
HiRel NPN Silicon RF Transistor
|
Infineon Technologies AG
|
BFY196P BFY196S BFY196 BFY196H |
HiRel NPN Silicon RF Transistor
|
INFINEON[Infineon Technologies AG]
|
CC5401 |
PNP COMPLEMENTARY SILICON HIGH VOLTAGE TRANSISTO
|
Continental Device India Limited
|
BXY43-T1 |
HiRel Silicon PIN Diode
|
Infineon Technologies A...
|
BAS40 BAS40-T1 |
HiRel Silicon Schottky Diode
|
INFINEON[Infineon Technologies AG]
|
BXY4211 |
HiRel Silicon PIN Diode
|
Infineon Technologies AG
|
UPD23C64040ALGY-XXX-MK UPD23C64040ALGY-XXX-MJ |
HiRel Silicon Diodes; Package: --; Package: -; IF (max): -; VBR (min): -; rF (typ): -; CT (max): - x8 or x16 ROM (Mask Programmable) x8或x16光盘(掩模可编程
|
NEC, Corp.
|