| PART |
Description |
Maker |
| MA603.A.ABK.001 |
Advanced RF Design and Materials
|
Taoglas antenna solutio...
|
| RU5H5R |
N-Channel Advanced Power MOSFET Super High Dense Cell Design
|
Ruichips Semiconductor ...
|
| RU3065L |
N-Channel Advanced Power MOSFET Super High Dense Cell Design
|
Ruichips Semiconductor ...
|
| STP180N55F3 |
This product utilizes the latest advanced design rules of ST’s proprietary STripFET™ technology whic
|
ST Microelectronics, Inc.
|
| DME150-2 DME150-3 |
150 W, 50 V all devices utilize the most advanced design and process technologies, there features provide the most consistent and reliable chip
|
Acrian
|
| DMEG250-3 |
250 W, 50 V all devices utilize the most advanced design and process technologies, there features provide the most consistent and reliable chip
|
Acrian
|
| FQB3N60 |
This N-channel MOSFETS use advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications.
|
Kersemi Electronic Co.,...
|
| BUL57A |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
|
TT electronics Semelab Limited
SEME-LAB[Seme LAB]
|
| BUL74B |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
|
SemeLAB
SEME-LAB[Seme LAB]
|
| BUL54 BUL54A |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
|
SEME-LAB[Seme LAB]
TT electronics Semelab Limited
|
| BUL64B |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
|
SEME-LAB[Seme LAB]
SemeLAB
|
