PART |
Description |
Maker |
MMIX1G320N60B3 |
Medium-Speed Low-Vsat PT IGBT for 5-40 kHz Switching
|
IXYS Corporation
|
BUP313D Q67040-A4228-A2 BUP313-D |
From old datasheet system IGBT With Antiparallel Diode (Low forward voltage drop High switching speed Low tail current Latch-up free) IGBT Duopack (IGBT with Antiparallel ...
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group] Infineon
|
2ED020I12-F |
Dual IGBT Driver IC for eupec Low and Medium Power IGBT Modules
|
eupec GmbH
|
BUP305 BUP305D Q67040-A4225-A2 BUP305-D |
IGBT Duopack (IGBT with Antiparallel ... From old datasheet system IGBT With Antiparallel Diode (Low forward voltage drop High switching speed Low tail current Latch-up free Including fast free-wheel diode)
|
Infineon SIEMENS[Siemens Semiconductor Group] SIEMENS AG
|
IXGM25N100A IXGP12N100 |
Low VCE(sat), High speed IGBT 50 A, 1000 V, N-CHANNEL IGBT, TO-204AE IGBT 20 A, 1000 V, N-CHANNEL IGBT, TO-220AB
|
IXYS, Corp.
|
BUP307D Q67040-A4221-A2 BUP307-D |
IGBT Duopack (IGBT with Antiparallel ... From old datasheet system IGBT With Antiparallel Diode (Low forward voltage drop High switching speed Low tail current Latch-up free Including fast free-wheel diode) 由于IGBT的反平行二极管(低正向压降高开关速度低尾电流的无闩锁包括快速滑行二极管
|
Infineon SIEMENS[Siemens Semiconductor Group] SIEMENS AG Sanyo Electric Co., Ltd.
|
IXGM17N100A IXGH17N100 IXGH17N100A IXGM17N100 |
Low VCE(sat) IGBT, High speed IGBT
|
IXYS[IXYS Corporation]
|
2SD2425 2SD2425AB3 |
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 5A I(C) | TO-243VAR NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING Low freq. power amp., medium-speed switching transistor
|
NEC Corp. NEC Electronics NEC[NEC]
|
IXSM45N100 IXSH45N100 |
1000V IGBT with diode IGBT Discretes: Low Saturation Voltage Types Low VCE(sat) IGBT - Short Circuit SOA Capability
|
IXYS[IXYS Corporation]
|
BAW156 Q62702-A922 |
From old datasheet system Silicon Low Leakage Diode Array (Low-leakage applications Medium speed switching times Common anode)
|
SIEMENS AG Siemens Group Infineon SIEMENS[Siemens Semiconductor Group]
|
2SA1969 |
High-Frequency Medium-Output Amplifier, Medium-Current Ultrahigh-Speed Switching Applications
|
SANYO[Sanyo Semicon Device]
|
BAV170 Q62702-A920 |
From old datasheet system Silicon Low Leakage Diode Array (Low leakage applications Medium speed switching times Common cathode) 硅低漏二极管阵列(低泄漏应用中速切换时间普通阴极)
|
SIEMENS A G SIEMENS[Siemens Semiconductor Group] Infineon SIEMENS AG
|