| PART |
Description |
Maker |
| RMLV0414E-15 |
4Mb Advanced LPSRAM (256-kword × 16-bit)
|
Renesas Electronics Corporation
|
| HM628511HC HM628511HCJP-10 HM628511HCLJP-10 |
4M High Speed SRAM (512-kword x 8-bit)
Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 3300uF; Voltage: 35V; Case Size: 16x35.5 mm; Packaging: Bulk 4分高速SRAM12 - KWord的8位）
4M High Speed SRAM (512-kword x 8-bit) 4分高速SRAM12 - KWord的8位）
|
HITACHI[Hitachi Semiconductor]
Hitachi,Ltd.
|
| AL4CE221 AL4CE211 AL4CE241 |
512, 1K, 2K, 4K, 8K x 9 Advanced Synchronous FIFOs 512，一千，KKK的9高级同步FIFO
|
AverLogic Technologies, Inc.
AverLogic Technologies, Corp.
|
| M372V0405DT0-CFASTPAGEMODE |
4MB x 72 DRAM DIMM with ECC Using 4MB x 16 & 4MB x 4, 4KB Refresh, 3.3V Data Sheet
|
Samsung Electronic
|
| HM628511HI HM628511HJPI-12 HM628511HJPI-15 |
4M High Speed SRAM (512-kword x 8-bit)
|
HITACHI[Hitachi Semiconductor]
|
| HM628511CJPI12 HM628511HCJPI-12 HM628511HCI |
Memory>Fast SRAM>Asynchronous SRAM
Wide Temperature Range Version 4M High Speed SRAM (512-kword 】 8-bit)
Wide Temperature Range Version 4M High Speed SRAM (512-kword × 8-bit)
|
RENESAS[Renesas Electronics Corporation]
|
| HM5216165 HM5216165TT-10H HM5216165TT-12 |
16M LVTTL INTERFACE SDRAM (512-kword x 16-bit x 2-bank)
|
Elpida Memory
|
| HM62V8512CLTTI-7 HM62V8512CI |
Wide Temperature Range Version 4 M SRAM (512-kword ′ 8-bit)
Wide Temperature Range Version 4 M SRAM (512-kword ? 8-bit)
|
Renesas Electronics Corporation
|
| HM62V16514LTTI-5SL |
Wide Temperature Range Version 8 M SRAM (512-kword x 16-bit)
|
Renesas Electronics Corporation.
|
