| PART |
Description |
Maker |
| MRFE6VP61K25GSR5 MRFE6VP61K25HR6 MRFE6VP61K25HR5 M |
RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs
RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs
|
Freescale Semiconductor, Inc
Freescale Semiconductor...
|
| STH140N8F7-2 |
High avalanche ruggedness
N-channel 80 V, 3.3 mOhm typ., 90 A STripFET F7 Power MOSFET in H2PAK-2 package
|
STMicroelectronics
ST Microelectronics
|
| STL90N10F7 |
High avalanche ruggedness
|
STMicroelectronics
|
| STB80N4F6AG |
High avalanche ruggedness
|
STMicroelectronics
|
| IPA60R190E6 IPA60R190E6-15 IPP60R190E6 IPP60R190E6 |
Very high commutation ruggedness
|
Infineon Technologies A...
|
| IPA60R400CE IPD60R400CE |
Very high commutation ruggedness
|
Infineon Technologies A...
|
| STL220N3LLH7 |
High avalanche ruggedness
|
STMicroelectronics
|
| IPA50R380CE |
Very high commutation ruggedness
|
Infineon Technologies A...
|
| IPL60R1K5C6S |
Very high commutation ruggedness
|
Infineon Technologies A...
|
| STH170N8F7-2 |
High avalanche ruggedness
|
STMicroelectronics
|
