PART |
Description |
Maker |
IRFB9N60 IRFB9N60APBF |
Power MOSFET(Vdss=600V/ Rds(on)=0.75ohm/ Id=9.2A) 600V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
|
International Rectifier
|
STGB3NB60SD STGB3NB60SDT4 |
N-CHANNEL 3A - 600V D2PAK Power MESHIGBT N沟道3A 600V的D2PAK封装IGBT的电力网格⑩ Transient Surge Protection Thyristor; Package/Case:6-SOIC; Current, It av:2.2A; Reel Quantity:1500; Capacitance:100pF; Forward Current:5A; Forward Voltage:12V; Holding Current:100uA; Mounting Type:Surface Mount N沟道3A 600V的IGBT的采用D2PAK POWERMESH N-CHANNEL 3A - 600V D2PAK Power MESH IGBT N-CHANNEL 3A - 600V D2PAK POWERMESH IGBT N-CHANNEL 3A - 600V D2PAK Power MESH⑩ IGBT
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ST Microelectronics STMicroelectronics N.V. STMICROELECTRONICS[STMicroelectronics]
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FQI5N60C FQB5N60C FQB5N60CTM |
600V N-Channel MOSFET 4.5 A, 600 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET 600V N-Channel Advance QFET C-Series
|
Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
|
SSW2N60B 2N60B SSI2N60B SSW2N60BTM |
600V N-Channel B-FET / Substitute of SSW2N60A 600V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
FQP8N60C FQPF8N60C |
600V N-Channel Advance Q-FET C-Series 600V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
FQI6N60C FQB6N60C FQB6N60CTM |
600V N-Channel Advance Q-FET C-Series 600V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
FQP2N60C FQPF2N60C |
600V N-Channel Advance Q-FET C-Series 600V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
STGP7NB60FD STGB7NB60FD STGB7NB60FDT4 |
N-CHANNEL 7A 600V TO-220/D2PAK POWERMESH IGBT N-CHANNEL 7A - 600V TO-220 / D2PAK PowerMESH IGBT N沟道A - 600V 220 / D2PAK封装PowerMESHIGBT (STGP7NB60FD / STGB7NB60FD) N-CHANNEL 7A - 600V TO-220 / D2PAK PowerMESH IGBT 14 A, 600 V, N-CHANNEL IGBT, TO-220AB
|
STMICROELECTRONICS[STMicroelectronics] STMicroelectronics N.V. ST Microelectronics
|
IRFBC30AS IRFBC30L IRFBC30AL IRFBC30ASTRL IRFBC30A |
600V Single N-Channel HEXFET Power MOSFET in a D2-Pak package 600V Single N-Channel HEXFET Power MOSFET in a TO-262 package HEXFET? Power MOSFET Power MOSFET(Vdss=600V/ Rds(on)max=2.2ohm/ Id=3.6A) 600V,3.6A,N-Channel HEXFET Power MOSFET for SMPS(600V,3.6A,N沟道 HEXFET 功率MOS场效应管,用于开关模式电 Power MOSFET(Vdss=600V, Rds(on)max=2.2ohm, Id=3.6A) 功率MOSFET(减振钢板基本\u003d 600V电压的Rds(on)最大值\u003d 2.2ohm,身份证\u003d 3.6A
|
IRF[International Rectifier] International Rectifier, Corp.
|
STGB3NB60KD STGB3NB60KDT4 STGD3NB60K STGD3NB60KT4 |
N-CHANNEL 3A - 600V - TO-220/DPAK/D2PAK PowerMESH??IGBT (STGP3NB60K / STGB3NB60K) N-CHANNEL 3A - 600V - TO-220/DPAK/D2PAK PowerMESH IGBT N-CHANNEL 3A - 600V - TO-220/DPAK/D2PAK PowerMESHIGBT N沟道3A 600V IGBT的TO-220/DPAK/D2PAK PowerMESH (STGD3NB60K / STGP3NB60K / STGP3NB60KD / STGB3NB60KD) N-CHANNEL 3A - 600V - TO-220/DPAK/D2PAK PowerMESH IGBT
|
STMicroelectronics N.V. ST Microelectronics
|
STW12NB60 7799 |
12 A, 600 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 CONNECTOR ACCESSORY N-CHANNEL 600V - 0.5ohm - 12A TO-247 PowerMesh⑩II MOSFET From old datasheet system N-CHANNEL 600V 0.5 OHM 12A TO-247 POWERMESH MOSFET N-CHANNEL 600V - 0.5ohm - 12A TO-247 PowerMesh?II MOSFET N-CHANNEL 600V 0.5 OHM 12A TO-247 POWERMESH MOSFET
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意法半导 STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
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HGTG30N60C3D FN4041 |
63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes(63A, 600V, UFS系列 N沟道绝缘栅双极型晶体 63 A, 600 V, N-CHANNEL IGBT, TO-247 From old datasheet system
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Intersil, Corp. INTERSIL[Intersil Corporation]
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