PART |
Description |
Maker |
74VCXH16245 6452 |
LOWVOLTAGE CMOS 16-BIT BUS TRANSCEIVER (3-STATE) From old datasheet system
|
STMicro
|
M66307FP M66307SP M66307E |
From old datasheet system LINE SCAN BUFFER with 16BIT MPU BUS COMPATIBLE LINE SCAN BUFFER with 16-BIT MPU BUS COMPATIBLE INPUTS
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
AK4641EN |
16bit stereo CODEC with built-in Microphone-amplifier and 16bit Mono CODEC for Bluetooth Interface.
|
Asahi Kasei Microsystems
|
74LCX16245A 5422 |
LOWVOLTAGE CMOS 16-BIT BUS TRANSCEIVER (3-STATE)WITH 5V TOLERANT INPUTS AND OUTPUTS From old datasheet system
|
STMicro
|
K4S641632C K4S641632C-TC_L70 K4S641632C-TC_L80 K4S |
64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 125MHz 1M x 16Bit x 4 Banks Synchronous DRAM 64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 166MHz
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
A43L8316AV-5 A43L8316AV-5.5 A43L8316AV-6 A43L8316A |
Cycle time:5ns; 200MHz CL=3 access time:4.5ns 128K x 16bit x 2banks synchronous DRAM Cycle time:5.5ns; 183MHz CL=3 access time:5.0ns 128K x 16bit x 2banks synchronous DRAM Cycle time:6ns; 166MHz CL=3 access time:5.5ns 128K x 16bit x 2banks synchronous DRAM Cycle time:7ns; 143MHz CL=3 access time:6.0ns 128K x 16bit x 2banks synchronous DRAM
|
AMIC Technology
|
MM74HCT541 MM74HCT540 MM74HCT541MTC MM74HCT541N MM |
Bipolar Power T0220 PNP 10A 80V; Package: TO-220 3 LEAD STANDARD; No of Pins: 3; Container: Rail; Qty per Container: 50 Inverting Octal 3-STATE Buffer Octal 3-STATE Buffer Inverting Octal 3-STATE Buffer Octal 3-STATE Buffer From old datasheet system Inverting Octal 3-STATE Buffer • Octal 3-STATE Buffer
|
Fairchild Semiconductor Corporation FAIRCHILD[Fairchild Semiconductor]
|
TB62708N EE08582 |
16BIT SHIFT REGISTER / LATCHES & CONSTANT CURRENT SOURCE DRIVER From old datasheet system 16BIT SHIFT REGISTER, LATCHES & CONSTANT CURRENT SOURCE DRIVERS
|
Toshiba Semiconductor
|
AKD4550-E |
16bit A/D and D/A converter
|
Asahi Kasei Microsystems Co.,Ltd
|
KM416C4000B KM416C4100B KM416C4000BS-6 KM416C4000B |
4M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 8K refresh, 50ns 4M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 8K refresh, 60ns
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
TBS6416B4E TBS6416B4E-7G |
1M x 16Bit x 4 Banks synchronous DRAM
|
List of Unclassifed Manufacturers ETC
|
KM416S8030 KM416S8030T-G_F10 KM416S8030T-G_F8 KM41 |
2M x 16Bit x 4 Banks Synchronous DRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|