| PART |
Description |
Maker |
| IS45SMVM16800H IS42RMVM16800H |
2M x 16Bits x 4Banks Mobile Synchronous DRAM
|
Integrated Silicon Solu...
|
| TCS59SM716AFTL-80 TCS59SM716AFTL-70 TCS59SM716AFTL |
2M×4Banks×16Bits Synchronous DRAM(4M×16位同步动态RAM)
8M×4Banks×4Bits Synchronous DRAM(4M×4位同步动态RAM)
4M×4Banks×8Bits Synchronous DRAM(4M×8位同步动态RAM) 4米4Banks × 8位同步DRAM米8位同步动态RAM）的
8M?4Banks?4Bits Synchronous DRAM(4缁?M?4浣??姝ュ???AM)
SYNCHRONOUS DRAM, PDSO54
|
Toshiba Corporation
Toshiba, Corp.
|
| HY5S6B6DLF-SE HY5S6B6DLF-BE HY5S6B6DSF-BE HY5S6B6D |
4Banks x1M x 16bits Synchronous DRAM 4M X 16 SYNCHRONOUS DRAM, 9 ns, PBGA54
|
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
|
| HY57V281620ALT-6 HY57V281620ALT-7 HY57V281620ALT-8 |
128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 143MHz
128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 125MHz
128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 166MHz
128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 133MHz
128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 100MHz
4 BANKS X 2M X 16BITS SYNCHRONOUS DRAM
|
HYNIX[Hynix Semiconductor]
|
| IS46LR32160C |
4M x 32Bits x 4Banks Mobile DDR SDRAM
|
Integrated Silicon Solu...
|
| IS46LR32400F |
1M x 32Bits x 4Banks Mobile DDR SDRAM
|
Integrated Silicon Solu...
|
| IS46LR32160B |
4M x 32Bits x 4Banks Mobile DDR SDRAM
|
Integrated Silicon Solu...
|
| MF1117V-2 |
From old datasheet system
FOR DIGITAL MOBILE TELEPHONE Rx
FOR DIGITAL MOBILE TELEPHONE, Rx
FOR DIGITAL MOBILE TELEPHONE / Rx
GIGATRUE 550 CAT6 PINK STRANDED BULK 250FT
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| BR93LC46RFJ-W BR93LC46RF-W BR93LC46-W BR93LC46FJ-W |
64×16bits serial EEPROM
64】16bits serial EEPROM
6416bits serial EEPROM
|
ROHM[Rohm]
|
| HYB18L256160B |
DRAMs for Mobile Applications 256-Mbit Mobile-RAM DRAM的针对移动应56兆移动RAM
|
Qimonda AG
|
