| PART |
Description |
Maker |
| IKB20N60H3 |
High speed IGBT in Trench and Fieldstop technology
|
Infineon Technologies A...
|
| IKW30N60H3 |
High speed Duopack : IGBT in Trench and Fieldstop technology
|
Infineon Technologies AG
|
| STGW60H65DFB |
Trench gate field-stop IGBT, HB series 650 V, 60 A high speed
|
ST Microelectronics
|
| STGW40H65DFB |
Trench gate field-stop IGBT, HB series 650 V, 40 A high speed
|
ST Microelectronics
|
| STGW20H65FB |
Trench gate field-stop IGBT, HB series 650 V, 20 A high speed
|
ST Microelectronics
|
| IRG4BC40FPBF |
Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT
|
International Rectifier
|
| IRG4PC60F-P |
600V Fast 1-8 kHz Discrete IGBT in a TO-247AC Solder Plate package
INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT
|
IRF[International Rectifier]
|
| APTGT100A120TG |
Phase leg Fast Trench Field Stop IGBT Power Module 140 A, 1200 V, N-CHANNEL IGBT
|
Advanced Power Technology, Ltd.
MICROSEMI[Microsemi Corporation]
|
| RM400HV-34S |
CAP CER 22000PF 10% 50V X8R 0805
HIGH SPEED SWITCHING USE INSULATED TYPE
Fast Recovery Diode Modules, F Series (for IGBT speed switching)
|
Mitsubishi Electric Sem...
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| STGW20H60DF STGWT20H60DF |
Low thermal resistance
600 V, 20 A high speed trench gate field-stop IGBT
|
STMicroelectronics
ST Microelectronics
|
| APT50GF120B2R APT50GF120LR |
The Fast IGBT is a new generation of high voltage power IGBTs. 该快速IGBT是一种高压IGBT的新一代
Fast IGBT 1200V 80A
|
Advanced Power Technology, Ltd.
ADPOW[Advanced Power Technology]
|
