| PART |
Description |
Maker |
| APTDF200H60G |
FRED 50-1700V
|
Microsemi
|
| APT75DF170HJ |
FRED 50-1700V
|
Microsemi
|
| APT50DF170HJ |
FRED 50-1700V
|
Microsemi
|
| APT30DF100HJ |
FRED 50-1700V
|
Microsemi
|
| APTDF400AK170G |
FRED 50-1700V
|
Microsemi
|
| STC06IE170HV |
Emitter switched bipolar transistor ESBT 1700V - 4A - 0.17?/a>
Emitter switched bipolar transistor ESBT 1700V - 6A - 0.15 Ohm
Emitter switched bipolar transistor ESBT 1700V - 4A - 0.17з
|
http://
ST Microelectronics, Inc.
STMicroelectronics
|
| SIGC68T170R3 |
IGBTs - HV Chips - SIGC68T170R3, 1700V, 50A
|
Infineon
|
| SIDC56D170E6 |
Diodes - HV Chips - SIDC56D170E6, 1700V, 75A
|
Infineon
|
| BYP100 C67047-A2254-A2 BYP300 C67047-A2250-A2 |
From old datasheet system
FRED DIODE (FAST RECOVERY EPITAXIAL DIODE SOFT RECOVERY CHARACTERISTICS)
FRED-FET Diode
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Infineon
|
| ENA1967 |
N-Channel Power MOSFET, 1700V, 3A, 10.5Ohm, TO-3PF-3L
|
ON Semiconductor
|
| STC04IE170HV STC04IE170HV0611 |
Emitter switched bipolar transistor ESBT 1700V - 4A - 0.17
|
STMicroelectronics
|
