| PART |
Description |
Maker |
| HY57V281620HCT-HI HY57V281620HCLT-8I |
SDRAM|4X2MX16|CMOS|TSOP|54PIN|PLASTIC
From old datasheet system
SDRAM,4X2MX16,CMOS,TSOP,54PIN,PLASTIC
|
Hynix Semiconductor
|
| HY57V281620HCT-H HY57V281620HCLT-K |
SDRAM|4X2MX16|CMOS|TSOP|54PIN|PLASTIC
From old datasheet system
SDRAM,4X2MX16,CMOS,TSOP,54PIN,PLASTIC
|
Hynix Semiconductor
|
| TC554161AFT-10 |
SRAM,256KX16,CMOS,TSOP,54PIN,PLASTIC
From old datasheet system
|
Toshiba.
|
| IRS21271SPBF IRS21281SPBF IRS2127SPBF |
Asynchronous SRAM; Organization (word): 256K; Organization (bit): x 16; Memory capacity (bit): 4M; Access time (ns): 12; Supply voltage (V): 4.5 to 5.5; Operating temperature (°C): 0 to 70; Package: TSOPII (44); Status: Remarks:
Asynchronous SRAM; Organization (word): 1M; Organization (bit): x 4; Memory capacity (bit): 4M; Access time (ns): 12; Supply voltage (V): 3.0 to 3.6; Operating temperature (°C): 0 to 70; Package: SOJ (32); Status: Remarks:
|
International Rectifier
|
| K4S560832E-NCL75 K4S561632E-NCL60 K4S561632E-NCL75 |
16M x 16 SDRAM, LVTTL, 133MHz
256Mb E-die SDRAM Specification 54pin sTSOP-II
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K4S560832A K4S560832A-TC_L1H K4S560832A-TC_L1L K4S |
256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL
IC,SDRAM,4X8MX8,CMOS,TSOP,54PIN,PLASTIC
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| KBPC810 KBPC8005 KBPC801 KBPC802 KBPC804 KBPC806 K |
1000V Bridge in a D-72 package
50V Bridge in a D-72 package
100V Bridge in a D-72 package
200V Bridge in a D-72 package
400V Bridge in a D-72 package
600V Bridge in a D-72 package
800V Bridge in a D-72 package
|
International Rectifier
|
| DF005S DF005M DF10S DF01M DF01S DF02M DF02S DF04M |
1000V Bridge in a D-71 package
800V Bridge in a D-71 package
400V Bridge in a D-71 package
200V Bridge in a D-71 package
100V Bridge in a D-71 package
50V Bridge in a D-71 package
600V Bridge in a D-71 package
1A Single Phase D.I.L. Rectifier Bridge (1.0A, from 50 to 1000V)
|
IRF[International Rectifier]
|
| IRKD250-30 IRK320 IRKC250 IRKC250-24 IRKJ250-24 IR |
RES 681-OHM 1% 0.25W 100PPM THICK-FILM SMD-1206 5K/REEL-7IN-PA 磁共甲柏电源模块
2000V Single Diode in a MAGN-A-Pak package 2000V单二极管在磁共振- à - Pak封装
2400V Single Diode in a MAGN-A-Pak package
2400V Doubler in a MAGN-A-Pak package
2000V Doubler in a MAGN-A-Pak package
1600V Single Diode in a MAGN-A-Pak package
1600V Doubler in a MAGN-A-Pak package
3000V Common Anode in a MAGN-A-Pak package
2400V Common Anode in a MAGN-A-Pak package
2000V Common Anode in a MAGN-A-Pak package
1600V Common Anode in a MAGN-A-Pak package
800V Common Anode in a MAGN-A-Pak package
800V Single Diode in a MAGN-A-Pak package
800V Doubler in a MAGN-A-Pak package
3000V Common Cathode in a MAGN-A-Pak package
2400V Common Cathode in a MAGN-A-Pak package
2000V Common Cathode in a MAGN-A-Pak package
1600V Common Cathode in a MAGN-A-Pak package
800V Common Cathode in a MAGN-A-Pak package
1200V Common Anode in a MAGN-A-Pak package
1200V Single Diode in a MAGN-A-Pak package
1200V Doubler in a MAGN-A-Pak package
1200V Common Cathode in a MAGN-A-Pak package
MAGN-A-pak Power Modules
STANDARD RECOVERY DIODES 标准恢复二极
|
IRF[International Rectifier]
RECOM Electronic GmbH
International Rectifier, Corp.
|
| 50RIA40M 50RIA40S90 50RIA120 50RIA80S90M 50RIA 50R |
100V 50A Phase Control SCR in a TO-208AC (TO-65) package
800V 50A Phase Control SCR in a TO-208AC (TO-65) package
1000V 50A Phase Control SCR in a TO-208AC (TO-65) package
400V 50A Phase Control SCR in a TO-208AC (TO-65) package
1600V 80A Phase Control SCR in a TO-208AC (TO-65) package
1200V 50A Phase Control SCR in a TO-208AC (TO-65) package
1400V 80A Phase Control SCR in a TO-208AC (TO-65) package
600V 50A Phase Control SCR in a TO-208AC (TO-65) package
MEDIUM POWER THYRISTORS
Silicon Controlled Rectifier, 80 A, 1600 V, SCR, TO-208AC, TO-65, 2 PIN
|
IRF[International Rectifier]
Vishay Semiconductors
|
| M25PE80-VMN6P |
2A Standard Fixed Output LDO Regulators with Shutdown Switch; Package: TO220FP-5; Constitution materials list: Packing style: Tube packaging; Package quantity: 50; Minimum package quantity: 500; 8兆位，低电压，页式可擦除的字节变性，50MHz的SPI总线，标准引脚串行闪
|
STMicroelectronics N.V.
|
| IRKD166 IRKC166 IRKC196-04 IRKC196-08 IRKC196-12 I |
1400V Single Diode in a INT-A-Pak package
1200V Single Diode in a INT-A-Pak package
1200V Doubler in a INT-A-Pak package
1600V Common Anode in a INT-A-Pak package
1600V Single Diode in a INT-A-Pak package
1600V Doubler in a INT-A-Pak package
1600V Common Cathode in a INT-A-Pak package
STANDARD RECOVERY DIODES
800V Doubler in a INT-A-Pak package
800V Single Diode in a INT-A-Pak package
1200V Common Anode in a INT-A-Pak package
800V Common Cathode in a INT-A-Pak package
1400V Doubler in a INT-A-Pak package
1400V Common Anode in a INT-A-Pak package 1400V共阳极的相依 Pak封装
1400V Common Cathode in a INT-A-Pak package 1400V共阴极的相依 Pak封装
NEW INT-A-pak Power Modules 新国甲柏电源模块
1200V Common Cathode in a INT-A-Pak package 1200伏共阴极的相依甲- Pak封装
800V Common Anode in a INT-A-Pak package 800V的共阳极的相依甲- Pak封装
230 A, 1200 V, SILICON, RECTIFIER DIODE
|
IRF[International Rectifier]
International Rectifier, Corp.
VISHAY SEMICONDUCTORS
|
