| PART |
Description |
Maker |
| AT25F1024A AT25F1024AN-10SU-2.7 AT25F1024AY4-10YU- |
Byte Mode and 256-byte Page Mode for Program Operations
1Mbit High Speed SPI Serial Flash Memory 1M (131,072 x 8)
|
ATMEL Corporation
|
| AT25F512Y4-10YU-2.7 AT25F512N-10SU-2.7 AT25F51204 |
SPI Serial Memory 64K X 8 FLASH 2.7V PROM, PDSO8
SPI Serial Memory 64K X 8 FLASH 2.7V PROM, DSO8
Byte Mode and 256-byte Page Mode for Program Operations
|
ATMEL Corporation
Atmel, Corp.
|
| LC872H04A LC872H06A LC872H08A |
CMOS IC 8K/6K/4K-byte ROM and 256-byte RAM integrated 8-bit 1-chip Microcontroller
|
Sanyo Semicon Device
|
| OPB992L55 OPB992P15 OPB992N11 OPB992L15 OPB990N51 |
128K SPI SERIAL EEPROM W/ 64-BYTE PAGE, 1.8V, -40C to 85C, 8-SOIC 150mil, TUBE
128K SPI SERIAL EEPROM W/ 64-BYTE PAGE, 1.8V, -40C to 85C, 8-TSSOP, T/R
128K SPI SERIAL EEPROM W/ 64-BYTE PAGE, 1.8V, -40C to 85C, 8-TSSOP, TUBE
128K SPI SERAL EEPROM W/ 64 BYTE PAGE, 1.8V, -40C to 85C, 8-PDIP, TUBE
8K SPI 1K X 8, 16B PAGE, 1.8V SER EE, -40C to 85C, 8-SOIC 150mil, TUBE
2K, 256 X 8, 1.8V SER EE, -40C to 125C, 6-SOT-23, T/R
2K, 256 X 8, 1.8V SER EE, -40C to 125C, 8-TSSOP, T/R
2K, 256 X 8, 1.8V SER EE, -40C to 85C, 8-SOIC 150mil, TUBE
|
TT electronics OPTEK Technology
Central Semiconductor, Corp.
|
| X28HC256P-12 X28HC256P-15 X28HC256J-90 X28HC256S-1 |
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 150 ns, PDSO28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 120 ns, CPGA28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 90 ns, CQCC32
SWITCH SLIDE 2MM HORIZONTAL SMD 32K X 8 EEPROM 5V, 90 ns, CDIP28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 70 ns, CDIP28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 90 ns, CDIP28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 70 ns, PDIP28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 70 ns, PDSO28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 90 ns, PDSO28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 90 ns, PDIP28
RACK DESK SOLID BLACK 1.75X19X8,1 32K X 8 EEPROM 5V, 70 ns, CPGA28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 70 ns, PQCC32
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 70 ns, CPGA28
Continuity Tester RoHS Compliant: NA 32K X 8 EEPROM 5V, 90 ns, PQCC32
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 90 ns, PQCC32
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 90 ns, CDFP28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 70 ns, CQCC32
Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 1000uF; Voltage: 50V; Case Size: 12.5x25 mm; Packaging: Bulk
|
Intersil, Corp.
Intersil Corporation
|
| LC322260J LC322260T-70 LC322260T-80 LC322260J-70 |
2 MEG (131072 words X 16 bits) DRAM Fast Page Mode / Byte Read/Write
CONNECTOR ACCESSORY
2 MEG (131072 words X 16 bits) DRAM Fast Page Mode, Byte Read/Write
2 MEG (131072 words X 16 bits) DRAM Fast Page Mode Byte Read/Write
|
Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
|
| MSM511664C-60TS-K MSM511664C-70JS MSM511664C-80JS |
65,536-Word X 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE (BYTE WRITE)
|
OKI electronic componets
|
| MSM511664C |
65536-Word X 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE (BYTE WRITE)
|
OKI electronic componets
|
| NAND128W3A2BN6 NAND01BGR3A NAND01BGR3A0AN1T NAND01 |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
|
STMICROELECTRONICS[STMicroelectronics]
|
| SLE4442M2.2 SLE4442C SLE4442 SLE4432 SLE4432M2.2 S |
ICS FOR CHIP CARDS INTELLIGENT 256-BYTE EEPROM
From old datasheet system
(SLE4432 / SLE4442) 256 Byte EEPROM
Intelligent 256Bit EEPROM
SERIAL EEPROM,256X8,MOS,WAFER,PLASTIC
SERIAL EEPROM,256X8,MOS,MODULE,8PIN,PLASTIC
|
SIEMENS[Siemens Semiconductor Group]
Infineon Technologies AG
|
| MSM511666CL-XXTS-K MSM511666C-XXTS-K MSM511666CL-7 |
65,536-Word X 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO (BYTE WRITE) 65,536字16位动态随机存储器：快速页面模式型江户（字节写
|
OKI SEMICONDUCTOR CO., LTD.
|
|
