| PART |
Description |
Maker |
| CGH40025F |
25 W, RF Power GaN HEMT
|
CREE[Cree, Inc]
|
| CG2H40010 CG2H40010F CG2H40010P |
10 W, DC - 6 GHz, RF Power GaN HEMT
|
Cree, Inc
|
| TGI8596-50 |
MICROWAVE POWER GaN HEMT
|
Toshiba Semiconductor
|
| TGI1314-50L |
MICROWAVE POWER GaN HEMT
|
Toshiba Semiconductor
|
| CLF1G0035-100P CLF1G0035S-100P |
Broadband RF power GaN HEMT
|
NXP Semiconductors
|
| CFG40006S-AMP1 |
6 W, RF Power GaN HEMT, Plastic
|
Cree, Inc
|
| CGHV59070F-TB |
70 W, 4.4-5.9 GHz, 50 V, RF Power GaN HEMT
|
Cree, Inc
|
| TGA2576-FL-15 |
2.5 to 6 GHz GaN HEMT Power Amplifier
|
TriQuint Semiconductor
|
| TGF2952 TGF2952-15 |
7 Watt Discrete Power GaN on SiC HEMT
|
TriQuint Semiconductor
|
| MAGX-000035-030000 MAGX-000035-SB1PPR MAGX-000035- |
GaN HEMT Power Transistor 30W CW, 30 MHz - 3.5 GHz
|
M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solution...
M/A-COM Technology Solu...
|
| MGF0840G |
High-power GaN HEMT (small signal gain stage)
|
Mitsubishi Electric Semiconductor
|
| MAGX-002731-SB1PPR MAGX-002731-030L00 |
GaN HEMT Pulsed Power Transistor 2.7 - 3.1 GHz, 30W Peak, 500us Pulse, 10% Duty Cycle
|
M/A-COM Technology Solutions, Inc.
|
