| PART |
Description |
Maker |
| 10-FY074PA050SM-M582F38 |
650V IGBT H5 and 650V Stealth Si diode
|
Vincotech
|
| FGA50N100BNTDTU |
1000V, 50A NPT-Trench IGBT CO-PAK; Package: TO-3P; No of Pins: 3; Container: Rail 50 A, 1000 V, N-CHANNEL IGBT
|
Fairchild Semiconductor, Corp.
|
| MBF15T65PEH |
650V Field Stop IGBT
|
MagnaChip Semiconductor...
|
| RGTH80TK65D |
650V 40A Field Stop Trench IGBT
|
ROHM
|
| FGH30T65UPDT |
650V, 30A Field Stop Trench IGBT
|
Fairchild Semiconductor
|
| RGTVX6TS65 |
650V 80A Field Stop Trench IGBT
|
Rohm
|
| IGZ75N65H5 |
650V IGBT high speed series fifth generation
|
Infineon Technologies A...
|
| IGZ100N65H5 |
650V IGBT high speed series fifth generation
|
Infineon Technologies A...
|
| STGY40NC60VD STGY40NC60V |
N-CHANNEL 50A - 600V MAX247 VERY FAST POWERMESH" IGBT
N-CHANNEL 50A - 600V - Max247 Very Fast PowerMESH IGBT
Niobium Oxide Capacitor; Capacitor Type:Solid; Voltage Rating:6.3VDC; Capacitor Dielectric Material:Niobium Oxide; Capacitance:220uF; Capacitance
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
|
