| PART |
Description |
Maker |
| C1206C105K3NACTU |
Ceramic, 150C-(CxxxxC), 1 uF, 10%, 25 V, 1206, X8L, SMD, MLCC, High Temperature, Temperature Stable
|
Kemet Corporation
|
| HEDS-5120-A13 HEDT-9100 HEDS-5120-A14 HEDT-9101-I0 |
HEDT-9101#A00 · High Temperature 125 degrees C Two Channel Optical Incremental Encoder Modules
HEDT-9100#A00 · High Temperature 125 degrees C Two Channel Optical Incremental Encoder Modules
HEDT-9001#A00 · High Temperature 125 degrees C Two Channel Optical Incremental Encoder Modules
HIGH TEMPERATURE 125 DEGREE CELCIOUS TWO CHANNEL OPTICAL INCREMENTAL ENCODER MODULES
ANALOG Replaced PQ025EH02ZPH
High Temperature 125 degrees C Two Channel Optical Incremental Encoder Modules 高温125℃双通道光学增量编码器模
SINGLE, 2 CHANNELS, ROTARY OPTICAL POSITION ENCODER
|
Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
Avago Technologies, Ltd.
|
| T1010H-6G T1010H-6G-TR T1010H-6T T1010H-6T-TR T101 |
High-temperature 10A sensitive gate Triacs
High temperature 10 A sensitive TRIACs
600 V, 10 A, TRIAC, TO-220AB
|
ST Microelectronics
STMicroelectronics
|
| 125293U020AJ1B 125114U005AJ1B 125114U6R3AC1B 12523 |
The Pace-Setter for Long Life and High Temperature
Type 125 -55 篓卢C to 125 篓卢C, Ultra-High Temperature, Military Grade
Type 125 -55 潞C to 125 潞C, Ultra-High Temperature, Military Grade
Type 125 -55 oC to 125 oC, Ultra-High Temperature, Military Grade
Type 125 -55 ìC to 125 ìC, Ultra-High Temperature, Military Grade
|
Cornell Dubilier Electr...
List of Unclassifed Man...
ETC
List of Unclassifed Manufacturers
http://
Cornell Dubilier Electronics
|
| SM6HT24A SM6HT27A SM6HT36A SM6HT43A 6565 SM6HTXXA |
From old datasheet system
HIGH TEMPERATURE TRANSIL FOR AUTOMOTIVE APPLICATIONS
HIGH TEMPERATURE TRANSILTM FOR AUTOMOTIVE APPLICATIONS
|
STMICROELECTRONICS[STMicroelectronics]
|
| SIP-1987HT-01-1001FC SIP-1987HT-01-1001FD SIP-1987 |
TaNFilm垄莽 High Temperature DIP and SIP Networks
TaNFilm庐 High Temperature DIP and SIP Networks
TaNFilm? High Temperature DIP and SIP Networks
|
IRC - a TT electronics Company.
|
| SB5H100-E3_54 SB5H100-E3_73 SB5H100-E3/54 SB5H100H |
High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance
|
Vishay Siliconix
|
| EL2223 EL2223C EL2223J EL2223CJ EL2223L/883B EL222 |
12-Bit, 3.3V, 130MSPS, CommLinkTM High Speed D/A Converter (TSSOP); Temperature Range: -40°C to 85°C; Package: 28-SOIC
Laser Diode Driver with Waveform Generator; Temperature Range: 0°C to 70°C; Package: 28-QFN T&R
12-Bit, 3.3V, 130MSPS, CommLinkTM High Speed D/A Converter (TSSOP); Temperature Range: -40°C to 85°C; Package: 28-TSSOP
High Speed Operational Amplifier
Dual, 500 MHz High Speed, Operational Amplifier
|
Elantec Semiconductor
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| NRT335M06 NRA155M25 NRB474K25 NRC473K16 NRC473K20 |
High-Temperature Durability 高温耐久
R Series Chip
High-Temperature Durability
|
Electronic Theatre Controls, Inc.
ETC
List of Unclassifed Manufacturers
http://
NEC
List of Unclassifed Man...
|
| SS2PH9-E3_84A SS2PH9-E3_85A SS2PH9HE3_84A SS2PH9HE |
High-Voltage Surface Mount Schottky Barrier Rectifiers High Barrier Technology for Improved High Temperature Performance
|
Vishay Siliconix
|
| AM26LS32DCB AM26LS32JCTR AM26LS32/BEA AM26LS33/B2C |
Micropower Precision Shunt Voltage Reference; Package: SO; No of Pins: 8; Temperature Range: 0°C to 70°C
Wide Input Range, High Efficiency, Step-Down Switching Regulator; Package: PDIP; No of Pins: 8; Temperature Range: 0°C to 70°C
Low Noise, Rail-to-Rail Precision Op Amp; Package: PDIP; No of Pins: 8; Temperature Range: 0°C to 70°C
1.1MHz, 0.4V/us Over-The-Top Micropower, Rail-To-Rail Input and Output Op Amp; Package: SO; No of Pins: 8; Temperature Range: -40°C to 85°C
1.1MHz, 0.4V/us Over-The-Top Micropower, Rail-To-Rail Input and Output Op Amp; Package: PDIP; No of Pins: 8; Temperature Range: 0°C to 70°C
Positive High Voltage Hot Swap Controllers; Package: SO; No of Pins: 8; Temperature Range: -40°C to 85°C
Line Receiver 线路接收
|
接收
Advanced Micro Devices, Inc.
|
