| PART |
Description |
Maker |
| TSM2N7002KCX |
Discrete Devices-MOSFET-Single N-Channel
|
Taiwan Semiconductor
|
| RS1GL |
Discrete Devices -Diode-Fast Recovery
|
Taiwan Semiconductor
|
| 1N5397S 1N5392S |
Discrete Devices -Diode-Standard Rectifier
|
Taiwan Semiconductor
|
| 2CZ4005 |
Discrete Devices-Diode-Standard Rectifier
|
Taiwan Semiconductor
|
| ESH1GM ESH1DM |
Discrete Devices -Diode-Ultra Fast Rectifier
|
Taiwan Semiconductor
|
| UG6005PT |
Discrete Devices -Diode-Ultra Fast Rectifier
|
Taiwan Semiconductor
|
| ESH2B |
Discrete Devices -Diode-Ultra Fast Rectifier
|
Taiwan Semiconductor
|
| DESDA5V3L DESDA5V3L-7 |
Discrete - Protection Devices - Zener TVSs
DUAL SURFACE MOUNT TVS ARRAY
|
Diodes Incorporated
|
| 30BF..SERIES 30BF80 30BF10 30BF20 30BF40 30BF60 30 |
DIODE 3 A, SILICON, RECTIFIER DIODE, DO-214AB, Rectifier Diode
SURFACE MOUNTABLE ULTRAFAST RECOVERY DIODE 表面贴装超快恢复二极
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
800V 3A Ultra-Fast Discrete Diode in a SMC package
400V 3A Ultra-Fast Discrete Diode in a SMC package
600V 3A Ultra-Fast Discrete Diode in a SMC package
100V 3A Ultra-Fast Discrete Diode in a SMC package
200V 3A Ultra-Fast Discrete Diode in a SMC package
|
International Rectifier, Corp.
IRF[International Rectifier]
VISHAY SEMICONDUCTORS
|
| OM5236ST OM5241ST OM5240ST OM5238ST OM5237ST OM523 |
400V 10A Hi-Rel Ultra-Fast Discrete Diode in a TO-257AA package
400V 10A Hi-Rel Ultra-Fast Discrete Diode in a D2 package
150V 10A Hi-Rel Ultra-Fast Discrete Diode in a TO-257AA package
150V 10A Hi-Rel Ultra-Fast Discrete Diode in a D2 package
100V 10A Hi-Rel Ultra-Fast Discrete Diode in a D2 package
SINGLE ISOLATED RECTIFIER IN HERMETIC
200V 10A Hi-Rel Ultra-Fast Discrete Diode in a D2 package
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
|
International Rectifier
List of Unclassifed Manufacturers
ETC[ETC]
|
| IXFN26N90 IXFN25N90 IXFN-26N90 IXFN-25N90 |
Discrete MOSFETs: HiPerFET Power MOSFETS
HiPerFETTM Power MOSFETs Single Die MOSFET
HiPerFET Power MOSFETs Single Die MOSFET 25 A, 900 V, 0.33 ohm, N-CHANNEL, Si, POWER, MOSFET
|
http://
IXYS[IXYS Corporation]
IXYS, Corp.
|
| BZT52B9V1-G BZT52B8V2-G BZT52B6V8-G BZT52B33-G BZT |
Discrete Devices-Diode-Zener Diode & Array
|
Taiwan Semiconductor
|
