| PART |
Description |
Maker |
| XTSC0201-10NF |
Extreme Temperature Silicon Capacitor
|
Micross Components
|
| XTSC0603-100NF |
Extreme Temperature Silicon Capacitor
|
Micross Components
|
| XTSC0402-47NF |
Extreme Temperature Silicon Capacitor
|
Micross Components
|
| XTSC0201-10NF-30V |
Extreme Temperature Silicon Capacitor
|
Micross Components
|
| XTSC0402-10NF |
Extreme Temperature Silicon Capacitor
|
Micross Components
|
| BCR400R Q62702-C2479 |
From old datasheet system
Active Bias Controller (Supplies stable bias current even at low battery voltage and extreme ambient temperature variation)
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| TG1.8.682J TM1.4.332JNBSP TM1.4.332J RTH22ES682J T |
Positive - Temperature - Coefficient Silicon Thermistors
From old datasheet system
SENSISTORS SILICON THERMISTORS
Multiconductor UTP Data Cable; Number of Conductors:8; Conductor Size AWG:24; No. Strands x Strand Size:Solid; Jacket Material:Polyvinylchloride (PVC); Number of Pairs:4 RoHS Compliant: Yes 硅热敏电
POSITIVE TEMPERATURE COEFFICIENT SILICON THERMISTORS 硅正温度系数热敏电阻
|
List of Unclassifed Manufacturers
MICROSEMI[Microsemi Corporation]
ETC[ETC]
Electronic Theatre Controls, Inc.
Microsemi, Corp.
|
| BAT60A |
Schottky Diodes - Silicon AF Schottky rectifier diode with extreme low V_F drop
|
Infineon
|
| MPXH6300A MPXH6300A6T1 MPXH6300AC6T1 MPXH6300AC6U |
High Temperature Accuracy Integrated Silicon Pressure Sensor
HIGH TEMPERATURE ACCURACY INTEGRATED SILICON PRESSURE SENSOR ABSOLUTE, PEIZORESISTIVE PRESSURE SENSOR, 2.9-44.09Psi, 1.5%, 0.30-4.91V, SQUARE, SURFACE MOUNT
|
MOTOROLA[Motorola, Inc]
Motorola Mobility Holdings, Inc.
|
| ASM121Q3 ASM121 |
SIMISTOR TEMPERATURE SENSOR ULTRA-LOW-POWER SILICON THERMISTOR
SIMISTOR⑩ TEMPERATURE SENSOR ULTRA-LOW-POWER SILICON THERMISTOR
|
List of Unclassifed Manufacturers
ETC[ETC]
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
