| PART |
Description |
Maker |
| EMIF10-COM01 |
EMI滤波器包括静电放电保
±15kV ESD Protected, 3.3V, Full Fail-safe, Low Power, High Speed or Slew Rate Limited, RS-485/RS-422 Transceivers; Temperature Range: -40°C to 85°C; Package: 8-MSOP
EMI FILTER INCLUDING ESD PROTECTION
EMI FILTER INCLUDING ESD PROTECTION
|
STMicroelectronics
ST Microelectronics
|
| NTK3142PT5G NTK3142PT1G NTK3142P |
Small Signal Power MOSFET -20 V, -280 mA, P-Channel with ESD Protection, SOT-723
Small Signal MOSFET ?0 V, ?80 mA, P?Channel with ESD Protection, SOT?23
|
Rectron Semiconductor
|
| NTK3043N NTK3043NT1G NTK3043NT5G |
Power MOSFET 20 V, 285 mA, N-Channel with ESD Protection, SOT-723; Package: SOT-723 3 LEAD; No of Pins: 3; Container: Tape and Reel; Qty per Container: 8000 210 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
Power MOSFET 20 V, 285 mA, N−Channel with ESD Protection, SOT−723
|
ON Semiconductor
|
| NTS4409NT1G |
Small Signal MOSFET 25 V, .75 A, Single N-Channel, ESD Protection, SC-70/SOT-323; Package: SC-70 (SOT-323) 3 LEAD; No of Pins: 3; Container: Tape and Reel; Qty per Container: 3000 700 mA, 25 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
ON Semiconductor
|
| 2N7002K |
N-Ch Small Signal MOSFET with ESD Protection
|
SeCoS Halbleitertechnologie GmbH
|
| NUF6001MU NUF6001MUT2G |
6 Line EMI Filter with ESD Protection(6绾垮甫ESD淇??EMI婊ゆ尝??
6 Line EMI Filter with ESD Protection in UDFN Package
|
ON Semiconductor
|
| DF3A3.6FU |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 13.84 to 15.52; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD).
|
Toshiba Corporation
Toshiba Semiconductor
|
| DF2S8.2S |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 12.08 to 12.60; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD).
|
Toshiba Corporation
Toshiba Semiconductor
|
| DF3A8.2FU |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 2.50 to 2.90; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD)
|
Toshiba Corporation
Toshiba Semiconductor
|
| DF5A3.6CFU |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 20.21 to 21.08; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD)
|
Toshiba Corporation
Toshiba Semiconductor
|
| DF3A5.6LFV |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 15.85 to 16.51; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD).
|
Toshiba Corporation
Toshiba Semiconductor
|
| ESDA6V1-5P6 DSDA6V1-5P6 |
TRANSIL ARRAY FOR ESD PROTECTION
TRANSIL⑩ ARRAY FOR ESD PROTECTION
TRANSIL ARRAY FOR ESD PROTECTION
TRANSILARRAY FOR ESD PROTECTION
SUPPORT
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
|
