PART |
Description |
Maker |
HM62W4100HJP/HLJP |
High-Speed SRAMs
|
Hitachi Semiconductor
|
HM6216255HJPI HM6216255HTTI |
High-Speed SRAMs
|
Hitachi Semiconductor
|
CXK77B1841AGB CXK77B3641AGB |
4Mb Late Write LVTTL High Speed Synchronous SRAMs (128K x 36 or 256K x 18 Organization) From old datasheet system
|
Sony
|
CXK79M36C162GB-5 |
18Mb 1x2Lp HSTL High Speed Synchronous SRAMs (512Kb x 36) 35.7 1x2Lp HSTL高速(512KB的36同步静态存储器
|
Sony, Corp.
|
ACT-F1288N ACT-F1288N-150P7T ACT-F1288N-150P7Q ACT |
High speed 1 Megabit monolithic FLASH. Speed 150ns. High speed 1 Megabit monolithic FLASH. Speed 90ns. High speed 1 Megabit monolithic FLASH. Speed 70ns. ACT-F128K8 High Speed 1 Megabit Monolithic FLASH High speed 1 Megabit monolithic FLASH. Speed 60ns. High speed 1 Megabit monolithic FLASH. Speed 120ns.
|
AEROFLEX[Aeroflex Circuit Technology]
|
CXK77B1841AGB CXK77B3641AGB |
4Mb Late Write LVTTL High Speed Synchronous SRAM (128K x 36Bit)(4M位、写延迟LVTTL高速同步静态RAM (128K x 36) 4Mb的后写入LVTTL高速同步SRAM28K的x 36Bit)(4分位,写延迟LVTTL高速同步静态随机存储器28K的36位) 4Mb Late Write LVTTL High Speed Synchronous SRAMs (128K x 36Bit)(4M位、写延迟、高速逻辑收发(HSTL)、高速同步静态RAM (128K x 36) 4Mb的后写入LVTTL高速(128K的x 36Bit)(4分位,写延迟,高速逻辑收发(HSTL),高速同步静态随机存储器28K的36位)同步静态存储器
|
Sony, Corp.
|
IDT71V65703 IDT71V65903 IDT71V65703S85PF IDT71V657 |
3.3V 256K x 36 ZBT Synchronous 3.3V I/O Flowthrough SRAM 256K x 36 512K x 18 3.3V Synchronous ZBT SRAMs 256K x 36, 512K x 18 3.3V Synchronous ZBT? SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs 256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 512K X 18 ZBT SRAM, 7.5 ns, PBGA165 256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 512K X 18 ZBT SRAM, 8 ns, PQFP100 256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 512K X 18 ZBT SRAM, 7.5 ns, PBGA119 256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 256K × 3612K采样× 18 3.3同步ZBT SRAM 256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 512K X 18 ZBT SRAM, 8.5 ns, PBGA165 256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 512K X 18 ZBT SRAM, 7.5 ns, PQFP100 256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 512K X 18 ZBT SRAM, 8.5 ns, PBGA119 256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 256K X 36 ZBT SRAM, 7.5 ns, PQFP100 256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 256K X 36 ZBT SRAM, 7.5 ns, PBGA165
|
IDT[Integrated Device Technology] Integrated Device Technology, Inc.
|
GS88236BD-333I GS88218 GS88218BB-150 GS88218BB-150 |
9Mb Burst SRAMs 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
|
GSI[GSI Technology]
|
AT28HC256-12FM/883 AT28HC256-12LM/883 AT28HC256-12 |
CONNECTOR ACCESSORY 32K X 8 EEPROM 5V, 90 ns, CPGA28 High Speed CMOS Logic 8-Stage Shift-and-Store Bus Register with 3-Stage Outputs 16-TSSOP -55 to 125 256 32K x 8 High Speed Parallel EEPROMs 256 32K x 8 High Speed CMOS E2PROM
|
Atmel, Corp. Atmel Corp. ATMEL Corporation
|
SH0R3D42 |
HIGH SPEED THYRISTOR SILICON PLANAR TYPE HIGH SPEED SWITCHING AND CONTROL APPLICATIONS
|
TOSHIBA[Toshiba Semiconductor]
|
BC858C Q62702-C1773 Q62702-C1774 BC856-BC860 Q6270 |
From old datasheet system PNP Silicon AF Transistors (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage) High Speed CMOS Logic 4-Bit by 16-Word FIFO Register 16-SOIC -55 to 125 High Speed CMOS Logic Octal D-Type Flip-Flop with Reset 20-PDIP -55 to 125 High Speed CMOS Logic 7-Stage Binary Ripple Counter 14-PDIP -55 to 125
|
Siemens Semiconductor G... SIEMENS[Siemens Semiconductor Group] Infineon SIEMENS AG SIEMENS A G
|
TPC8013-H |
Field Effect Transistor Silicon N Channel MOS Type (High speed U-MOS III) High Speed and High Efficiency DC-DC Converters Notebook PC Applications Portable Equipment Applications
|
Toshiba Semiconductor
|