PART |
Description |
Maker |
IPB60R120P7 |
600V CoolMOSa P7 Power Transistor
|
Infineon Technologies A...
|
IPA60R120P7 |
600V CoolMOSa P7 Power Transistor
|
Infineon Technologies A...
|
IPA60R280P7S |
600V CoolMOSa P7 Power Transistor
|
Infineon Technologies A...
|
IPB60R080P7 |
600V CoolMOSa P7 Power Transistor
|
Infineon Technologies A...
|
IPD60R1K0CE |
600V CoolMOSa CE Power Transistor
|
Infineon Technologies A...
|
IPD60R280P7 |
600V CoolMOSa P7 Power Transistor
|
Infineon Technologies A...
|
IPP60R080P7 |
600V CoolMOSa P7 Power Transistor
|
Infineon Technologies A...
|
IPP60R060P7 |
600V CoolMOSa P7 Power Transistor
|
Infineon Technologies A...
|
IPW60R037P7 |
600V CoolMOSa P7 Power Transistor
|
Infineon Technologies A...
|
BC847BS09 |
NPN GENERAL PURPOSE DUAL TRANSIS
|
Pan Jit International Inc.
|
IRFBC30AS IRFBC30L IRFBC30AL IRFBC30ASTRL IRFBC30A |
600V Single N-Channel HEXFET Power MOSFET in a D2-Pak package 600V Single N-Channel HEXFET Power MOSFET in a TO-262 package HEXFET? Power MOSFET Power MOSFET(Vdss=600V/ Rds(on)max=2.2ohm/ Id=3.6A) 600V,3.6A,N-Channel HEXFET Power MOSFET for SMPS(600V,3.6A,N沟道 HEXFET 功率MOS场效应管,用于开关模式电 Power MOSFET(Vdss=600V, Rds(on)max=2.2ohm, Id=3.6A) 功率MOSFET(减振钢板基本\u003d 600V电压的Rds(on)最大值\u003d 2.2ohm,身份证\u003d 3.6A
|
IRF[International Rectifier] International Rectifier, Corp.
|
IPD70R600P7S |
700V CoolMOSa P7 Power Transistor
|
Infineon Technologies A...
|