| PART |
Description |
Maker |
| PTFB090901FAV2R0 PTFB090901FAV2R250XTMA1 PTFB09090 |
Thermally-Enhanced High Power RF LDMOS FETs
|
Infineon Technologies A...
|
| PTFB210801FAV1R0XTMA1 PTFB210801FAV1R250 PTFB21080 |
Thermally-Enhanced High Power RF LDMOS FET
|
Infineon Technologies A...
|
| PTFA080551E PTFA080551F |
Thermally-Enhanced High Power RF LDMOS FETs 55 W, 869 鈥?960 MHz
|
Infineon Technologies AG
|
| PTFA190451E PTFA190451F |
Thermally-Enhanced High Power RF LDMOS FETs 45 W, 1930 - 1990 MHz
|
Infineon Technologies AG
|
| PTF140451E PTF140451F |
Thermally-Enhanced High Power RF LDMOS FETs 45 W, 1450 - 1550 MHz
|
Infineon Technologies AG
|
| PTFA210301E |
Thermally-Enhanced High Power RF LDMOS FET 30 W, 2110-2170 MHz
|
Infineon Technologies AG
|
| PTFA210701E PTFA210701F |
Thermally-Enhanced High Power RF LDMOS FET 70 W, 2110 鈥?2170 MHz
|
Infineon Technologies AG
|
| PTFA192001F PTFA192001E |
Thermally-Enhanced High Power RF LDMOS FETs 200 W, 1930-1990 MHz
|
Infineon Technologies AG
|
| PTVA084007NF |
Thermally-Enhanced High Power RF LDMOS FET 370 W, 48 V, 755 ?805 MHz
|
Cree, Inc
|
| PTF081301E PTF081301F |
Thermally-Enhanced High Power RF LDMOS FETs 130 W, 869 - 960 MHz
|
Infineon Technologies AG
|
| PTFB091802FCV1R0 |
Thermally-Enhanced High Power RF LDMOS FET 180 W, 28 V, 920 ?960 MHz
|
Infineon Technologies A...
|
| PTFA082201E09 PTFA082201F |
Thermally-Enhanced High Power RF LDMOS FETs 220 W, 869 ??894 MHz
Thermally-Enhanced High Power RF LDMOS FETs 220 W, 869 ?894 MHz
|
Infineon Technologies AG
|
