| PART |
Description |
Maker |
| APTDF60H1201G |
FRED 50-1700V
|
Microsemi
|
| APTDF200H120G |
FRED 50-1700V
|
Microsemi
|
| APT30DF20HJ |
FRED 50-1700V
|
Microsemi
|
| STC03DE170HV07 STC03DE170HV |
Hybrid emitter switched bipolar transistor ESBT 1700V - 3A - 0.33 }
Hybrid emitter switched bipolar transistor ESBT㈢ 1700V - 3A - 0.33 W
Hybrid emitter switched bipolar transistor ESBT庐 1700V - 3A - 0.33 W
Hybrid emitter switched bipolar transistor ESBT? 1700V - 3A - 0.33 W
|
ST Microelectronics
STMicroelectronics
|
| STC06IE170HV |
Emitter switched bipolar transistor ESBT 1700V - 4A - 0.17?/a>
Emitter switched bipolar transistor ESBT 1700V - 6A - 0.15 Ohm
Emitter switched bipolar transistor ESBT 1700V - 4A - 0.17з
|
http://
ST Microelectronics, Inc.
STMicroelectronics
|
| CM50TU-34KA |
IGBT Modules:1700V
|
Mitsubishi Electric Corporation
|
| SIGC104T170R2C |
IGBTs - HV Chips - SIGC104T170R2C, 1700V, 50A
|
Infineon
|
| SIGC68T170R3 |
IGBTs - HV Chips - SIGC68T170R3, 1700V, 50A
|
Infineon
|
| BYP300 |
FRED Diode (Fast recovery epitaxial diode Soft recovery characteristics)
From old datasheet system
FRED-FET Diode
|
Siemens Semiconductor G...
Infineon
|
| MIMMG150SR170B |
1700V 150A IGBT Module RoHS Compliant
|
Micross Components
|
| 2MBI650VXA-170E-50 |
IGBT MODULE (V series) 1700V / 650A / 2 in one package
|
Fuji Electric
|
