| PART |
Description |
Maker |
| LTC6253-7 LTC6253HMS-7PBF LTC6253IMS-7PBF |
Dual 2GHz, 3.5mA Gain of 7 Stable Rail-to-Rail I/O Op Amp
|
Linear Technology
|
| BFG193 Q62702-F1291 |
NPN Silicon RF Transistor (For low noise/ high-gain amplifiers up to 2GHz For linear broadband amplifiers)
From old datasheet system
NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers)
|
SIEMENS[Siemens Semiconductor Group]
http://
|
| M48T37YMH M48T37Y-70MH1TR M48T37Y-70MH6 M48T37Y-70 |
TRANS PREBIASED DUAL NPN SOT363
TRANS PREBIASED DUAL COMP SOT363
TRANS PREBIAS DUAL COMP SOT-563
TRANS PREBIASED DUAL PNP SOT-363
DIODE ZENER SINGLE 150mW 3.6Vz 5mA-Izt 0.0556 5uA-Ir 1 SOT-523 3K/REEL
DIODE ZENER DUAL ISOLATED 200mW 3.6Vz 5mA-Izt 0.0556 5uA-Ir 1 SOT-363 3K/REEL
3.3V-5V 256 Kbit 32Kb x8 TIMEKEEPER SRAM 3.3 - 5V56千位2KB的SRAM x8计时
DIODE ZENER SINGLE 300mW 3.6Vz 5mA-Izt 0.0556 5uA-Ir 1 SOT-23 3K/REEL 3.3 - 5V56千位2KB的SRAM x8计时
DIODE ZENER DUAL ISOLATED 200mW 3.3Vz 5mA-Izt 0.0606 5uA-Ir 1 SOT-363 3K/REEL 3.3 - 5V56千位32KB的SRAM x8计时
|
意法半导
ST Microelectronics
STMicroelectronics N.V.
|
| BFP181W Q62702-F1501 |
NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA)
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| BFP181 Q62702-F1271 |
NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA)
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| HM6C5332 |
HM6C5332 - 1.2GHz/250MHz Dual Frequency Synthesizer
|
Hynix Semiconductor Inc.
HYNIX[Hynix Semiconductor]
|
| K4D263238M-QC50 K4D263238M-QC500 K4D263238M-QC45 K |
DIODE ZENER DUAL COMMON-CATHODE 300mW 3Vz 5mA-Izt 0.0667 0.1uA-Ir SOT-23 3K/REEL 100万x 32Bit的4银行双数据速率同步RAM的双向数据选通和DLL
4M X 32 DDR DRAM, 0.7 ns, PQFP100 20 X 14 MM, 0.65 MM PITCH, TQFP-100
DIODE ZENER DUAL COMMON-CATHODE 300mW 39Vz 5mA-Izt 0.0513 0.1uA-Ir 29 SOT-23 3K/REEL 100万x 32Bit的4银行双数据速率同步RAM的双向数据选通和DLL
4M X 32 DDR DRAM, 0.75 ns, PQFP100 20 X 14 MM, 0.65 MM PITCH, TQFP-100
1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL 100万x 32Bit的4银行双数据速率同步RAM的双向数据选通和DLL
DIODE ZENER DUAL COMMON-CATHODE 300mW 3.3Vz 5mA-Izt 0.0606 0.1uA-Ir SOT-23 3K/REEL 100万x 32Bit的4银行双数据速率同步RAM的双向数据选通和DLL
|
Samsung Semiconductor Co., Ltd.
|
| ADP1173AN-12 ADP1173AN-33 ADP1173AR-33 ADP1173 ADP |
Micropower DC-DC Converter
RECTIFIER SCHOTTKY SINGLE 1A 80V 25A-ifsm 0.8V-vf 0.5mA-ir DO-41 5K/AMMO 1.5 A SWITCHING REGULATOR, 32 kHz SWITCHING FREQ-MAX, PDIP8
RECTIFIER SCHOTTKY DUAL 40A 60V 375A-ifsm 0.7V-vf 1mA-ir TO-3P 30/TUBE
RECTIFIER SCHOTTKY SINGLE 1A 90V 25A-ifsm 0.8V-vf 0.5mA-ir DO-41 5K/REEL-13
|
http://
Analog Devices, Inc.
|
| DF25L-36P-0.5H DF25G-20S-0.5F DF25G-20S-0.5F_SD-GN |
DIODE ZENER DUAL COMMON-ANODE 300mW 3.6Vz 5mA-Izt 0.05 0.1uA-Ir SOT-23 3K/REEL
DIODE ZENER DUAL COMMON-ANODE 300mW 3.9Vz 5mA-Izt 0.05 0.1uA-Ir SOT-23 3K/REEL
0.5 mm Contact Pitch, Board-to-FPC, Board-to-Fine Coaxial Ribbon Cable 0.5毫米联系间距，板对软板，板对细同轴电缆线
16 Characters x 1 Lines, 5x7 Dot Matrix Character and Cursor 0.5毫米联系间距，板对软板，板对细同轴电缆线
|
http://
HIROSE[Hirose Electric]
Hirose Electric USA, INC.
HIROSE ELECTRIC Co., Ltd.
|
| AD605-EB AD605ACHIPS AD605AR-REEL AD605AR-REEL7 AD |
Accurate, Low Noise, Dual Channel Linear-In-dB Variable Gain Amplifier, Optimized For Any Application Requiring High Performance
Dual, Low Noise, Single-Supply Variable Gain Amplifier
|
http://
Analog Devices, Inc.
ANALOG DEVICES INC
|
| 15KW160 15KW160A 15KW260 15KW260A 15KW240 15KW240A |
160.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
260.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
240.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
220.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
110.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
200.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
280.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
170.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
180.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
|
MDE Semiconductor
|
| K4H1G0838M-TC/LB0 K4H1G0838M-TC/LA2 K4H1G0838M-TC/ |
DIODE ZENER DUAL COMMON-CATHODE 300mW 43Vz 5mA-Izt 0.0698 0.1uA-Ir 32 SOT-23 3K/REEL
1Gb M-die DDR SDRAM Specification
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
