| PART |
Description |
Maker |
| GS84032AB-180 GS84018AB-180 GS84036AB-180 GS84036A |
256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs 256 × 1828K的3228K的36 4Mb的同步突发静态存储器
256K x 18/ 128K x 32/ 128K x 36 4Mb Sync Burst SRAMs
Time-Delay Relay; Contacts:SPST-NC; Time Range:0.1 - 60 sec.; Mounting Type:Panel; Timing Function:Delay-On-Break; Supply Voltage:12VDC; Time Range Max:60s; Time Range Min:0.1s
|
ETC
Electronic Theatre Controls, Inc.
|
| GS840H18AB-100 GS840H36AB-100I GS840H32AB-180 GS84 |
256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs 256K X 18 CACHE SRAM, 12 ns, PBGA119
256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs 128K X 36 CACHE SRAM, 12 ns, PBGA119
256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs 128K X 32 CACHE SRAM, 8 ns, PBGA119
256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs 256K X 18 CACHE SRAM, 10 ns, PQFP100
256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs 128K X 36 CACHE SRAM, 8 ns, PQFP100
256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs 256K X 18 CACHE SRAM, 10 ns, PBGA119
|
GSI Technology, Inc.
|
| GS840F18AT-10I GS840F18AT-12 GS840F18AT-7.5 GS840F |
256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs
|
GSI[GSI Technology]
|
| GS84032AB-100 GS84032AB-100I GS84032AB-150 GS84032 |
100MHz 12ns 128K x 32 4Mb sync burst SRAM
150MHz 10ns 128K x 32 4Mb sync burst SRAM
166MHz 8.5ns 128K x 32 4Mb sync burst SRAM
|
GSI Technology
|
| MBM29F200BA12 MBM29F200TA12 |
2M (256K×8/128K×16) Bit Flash Memory(V 电源电压256K×8/128K×16闪速存储器) 200万（256K × 8/128K × 16）位快闪记忆体（V的电源电56K × 8/128K × 16闪速存储器
2M (256K?8/128K?16) Bit Flash Memory(??V ?垫??靛?256K?8/128K?16???瀛???ī
|
Fujitsu, Ltd.
Fujitsu Limited
|
| IS61SF12832-10TQ IS61SF12832-10TQI IS61SF12832-8.5 |
x36 Fast Synchronous SRAM 128K X 36 CACHE SRAM, 8 ns, PBGA119
x36 Fast Synchronous SRAM 128K X 36 CACHE SRAM, 8.5 ns, PQFP100
Octal D-Type Transparent Latches With 3-State Outputs 20-SO -40 to 85 128K X 32 CACHE SRAM, 8 ns, PQFP100
x36 Fast Synchronous SRAM 128K X 36 CACHE SRAM, 10 ns, PBGA119
128K x 32, 128K x 36 SYNCHRONOUS FLOW-THROUGH STATIC RAM 128K X 32 CACHE SRAM, 10 ns, PQFP100
x36 Fast Synchronous SRAM 128K X 36 CACHE SRAM, 12 ns, PQFP100
128K x 32, 128K x 36 SYNCHRONOUS FLOW-THROUGH STATIC RAM 128K X 32 CACHE SRAM, 7.5 ns, PQFP100
Octal D-Type Transparent Latches With 3-State Outputs 20-PDIP -40 to 85
|
Integrated Silicon Solution, Inc.
ISSI[Integrated Silicon Solution, Inc]
Integrated Silicon Solution Inc
|
| MT49H8M36 |
288Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II
|
Micron Technology
|
| GS842Z18AB-180I GS842Z18AB-100 GS842Z18AB-100I GS8 |
4Mb Pipelined and Flow Through Synchronous NBT SRAMs 256K X 18 ZBT SRAM, 8 ns, PBGA119
4Mb Pipelined and Flow Through Synchronous NBT SRAMs 256K X 18 ZBT SRAM, 12 ns, PBGA119
4Mb Pipelined and Flow Through Synchronous NBT SRAMs 128K X 36 ZBT SRAM, 8 ns, PBGA119
4Mb Pipelined and Flow Through Synchronous NBT SRAMs 256K X 18 ZBT SRAM, 10 ns, PBGA119
4Mb Pipelined and Flow Through Synchronous NBT SRAMs 256K X 18 ZBT SRAM, 8.5 ns, PBGA119
|
GSI Technology, Inc.
|
| LH532600 LH532600N LH532600D LH532600T LH532600TR |
CMOS 2M(256K X 8/128K X 16) Mask-Programmable ROM
CMOS 2M (256K x 8/128K x 16) MROM
|
SHARP[Sharp Electrionic Components]
Sharp Corporation
|
| IBM0418A8ACLAB IBM0436A4ACLAB |
8Mb( 512K x 18 ) SRAM(8Mb( 512K x 18 )寄存器锁存模式的同步CMOS静态RAM)
4Mb( 128K x 36 ) SRAM(4Mb( 128K x 36 )寄存器锁存模式的同步CMOS静态RAM) 4Mb的（128K的36）的SRAMMb的（128K的36）寄存器锁存模式的同步的CMOS静态RAM）的
|
IBM Microeletronics
International Business Machines, Corp.
|
|
