PART |
Description |
Maker |
VQ1004J VQ1004P 2N6660 |
N-Channel 60-V (D-S) Single and Quad MOSFETs
|
VISAY[Vishay Siliconix]
|
AON4703 |
Single P-Channel MOSFETs (8V - 60V)
|
Alpha & Omega Semiconductor
|
MRF5S9150HR3 MRF5S9150HSR3 |
SINGLE N-CDMA LATERAL N-CHANNEL RF POWER MOSFETs
|
Freescale Semiconductor
|
IXFR180N06 |
HiPerFETTM Power MOSFETs 180 A, 60 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET Discrete MOSFETs: HiPerFET Power MOSFETS
|
IXYS, Corp. IXYS[IXYS Corporation]
|
IRFD123 IRFD120 IRFD122 IRFD121 RFD120 |
(IRFD120 / IRFD121 / IRFD122 / IRFD123) N-Channel Power MOSFETs 1.3A and 1.1A, 80V and 100V, 0.30 and 0.40 Ohm, N-Channel Power MOSFETs 1.3a规范,以.1A的,80V00V.30.40 Ohm的N通道功率MOSFET
|
HARRIS[Harris Corporation] Harris Semiconductor Harris, Corp.
|
2N6660 VQ1004J |
N-Channel 60-V (D-S) Single and Quad MOSFETs N通道60 - V(下局副局长)和Quad MOSFET的单
|
Vishay Intertechnology,Inc. Vishay Intertechnology, Inc.
|
FSPYE234D1 FSPYE234F4 FN4873 FSPYE234R4 FSPYE234F |
From old datasheet system Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 9 A, 250 V, 0.215 ohm, N-CHANNEL, Si, POWER, MOSFET Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs(抗辐N沟道MOS场效应管) 抗辐射,抗SEGR N沟道功率MOSFET(抗辐射沟道马鞍山场效应管)
|
INTERSIL[Intersil Corporation] Intersil, Corp.
|
IXFH32N50Q IXFT32N50Q |
32 A, 500 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD HiPerFET?/a> Power MOSFETs Q-Class HiPerFET⑩ Power MOSFETs Q-Class Discrete MOSFETs: HiPerFET Power MOSFETS
|
IXYS Corporation
|
MGSF3441XT1-D |
Low Rds(on) Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors
|
ON Semiconductor
|
IXFN80N48 |
Discrete MOSFETs: HiPerFET Power MOSFETS HiPerFET Power MOSFETs Single Die MOSFET
|
IXYS Corporation
|