| PART |
Description |
Maker |
| C3D06060G |
6A, 600V, Z-Rec? Schottky, TO-263-2 package
|
Wolfspeed
|
| C4D15120H |
Silicon Carbide Schottky Diode Z-Rec Rectifier
|
Cree, Inc
|
| C4D10120H |
Silicon Carbide Schottky Diode Z-Rec Rectifier
|
Cree, Inc
|
| MBR6080ST MBR60100ST MBR6040ST |
SCHOTTKY BARRIER RECTIFIERS
60 A, 40 V, SILICON, RECTIFIER DIODE, TO-247
|
Pan Jit International Inc.
|
| MBR3045ST MBR3030ST MBR3040ST MBR3080ST MBR30100ST |
SCHOTTKY BARRIER RECTIFIERS
30 A, 80 V, SILICON, RECTIFIER DIODE, TO-247
|
Pan Jit International Inc.
Pan Jit International I...
|
| STW88N65M5 |
N-channel 650 V, 0.024 Ω typ., 84 A, MDmesh V Power MOSFET in TO-247 and TO-247 long leads packages
|
STMicroelectronics
|
| STH7NA90FI STW7NA90FI STW7NA90 5599 |
-频道900V - 1.05ohm - 7A TO-247/ISOWATT218 FAST的功率MOSFET
N沟道900V -1.05Ω- 7A条，TO-247/ISOWATT218快速功率MOSFET（不适用沟道快速功率MOSFET的）
From old datasheet system
N-CHANNEL MOSFET
N - CHANNEL 900V - 1.05OHM - 7A - TO-247/ISOWATT218 FAST POWER MOSFET
N - CHANNEL 900V - 1.05 Ohm - 7A - TO-247/ISOWATT218 FAST POWER MOSFET
|
意法半导
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
SGS Thomson Microelectronics
|
| STC06IE170HV |
Emitter switched bipolar transistor ESBT 1700V - 4A - 0.17?/a>
Emitter switched bipolar transistor ESBT 1700V - 6A - 0.15 Ohm
Emitter switched bipolar transistor ESBT 1700V - 4A - 0.17з
|
http://
ST Microelectronics, Inc.
STMicroelectronics
|
| APT1201R2SFLL APT1201R2BFLL |
12 A, 1200 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 TO-247, 3 PIN
POWER MOS 7 FREDFET
|
ADPOW[Advanced Power Technology]
|
| APTDF200H60G |
FRED 50-1700V
|
Microsemi
|
| APT75DL120HJ |
FRED 50-1700V
|
Microsemi
|
| PH868C12 |
High Voltage Schottky barrier diode 30 A, 120 V, SILICON, RECTIFIER DIODE, TO-247
|
FUJI ELECTRIC CO LTD
Fuji Electric Holdings Co., Ltd.
|
