PART |
Description |
Maker |
T2G6003028-FS-EVB1 T2G6003028-FS-15 T2G6003028-FS- |
30W, 28V DC 6 GHz, GaN RF Power Transistor
|
TriQuint Semiconductor
|
0809LD30 |
Compant High-Insulation Power Relay, Polarized, 10A 30瓦,28V的,1 GHz的LDMOS的场效应 30 Watt / 28V / 1 Ghz LDMOS FET 30 WATT 28V 1 GHz LDMOS FET 30 WATT, 28V, 1 GHz LDMOS FET
|
Electronic Theatre Controls, Inc. GHZ Technology ETC[ETC] List of Unclassifed Manufacturers
|
CGH27060F |
60 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX
|
CREE[Cree, Inc]
|
CGHV27015S-AMP1 CGHV27015S-TR |
15 W, DC - 6.0 GHz, 50 V, GaN HEMT
|
Cree, Inc
|
TGA2624-CP TGA2624-CP-15 |
9 to 10 GHz, 16 W GaN Power Amplifier
|
TriQuint Semiconductor
|
TGA2958 |
13 to 18 GHz 2W GaN Driver Amplifier
|
TriQuint Semiconductor
|
CGHV59070F-TB |
70 W, 4.4-5.9 GHz, 50 V, RF Power GaN HEMT
|
Cree, Inc
|
CG2H40010 CG2H40010F CG2H40010P |
10 W, DC - 6 GHz, RF Power GaN HEMT
|
Cree, Inc
|
CMPA2735075F CMPA2735075F-TB |
75 W, 2.7 - 3.5 GHz, GaN MMIC, Power Amplifier
|
Cree, Inc
|
TGA2576-FL |
2.5 to 6 GHz GaN HEMT Power Amplifier
|
TriQuint Semiconductor
|
CMPA1C1D060D |
60 W, 12.7 - 13.25 GHz, 40 V, GaN MMIC, Power Amplifier
|
Cree, Inc
|
|