| PART |
Description |
Maker |
| NT90TNLBSAC24VSF0.9 NT90TNLADAC12VSB0.6 NT90TNLADA |
Small size, light weight. Low coil power consumption, heavy contact load. Strong anti-shock and anti-vibration, high reliability, long life. 体积小，重量轻。线圈功耗低，重接触载荷。强抗休克，抗振动，可靠性高，寿命长
|
DB Lectro Inc.
DB Lectro, Inc.
|
| ERG3DJW564E ERG2DJW434E ERG12DJW124E ERG12DJW134E |
Leaded, Anti-Pulse Power Resistors
|
Panasonic
|
| 474PPR262KH 682PPR102KE 223PPR102KE 103PPR102KE 33 |
Small Size Polypropylene Film Capacitors for High Pulse Current Applications
|
Illinois Capacitor, Inc...
|
| MCP1630 MCP1630E_MS MCP1630EMS MCP1630T MCP1630TE_ |
The MCP1630 is a high-speed Pulse Width Modulator (PWM) used to develop intelligent power systems. When used with a microcontroller, ...
High-Speed, Microcontroller-Adaptable,Pulse Width Modulator
High-Speed, Microcontroller-Adaptable, Pulse Width Modulator
|
Microchip Technology
|
| 2SD2131 E001165 |
NPN TRIPLE DIFFUSED TYPE (HIGH POWER SWITCHING, HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS) npn型三重扩散式（大功率开关，锤子驱动，脉冲马达驱动应用）
HIGH POWER SWITCHING APPLICATIONS HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS
From old datasheet system
|
Toshiba, Corp.
TOSHIBA[Toshiba Semiconductor]
|
| PHI214-30EL PH1214-30EL |
Radar Pulsed Power Transistor, 30W, 1.0ms Pulse, 10% Duty 1.2 - 1.4 GHz
High Speed Comparator; Package: PDIP; No of Pins: 16; Temperature Range: 0°C to 70°C
Radar Pulsed Power Transistor, 3OW, 1 .Oms Pulse, 10% Duty . 1.2 - 1.4 GHz
Radar Pulsed Power Transistor/ 3OW/ 1 .Oms Pulse/ 10% Duty . 1.2 - 1.4 GHz
|
Tyco Electronics
|
| 20KW256A 20KW160 20KW160A 20KW216 20KW216A 20KW240 |
256.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
160.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
216.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
240.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
120.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
192.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
112.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
300.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
204.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
232.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
280.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
172.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
180.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
144.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
|
MDE Semiconductor
|
| SCP-5282-1 SCP-5282-1U |
High Pulse Power Mil-STD-1275 Transzorb
|
Sensitron
|
| MP4410 |
Power MOS FET Module Silicon N Channel MOS Type (L2-pi-MOSV 4 in 1) High Power, High Speed Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.
|
TOSHIBA
|
