| PART |
Description |
Maker |
| 30KPA54A 30KPA84A 30KPA84C 30KPA132CA 30KPA43 30KP |
Diode TVS Single Uni-Dir 54V 30KW 2-Pin Case P600 T/R
Diode TVS Single Uni-Dir 84V 30KW 2-Pin Case P600 T/R
Diode TVS Single Bi-Dir 84V 30KW 2-Pin Case P600 T/R
Diode TVS Single Bi-Dir 132V 30KW 2-Pin Case P600 T/R
Diode TVS Single Uni-Dir 43V 30KW 2-Pin Case P600 T/R
Diode TVS Single Uni-Dir 30V 30KW 2-Pin Case P600 T/R
Diode TVS Single Uni-Dir 320V 30KW 2-Pin
Diode TVS Single Uni-Dir 400V 30KW 2-Pin Case P-600
Diode TVS Single Bi-Dir 30V 30KW 2-Pin Case P600 T/R
Diode TVS Single Bi-Dir 42V 30KW 2-Pin Case P600 T/R
Diode TVS Single Uni-Dir 51V 30KW 2-Pin Case P600 T/R
Diode TVS Single Bi-Dir 51V 30KW 2-Pin Case P600 T/R
Diode TVS Single Uni-Dir 58V 30KW 2-Pin Case P600 T/R
Diode TVS Single Bi-Dir 60V 30KW 2-Pin Case P600 T/R
Diode TVS Single Uni-Dir 60V 30KW 2-Pin Case P600 T/R
Diode TVS Single Uni-Dir 288V 30KW 2-Pin Case P600 T/R
Diode TVS Single Uni-Dir 144V 30KW 2-Pin Case P600 T/R
Diode TVS Single Bi-Dir 72V 30KW 2-Pin Case P600 T/R
Diode TVS Single Bi-Dir 198V 30KW 2-Pin Case P600 T/R
Diode TVS Single Uni-Dir 72V 30KW 2-Pin Case P600 T/R
Diode TVS Single Uni-Dir 71V 30KW 2-Pin Case P600 T/R
Diode TVS Single Bi-Dir 66V 30KW 2-Pin Case P600 T/R
Diode TVS Single Uni-Dir 66V 30KW 2-Pin Case P600 T/R
Diode TVS Single Uni-Dir 108V 30KW 2-Pin Case P600 T/R
Diode TVS Single Bi-Dir 108V 30KW 2-Pin Case P600 T/R
Diode TVS Single Uni-Dir 102V 30KW 2-Pin Case P600 T/R
Diode TVS Single Bi-Dir 102V 30KW 2-Pin Case P600 T/R
Diode TVS Single Uni-Dir 132V 30KW 2-Pin Case P600 T/R
Diode TVS Single Uni-Dir 78V 30KW 2-Pin Case P600 T/R
Diode TVS Single Bi-Dir 78V 30KW 2-Pin Case P600 T/R
Diode TVS Single Uni-Dir 198V 30KW 2-Pin Case P600 T/R
Diode TVS Single Bi-Dir 64V 30KW 2-Pin Case P600 T/R
|
New Jersey Semiconductor
|
| R15KP110 |
Diode TVS Single Uni-Dir 110V 15KW 2-Pin Case 5R
|
New Jersey Semiconductor
|
| 15KPA200 15KPA240A 15KPA24C 15KPA22A 15KPA26 15KPA |
Diode TVS Single Uni-Dir 200V 15KW 2-Pin Case P600 T/R
Diode TVS Single Uni-Dir 240V 15KW 2-Pin Case P600 Tape and Ammo
Diode TVS Single Bi-Dir 24V 15KW 2-Pin Case P600 T/R
Diode TVS Single Uni-Dir 22V 15KW 2-Pin Case P600 Tape and Ammo
Diode TVS Single Uni-Dir 26V 15KW 2-Pin Case P600 T/R
Diode TVS Single Bi-Dir 26V 15KW 2-Pin Case P600 T/R
Diode TVS Single Uni-Dir 24V 15KW 2-Pin Case P600 T/R
Diode TVS Single Uni-Dir 28V 15KW 2-Pin Case P600 T/R
Diode TVS Single Bi-Dir 18V 15KW 2-Pin Case P600 Tape and Ammo
Diode TVS Single Bi-Dir 18V 15KW 2-Pin Case P600 T/R
Diode TVS Single Uni-Dir 18V 15KW 2-Pin Case P600 Tape and Ammo
Diode TVS Single Uni-Dir 18V 15KW 2-Pin Case P600 T/R
Diode TVS Single Uni-Dir 17V 15KW 2-Pin Case P600 T/R
Diode TVS Single Uni-Dir 17V 15KW 2-Pin Case P600 Tape and Ammo
|
New Jersey Semiconductor
|
| M39832-B15WNE1T M39832-B15WNE6T M39832-B12WNE1T M3 |
TVS UNI-DIR 51V 600W DO-15
TVS UNI-DIR 30V 600W DO-15
RECTIFIER, BRIDGE, 600V, 6A, PB-6
TVS BI-DIR 30V 600W DO-15 单芯兆x812KB的x16闪存56千位并行EEPROM存储
|
意法半导
STMicroelectronics N.V.
|
| 1N6146A 1N6162 1N6155A 1N6153A 1N6160AUS 1N6171 1N |
Diode TVS Single Bi-Dir 11.4V 1.5KW 2-Pin
Diode TVS Single Bi-Dir 51.7V 1.5KW 2-Pin
Diode TVS Single Bi-Dir 27.4V 1.5KW 2-Pin
Diode TVS Single Bi-Dir 22.8V 1.5KW 2-Pin
Diode TVS Single Bi-Dir 42.6V 1.5KW 2-Pin SMD
Diode TVS Single Bi-Dir 121.6V 1.5KW 2-Pin
Diode TVS Single Bi-Dir 152V 1.5KW 2-Pin
Diode TVS Single Bi-Dir 47.1V 1.5KW 2-Pin
Diode TVS Single Bi-Dir 76V 1.5KW 2-Pin
Diode TVS Single Bi-Dir 5.7V 1.5KW 2-Pin
Diode TVS Single Bi-Dir 38.8V 1.5KW 2-Pin
|
New Jersey Semiconductor
|
| BDA224P BDA218P BDA234P BDA236P |
TVS Diode; TVS Polarization:Bidirectional; Stand-Off Voltage, VRWM:45V; Breakdown Voltage, Vbr:50V; Peak Pulse Power PPK @ 10x1000uS:500W; Package
DIODE TVS 33V 500W UNI-DIR
DIODE TVS 6.0V 500W BI-DIR
TVS Diode; TVS Polarization:Bidirectional; Stand-Off Voltage, VRWM:6.5V; Breakdown Voltage, Vbr:7.22V; Peak Pulse Power PPK @ 10x1000uS:500W; Package/Case:DO-204AC; Leaded Process Compatible:Yes 500毫升塑料BECHERGLAS
|
Panasonic, Corp.
|
| NX8563LA-AZ NX8563LA509-CD NX8563LAS509-CD NX8563L |
; Leaded Process Compatible:Yes
TVS UNI-DIR 68V 1500W DO-201
TVS BI-DIR 68V 1500W DO-201
3A 100V Schottky Rectifier; Package: Axial Lead 9.50x5.30mm, 25.4x1.20mm Pkg, Lead len/dia; No of Pins: 2; Container: Bulk; Qty per Container: 500
CONVERTER DC-DC 1W 5V/14V SGL
CONVERTER DC-DC 1W 5V/12V SGL
CONVERTER DC-DC 1W 7V/7V DUAL
DIODE ZENER SINGLE 200mW 5.6Vz 20mA-Izt 0.02504 0.5uA-Ir 2.5 SOD-323 3K/REEL
NECs DIRECTLY MODULATED InGaAsP MQW-DFB LASER DIODE MODULE FOR 2.5 GB/s, 110 KM AND 240 KM REACH DWDM METRO AND CATV APPLICATIONS 邻舍直接调制InGaAsP多量子阱激光器激光二极管模块.5 GB /秒，110公里40公里REACH的DWDM城域和有线电视领域的应用
MILITARY BATTERY RoHS Compliant: NA 邻舍直接调制InGaAsP多量子阱激光器激光二极管模块.5 GB /秒，110公里40公里REACH的DWDM城域和有线电视领域的应用
DIODE ZENER SINGLE 500mW 5.6Vz 20mA-Izt 0.02504 0.5uA-Ir 2.5 SOD-123 3K/REEL 邻舍直接调制InGaAsP多量子阱激光器激光二极管模块.5 GB /秒，110公里40公里REACH的DWDM城域和有线电视领域的应用
CONVERTER DC-DC 1W 5V/5V DUAL 邻舍直接调制InGaAsP多量子阱激光器激光二极管模块.5 GB /秒，110公里40公里REACH的DWDM城域和有线电视领域的应用
NECs DIRECTLY MODULATED InGaAsP MQW-DFB LASER DIODE MODULE FOR 2.5 GB/s, 110 KM AND 240 KM REACH DWDM METRO AND CATV APPLICATIONS 邻舍直接调制InGaAsP多量子阱激光器激光二极管模块2.5 GB /秒，110公里240公里REACH的DWDM城域和有线电视领域的应用
|
California Eastern Laboratories, Inc.
|
| SMAJ110CA-TP SMAJ14A-TP SMAJ43CA-TP MICROCOMMERCIA |
TVS 400W 110V BIDIRECT SMA 400 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC
TVS 400W 14V UNIDIRECT SMA 400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC
TVS 400W 43V BIDIRECT SMA 400 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC
TVS 400W 100V BIDIRECT SMA
TVS 400W 20V BIDIRECT SMA
|
Micro Commercial Components, Corp.
|
| TUSD05M2U |
Electro-Static Discharge TUSD05M2U Uni-Direction TVS Diode
|
StarHope
|
| TSMBG1005C TSMBG1006C TSMBG1007C TSMBG1009C TSMBG1 |
SINGLE BIDIRECTIONAL BREAKOVER DIODE|100V V(BO) MAX|DO-215AA
SINGLE BIDIRECTIONAL BREAKOVER DIODE|110V V(BO) MAX|DO-215AA
SINGLE BIDIRECTIONAL BREAKOVER DIODE|145V V(BO) MAX|DO-215AA
SINGLE BIDIRECTIONAL BREAKOVER DIODE|185V V(BO) MAX|DO-215AA
SINGLE BIDIRECTIONAL BREAKOVER DIODE|200V V(BO) MAX|DO-215AA
SINGLE BIDIRECTIONAL BREAKOVER DIODE|210V V(BO) MAX|DO-215AA
SINGLE BIDIRECTIONAL BREAKOVER DIODE|215V V(BO) MAX|DO-215AA
SINGLE BIDIRECTIONAL BREAKOVER DIODE|250V V(BO) MAX|DO-215AA
SINGLE BIDIRECTIONAL BREAKOVER DIODE|265V V(BO) MAX|DO-215AA
SINGLE BIDIRECTIONAL BREAKOVER DIODE|300V V(BO) MAX|DO-215AA
SINGLE BIDIRECTIONAL BREAKOVER DIODE|350V V(BO) MAX|DO-215AA
SINGLE BIDIRECTIONAL BREAKOVER DIODE|440V V(BO) MAX|DO-215AA 单双向击穿二极管| 440V五（公报）最大|的DO - 215AA
|
ITT, Corp.
|
| BDB02A |
DIODE TVS 16V 400W UNI 5% SMA 晶体管|晶体管|进步党| 45V的五（巴西）总裁| 500mA的一（c）|26AE
|
Motorola Mobility Holdings, Inc.
|
