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Ordering number:ENN6305
PNP/NPN Epitaxial Planar Silicon Transistors
2SA2011/2SC5564
DC/DC Converter Applications
Applications
* Relay drivers, lamp drivers, motor drivers, strobes.
Package Dimensions
unit:mm 2038A
[2SA2011/2SC5564]
4.5 1.6 1.5
Features
* Adoption of MBIT processes. * Large current capacitance. * Low collector-to-emitter saturation voltage. * High-speed switching. * Ultrasmall-sized package permitting applied sets to be made small and slim. * High allowable power dissipation.
0.5 3 1.5 2 3.0 0.75 1
1.0
0.4
2.5 4.25max
0.4
Specifications
( ) : 2SA2011 Absolute Maximum Ratings at Ta = 25C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg
Mounted on a ceramic board (250mm2x0.8mm) Tc=25C
1 : Base 2 : Collector 3 : Emitter SANYO : PCP (Bottom view)
Conditions
Ratings (-)15 (-12)15 (-)5 (-)6 (-)9 (-)600 1.3 3.5 150 -55 to +150
Unit V V V A A mA W W
C C
Electrical Characteristics at Ta = 25C
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Symbol ICBO IEBO hFE fT Cob VCB=(-)12V, IE=0 VEB=(-)4V, IC=0 VCE=(-)2V, IC=(-)500mA VCE=(-)2V, IC=(-)500mA VCB=(-)10V, f=1MHz 200 (350) 380 (41)23 Conditions Ratings min typ max (-)0.1 (-)0.1 560 MHz MHz pF Unit A A
Continued on next page. Marking : 2SA2011 : AR 2SC5564 : FA
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
21400TS (KOTO) TA-2519 No.6305-1/5
2SA2011/2SC5564
Continued on preceding page.
Parameter Symbol Conditions IC=(-)1.5A, IB=(-)30mA Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time VCE(sat) VBE(sat) IC=(-)3A, IB=(-)60mA IC=(-)1.5A, IB=(-)30mA (-)15 (-12) 15 (-)5 (35)30 (110) 190 15 Ratings min typ (-)120 (-190) 200 (-)0.85 max (-)180 (-290) 300 (-)1.2 Unit mV mV mV V V V V V ns ns ns ns
V(BR)CBO IC=(-)10A, IE=0 V(BR)CEO IC=(-)1mA, RBE= V(BR)EBO ton tstg tf IE=(-)10A, IC=0 See specified Test Circuit See specified Test Circuit See specified Test Circuit
Switching Time Test Circuit
PW=20s D.C.1% INPUT VR 50 RB + 100F VBE=--5V + 470F VCC=5V IB1 IB2 OUTPUT
RL
20IB1= --20IB2= IC=1.5A (For PNP, the polarity is reversed.)
--6
IC -- VCE
2SA2011 --90mA --80mA
6
IC -- VCE
2SC5564 90mA 80mA
--70mA --60mA
5
70
mA 60mA
--5
50mA 40mA
30mA
Collector Current, IC - A
--4
--40mA
Collector Current, IC - A
--50mA
4
--10 0m A
--30mA --20mA
100
mA
--3
3
20mA
--2
2
--10mA
--1
10mA
1
0 0 --0.2 --0.4 --0.6 --0.8
IB=0
--1.0 IT00115
0 0
IB=0
0.2 0.4 0.6 0.8 1.0 IT00116
Collector-to-Emitter Voltage, VCE - V
--6
Collector-to-Emitter Voltage, VCE - V
6
IC -- VBE
2SA2011 VCE=--2V
IC -- VBE
2SC5564 VCE=2V
--5
5
Collector Current, IC - A
Collector Current, IC - A
--4
4
25C
--3
25C
3
--2
2
Ta=7 5
5C
C
Ta= 7
0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4
--25
C
--1
1
0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 IT00118
Base-to-Emitter Voltage, VBE - V
IT00117
Base-to-Emitter Voltage, VBE - V
--25C
No.6305-2/5
2SA2011/2SC5564
1000 7 5
hFE -- IC
2SA2011 VCE=--2V Ta=75C
1000 7 5
hFE -- IC
Ta=75C 25C --25C 2SC5564 VCE=2V
DC Current Gain, hFE
2
25C --25C
DC Current Gain, hFE
3
3 2
100 7 5 3 2
100 7 5 3 2
10 --0.01
2
3
5 7 --0.1
2
3
Collector Current, IC - A
5 7 --1.0
2
3
5 7 --10 IT00119
10 0.01
2
3
5 7 0.1
2
3
Collector Current, IC - A
5 7 1.0
2
3
5 7 10 IT00120
--1000 7
VCE(sat) -- IC
2SA2011 IC / IB=20
1000 7
VCE(sat) -- IC
2SC5564 IC / IB=20
Collector-to-Emitter Saturation Voltage, VCE (sat) - mV
5 3 2
Collector-to-Emitter Saturation Voltage, VCE (sat) - mV
5 3 2 100 7 5 3 2 10 7 5 0.01
--100 7 5 3 2 --10 7 5 --0.01
= Ta
C 75
25C
5C --2
C 5 =7 Ta C 5 --2
25C
2
3
5 7 --0.1
2
3
Collector Current, IC - A
5 7 --1.0
2
3
5 7 --10 IT00121
2
3
5 7 0.1
2
3
5 7 1.0
2
3
Collector Current, IC - A
1000
5 7 10 IT00123
--1000 7
VCE(sat) -- IC
2SA2011 IC / IB=50
VCE(sat) -- IC
2SC5564 IC / IB=50
7
Collector-to-Emitter Saturation Voltage, VCE (sat) - mV
5 3 2
Collector-to-Emitter Saturation Voltage, VCE (sat) - mV
5 3 2
--100 7 5
= Ta
--2 C 5
75
C
100 7 5 3 2
= Ta
75
C
25C
25C
3 2 --10 --0.01
C 5 --2
2
3
5 7 --0.1
2
3
5 7 --1.0
2
3
Collector Current, IC - A
--10 7
5 7 --10 IT00122
10 0.01
2
3
5 7 0.1
2
3
5 7 1.0
2
3
Collector Current, IC - A
10
5 7 10 IT00124
VBE(sat) -- IC
2SA2011 IC / IB=50
VBE(sat) -- IC
2SC5564 IC / IB=50
7
Base-to-Emitter Saturation Voltage, VBE (sat) - V
Base-to-Emitter Saturation Voltage, VBE (sat) - V
5 3 2
5 3 2
--1.0 7 5 3 2
Ta=--25C 75C 25C
1.0 7 5 3 2
Ta=--25C 75C 25C
--0.1 --0.01
2
3
5 7 --0.1
2
3
Collector Current, IC - A
5 7 --1.0
2
3
5 7 --10 IT00125
0.1 0.01
2
3
5 7 0.1
2
3
5 7 1.0
2
3
Collector Current, IC - A
5 7 10 IT00126
No.6305-3/5
2SA2011/2SC5564
100 7
Cob -- VCB
2SA2011 f=1MHz
Output Capacitance, Cob - pF
100 7 5 3 2
Cob -- VCB
2SC5564 f=1MHz
Output Capacitance, Cob - pF
5 3 2
10 7 5 3 2 1.0 --1.0
10 7 5 3 2 1.0 1.0
2
3
5
7
Collector-to-Base Voltage, VCB -- V
--10
2 IT00127
2
3
5
7
Collector-to-Base Voltage, VCB -- V
10
2 IT00128
Gain-Bandwidth Product, fT - MHz
3 2
Gain-Bandwidth Product, fT - MHz
1000 7 5
f T -- IC
2SA2011 VCE=--2V
1000 7 5 3 2
f T -- IC
2SC5564 VCE=2V
100 7 5 3 2 10 7 5 3 2 1.0 --0.01
100 7 5 3 2 10 7 5 3 2 1.0 0.01
2
3
5 7 --0.1
2
3
5 7 --1.0
2
3
Collector Current, IC - A
2 --10 7 5
5 7 --10 IT00129
2
3
5 7 0.1
2
3
5 7 1.0
2
3
ASO
Collector Current, IC - A
2
5 7 10 IT00130
ASO
ICP IC
100ms
1ms
10
DC
10
Collector Current, IC - A
Collector Current, IC - A
ms
0
s
10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2
ICP IC
DC
1ms
10
10
10
0m
rat
s 0
ms
50
50 s 0
s 0
3 2
s
op
--1.0 7 5 3 2
era
tio
ope
n
ion
--0.1 7 5 3 2
--0.01 --0.1
2SA2011 Tc=25C Single pulse
2 3 5 7 --1.0 2 3 5 7 --10 2 3
0.01 0.1
2SC5564 Tc=25C Single pulse
2 3 5 7 1.0 2 3 5 7 10 2 IT00132
Collector-to-Emitter Voltage, VCE - V
2.0
IT00131 4.0
Collector-to-Emitter Voltage, VCE - V
PC -- Ta
2SA2011 / 2SC5564
PC -- Tc
2SA2011 / 2SC5564
3.5
Collector Dissipation, PC - W
1.5 1.3
Collector Dissipation, PC - W
m)
140 160
3.0 2.5 2.0 1.5 1.0 0.5 0
M
ou
nte
1.0
do
na
ce
ram
ic
bo
ard
0.5
(25
0m
m2 x0
.8m
0 0 20 40 60 80 100 120
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta - C
IT00133
Case Temperature, Tc - C
IT01536
No.6305-4/5
2SA2011/2SC5564
Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties.
This catalog provides information as of February, 2000. Specifications and information herein are subject to change without notice.
PS No.6305-5/5

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