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| Transistor 2SB726 Silicon PNP epitaxial planer type For general amplification Unit: mm 5.00.2 5.10.2 4.00.2 s Features q q High foward current transfer ratio hFE. High collector to emitter voltage VCEO. s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg (Ta=25C) Ratings -80 -80 -5 -100 250 150 -55 ~ +150 Unit V V V 13.50.5 0.45 -0.1 1.27 +0.2 0.45 -0.1 1.27 +0.2 123 2.30.2 mA mW C C 2.540.15 1:Emitter 2:Collector 3:Base JEDEC:TO-92 EIAJ:SC-43A s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter voltage Transition frequency (Ta=25C) Symbol ICBO ICEO VCBO VCEO VEBO hFE * Conditions VCB = -10V, IE = 0 VCE = -10V, IB = 0 IC = -10A, IE = 0 IC = -2mA, IB = 0 IE = -10A, IC = 0 VCB = -5V, IE = -2mA IC = -20mA, IB = -2mA VCE = -1V, IC = -100mA VCB = -5V, IE = 2mA, f = 200MHz min typ max -100 -1 Unit nA A V V V -80 -80 -5 180 700 - 0.6 -1 150 -1.2 VCE(sat) VBE fT V V MHz *h FE Rank classification R 180 ~ 360 S 260 ~ 520 T 360 ~ 700 hFE Rank 1 Transistor PC -- Ta 500 -80 Ta=25C -70 -50 25C Ta=75C -40 -25C 2SB726 IC -- VCE -60 VCE=-5V IC -- VBE Collector power dissipation PC (mW) 450 Collector current IC (mA) -60 -50 -40 -30 -20 350 300 250 200 150 100 50 0 0 40 80 120 160 200 IB=-200A -180A -180A -140A -120A -100A -80A -60A -40A Collector current IC (mA) 400 -30 -20 -10 -10 0 0 -2 -4 -6 -8 -10 -12 -20A 0 0 - 0.4 - 0.8 -1.2 -1.6 -2.0 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) -100 -30 -10 -3 -1 Ta=75C 25C -25C IC/IB=10 600 hFE -- IC 240 VCE=-5V fT -- I E VCB=-5V Ta=25C Forward current transfer ratio hFE 500 Ta=75C 25C -25C Transition frequency fT (MHz) -100 200 400 160 300 120 - 0.3 - 0.1 - 0.03 - 0.01 - 0.1 - 0.3 200 80 100 40 -1 -3 -10 -30 -100 0 - 0.1 - 0.3 0 -1 -3 -10 -30 1 3 10 30 100 Collector current IC (mA) Collector current IC (mA) Emitter current IE (mA) Cob -- VCB 10 Collector output capacitance Cob (pF) 9 8 7 6 5 4 3 2 1 0 -1 IE=0 f=1MHz Ta=25C -3 -10 -30 -100 Collector to base voltage VCB (V) 2 |
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