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| Transistor 2SB779 Silicon PNP epitaxial planer type For low-frequency output amplification Unit: mm s Features q q q 2.8 -0.3 0.650.15 +0.2 +0.25 1.5 -0.05 0.650.15 2 1.1 -0.1 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings -25 -20 -7 -1 - 0.5 200 150 -55 ~ +150 Unit V V V A A mW C C 1:Base 2:Emitter 3:Collector JEDEC:TO-236 EIAJ:SC-59 Mini Type Package Marking symbol : 1A s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance (Ta=25C) Symbol ICBO ICEO VCBO VCEO VEBO hFE1 hFE2 VCE(sat) VBE(sat) fT Cob *1 Conditions VCB = -25V, IE = 0 VCE = -20V, IB = 0 IC = -10A, IE = 0 IC = -1mA, IB = 0 IE = -10A, IC = 0 VCE = -2V, IC = -0.5A*2 VCE = -2V, IC = -1A*2 IC = -500mA, IB = -50mA*2 IC = -500mA, IB = -50mA*2 VCB = -10V, IE = 50mA, f = 200MHz VCB = -10V, IE = 0, f = 1MHz min typ 0 to 0.1 0.1 to 0.3 0.40.2 0.8 max -100 -1 0.16 -0.06 +0.2 s Absolute Maximum Ratings +0.1 (Ta=25C) 0.4 -0.05 Low collector to emitter saturation voltage VCE(sat). Satisfactory linearity of hFE at the low collector voltage. Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 0.95 2.9 -0.05 1 1.90.2 +0.2 0.95 3 +0.1 1.45 Unit nA A V V V -25 -20 -7 90 25 - 0.2 - 0.4 -1.2 150 15 *2 220 V V MHz pF Pulse measurement *h FE1 Rank classification Rank hFE1 Q 90 ~ 155 1AQ R 130 ~ 220 1AR Marking Symbol 1 Transistor PC -- Ta Collector to emitter saturation voltage VCE(sat) (V) 240 -100 -30 -10 -3 -1 Ta=75C 25C -25C 2SB779 VCE(sat) -- IC Base to emitter saturation voltage VBE(sat) (V) IC/IB=10 -100 -30 -10 -3 25C -1 75C Ta=-25C VBE(sat) -- IC IC/IB=10 Collector power dissipation PC (mW) 200 160 120 80 - 0.3 - 0.1 - 0.03 - 0.3 - 0.1 - 0.03 - 0.01 - 0.01 - 0.03 - 0.1 - 0.3 40 0 0 20 40 60 80 100 120 140 160 - 0.01 - 0.01 - 0.03 - 0.1 - 0.3 -1 -3 -10 -1 -3 -10 Ambient temperature Ta (C) Collector current IC (A) Collector current IC (A) hFE -- IC 600 VCE=-2V 400 360 500 fT -- I E Collector output capacitance Cob (pF) VCB=-10V Ta=25C 60 Cob -- VCB IE=0 f=1MHz Ta=25C Forward current transfer ratio hFE Transition frequency fT (MHz) 320 280 240 200 160 120 80 40 50 400 40 300 Ta=75C 25C 30 200 -25C 20 100 10 0 - 0.01 - 0.03 - 0.1 - 0.3 -1 -3 -10 0 0.1 0.3 1 3 10 30 100 0 -1 -3 -10 -30 -100 Collector current IC (A) Emitter current IE (mA) Collector to base voltage VCB (V) 2 |
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