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| SHINDENGEN General Purpose Rectifiers SIL Bridges D2SB60A 600V 2A OUTLINE DIMENSIONS Case : 2S Unit : mm RATINGS *oeAbsolute Maximum Ratings (If not specified Tl=25*Z) Item Symbol Conditions Ratings Unit Storage Temperature Tstg -40*150 *Z Operating Junction Temperature Tj 150 *Z Maximum Reverse Voltage VRM 600 V IO 50Hz sine wave, R-load Tl=115*Z Average Rectified Forward Current 2.0 A 50Hz sine wave, R-load Ta=25*Z 1.5 Peak Surge Forward CurrentIFSM 50Hz sine wave, Non-repetitive 1cycle peak value, Tj=25 *Z 120 A I2t 1ms*...t*10ms*@Tj=25*Z A2s Current Squared Time 60 *oeElectrical Characteristics (If not specified Tl=25*Z) Item Symbol Conditions Ratings Unit VF IF Forward Voltage =1A, Pulse measurement,Rating of per diode Max.0.95 V IR V =600V, Pulse measurement,Rating of per diodeMax.10 EA Reverse Current R Thermal Resistance AEjl junction to lead Max.10 *Z/W AEja junction to ambient Max.47 Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd D2SB60A Forward Voltage 10 Forward Current IF [A] Tc=150C [TYP] 1 Tc=25C [TYP] Pulse measurement per diode 0.1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 Forward Voltage VF [V] D2SB60A 5 Forward Power Dissipation Forward Power Dissipation PF [W] 4 3 2 1 0 0 0.5 1 1.5 2 2.5 Average Rectified Forward Current IO [A] Tj = 150C Sine wave D2SB60A 2 Derating Curve Average Rectified Forward Current IO [A] 1.5 SIN PCB Glass-epoxy substrate Soldering land 5mm 1 0.5 0 0 20 40 60 80 100 120 140 160 Ambient Temperature Ta [C] Sine wave R-load Free in air D2SB60A 3 Derating Curve Average Rectified Forward Current IO [A] Glass-epoxy substrate Soldering land 5mm 2.5 SIN 2 PCB 1.5 1 0.5 0 0 20 40 60 80 100 120 140 160 Lead Temperature Tl [C] Sine wave R-load Free in air D2SB60A 200 Peak Surge Forward Capability IFSM 10ms 10ms 1 cycle Peak Surge Forward Current IFSM [A] 150 non-repetitive, sine wave, Tj=25C before surge current is applied 100 50 0 1 2 5 10 20 50 100 Number of Cycles [cycles] |
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