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DCR806SG
DCR806SG
Phase Control Thyristor Advance Information
Supersedes August 2000 version, DS4642-5.1 DS4642 -6.0 July 2001
FEATURES
s Double Side Cooling s High Surge Capability s High Mean Current
KEY PARAMETERS VDRM IT(AV) ITSM dVdt* dI/dt 2800V 844A 11250A 1000V/s 500A/s
APPLICATIONS
s High Power Drives s High Voltage Power Supplies s DC Motor Control s Power Supplies
*Higher dV/dt selections available
VOLTAGE RATINGS
Type Number Repetitive Peak Voltages VDRM VRRM V 2800 2700 2600 2500 2400 Conditions
DCR806SG28 DCR806SG27 DCR806SG26 DCR806SG25 DCR806SG24
Tvj = 0 to 125C, IDRM = IRRM = 50mA, VDRM, VRRM tp = 10ms, VDSM & VRSM = VDRM & VRRM + 100V Respectively
Outline type code: G. See Package Details for further information. Fig. 1 Package outline
Lower voltage grades available.
ORDERING INFORMATION
When ordering, select the required part number shown in the Voltage Ratings selection table. For example: DCR806SG26 Note: Please use the complete part number when ordering and quote this number in any future correspondance relating to your order.
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DCR806SG
CURRENT RATINGS
Tcase = 60C unless stated otherwise Symbol Double Side Cooled IT(AV) IT(RMS) IT Mean on-state current RMS value Continuous (direct) on-state current Half wave resistive load 844 1326 1201 A A A Parameter Conditions Max. Units
Single Side Cooled (Anode side) IT(AV) IT(RMS) IT Mean on-state current RMS value Continuous (direct) on-state current Half wave resistive load 555 872 733 A A A
CURRENT RATINGS
Tcase = 80C unless stated otherwise Symbol Double Side Cooled IT(AV) IT(RMS) IT Mean on-state current RMS value Continuous (direct) on-state current Half wave resistive load 670 1050 875 A A A Parameter Conditions Max. Units
Single Side Cooled (Anode side) IT(AV) IT(RMS) IT Mean on-state current RMS value Continuous (direct) on-state current Half wave resistive load 430 675 540 A A A
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SURGE RATINGS
Symbol ITSM I2t ITSM I2t Parameter Surge (non-repetitive) on-state current I2t for fusing Surge (non-repetitive) on-state current I2t for fusing Conditions 10ms half sine; Tcase = 125oC VR = 50% VRRM - 1/4 sine 10ms half sine; Tcase = 125oC VR = 0 Max. 9.0 405 x 103 11.25 633 x 103 Units kA A2s kA A2s
THERMAL AND MECHANICAL DATA
Symbol Parameter Conditions Double side cooled Rth(j-c) Thermal resistance - junction to case Single side cooled Cathode dc Clamping force 12.5kN with mounting compound On-state (conducting) Tvj Virtual junction temperature Reverse (blocking) Tstg Storage temperature range Clamping force -55 11.0 125 125 13.0
o
Min. dc Anode dc -
Max. 0.032 0.064 0.064 0.008 0.016 135
Units
o
C/W
o
C/W C/W C/W C/W
o
o
Double side Single side
o
Rth(c-h)
Thermal resistance - case to heatsink
o
C
C C
o
kN
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DCR806SG
DYNAMIC CHARACTERISTICS
Symbol IRRM/IDRM dV/dt Parameter Peak reverse and off-state current Maximum linear rate of rise of off-state voltage Conditions At VRRM/VDRM, Tcase = 125oC To 67% VDRM Tj = 125oC. Gate open circuit. From 67% VDRM to 1500A Gate source 1.5A tr = 0.5s, Tj = 125oC At Tvj = 125oC At Tvj = 125oC VD = 67% VDRM, Gate source 30V, 15 tr = 0.5s, Tj = 25oC Repetitive 50Hz Non-repetitive Typ. Max. 50 1000 300 500 0.91 0.65 1.5 Units mA V/s A/s A/s V m s
dI/dt
Rate of rise of on-state current
VT(TO) rT tgd
Threshold voltage On-state slope resistance Delay time
tq
Turn-off time
IT = 500A, tp = 1ms, Tj = 125C, VR = 50V, dIRR/dt = 20A/s, VDR = 67% VDRM, dVDR/dt = 20V/s linear
Tj = 25oC, VD = 5V Tj = 25oC, VD = 5V
300
500
s
IL IH
Latching current Holding current
550 60
1000 100
mA mA
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol VGT IGT VGD VFGM VFGN VRGM IFGM PGM PG(AV) Parameter Gate trigger voltage Gate trigger current Gate non-trigger voltage Peak forward gate voltage Peak forward gate voltage Peak reverse gate voltage Peak forward gate current Peak gate power Mean gate power Anode positive with respect to cathode See table, gate characteristics curve Conditions VDRM = 5V, Tcase = 25oC VDRM = 5V, Tcase = 25oC At VDRM Tcase = 125oC Anode positive with respect to cathode Anode negative with respect to cathode Max. 3.5 200 0.25 30 0.25 5 10 150 10 Units V mA V V V V A W W
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DCR806SG
CURVES
2500 Measured under pulse conditions
3000
1: Tj = 125C Min 2: Tj = 125C Max 1 2
2500
Instantaneous on-state current, IT - (A)
2000
2000
Power loss - (W)
1500
1500
1000
1000
500
500 D.C. Half wave 3 Phase 6 Phase 500 1000 1500 Mean current, IT(AV) - (A) 2000
0 0.5
1.0 1.5 2.0 Instantaneous on-state voltage, VT - (V)
2.5
0 0
Fig.2 Maximum (limit) on-state characteristics VTM Equation:VTM = A + Bln (IT) + C.IT+D.IT Where A = 0.6102629 B = 0.08049203 C = 7.189037 x 10-4 D = -0.01028328 these values are valid for Tj = 125C for IT 500A to 2500A
Fig.3 Dissipation curves
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DCR806SG
10000
IT QS dI/dt IRR
100
IT = 1250A IT = 500A Max. value
Total stored charge QS - (C)
1000
IT = 1250A IT = 500A Min. value
Gate trigger voltage VGT - (V)
Pulse width Frequency Hz Table gives pulse power PGM in Watts s 50 100 400 100 150 150 150 200 150 150 125 500 150 150 100 1ms 150 100 25 10ms 20 - -
0W 10 W 50
W 20 W 10 5W
10
U
1
rl ppe
imi
t 99
%
Tj = 25C Tj = -40C
Region of certain triggering
100 0.1
Conditions: QS is total integral stored charge Tj = 125C 1.0 10 Rate of decay of on-state current dI/dt - (A/s) 100
VGD
Low
mi er li
t 99
%
0.1 0.001
0.01
Tj = 125C
0.1
1
Gate trigger current, IGT - (A)
10 IFGM
Fig.4 Stored charge
25
Fig.5 Gate characteristics
0.1 Anode side cooled
I2t = I2 x t 2 20
Peak half sine wave on-state current - (kA)
Thermal Impedance - Junction to case (C/W)
Double side cooled
15
400
0.01
I2t value - (A2s x 103)
10 I2t
350
Conduction
Effective thermal resistance Junction to case C/W Anode side 0.064 0.066 0.076 0.089
5
300
Double side d.c. 0.032 Halfwave 0.034 3 phase 120 0.044 6 phase 60 0.057
0.001 0.001
0.01
0.1 Time - (s)
1.0
10
0 1 ms
10
1
2 3 45
10
250 20 30 50
Cycles at 50Hz Duration
Fig.6 Maximum (limit) transient thermal impedance junction to case
Fig.7 Surge (non-repetitive) on-state current vs time (with 50% VRRM at Tcase 125C)
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DCR806SG
PACKAGE DETAILS
For further package information, please contact your nearest Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE.
Hole O3.6x2.0 deep (in both electrodes)
Cathode tab
Cathode O58.5 max O34 nom
O1.5 Gate 27.0 25.4 O34 nom Anode
Nominal weight: 250g Clamping force: 12.5kN 10% Lead length: 420mm Lead terminal connector: M4 ring Package outline type code: G
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DCR806SG
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution (PACs).
DEVICE CLAMPS
Disc devices require the correct clamping force to ensure their safe operation. The PACS range includes a varied selection of preloaded clamps to suit all of our manufactured devices. Types available include cube clamps for single side cooling of `T' 23mm and `E' 30mm discs, and bar clamps right up to 83kN of our `Z' 100mm thyristors and diodes. Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies. Please refer to our application note on device clamping, AN4839 HEATSINKS The Power Assembly group has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimize the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer service office.
http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com
HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: 00-44-(0)1522-500500 Fax: 00-44-(0)1522-500550 DYNEX POWER INC. 99 Bank Street, Suite 410, Ottawa, Ontario, Canada, K1P 6B9 Tel: 613.723.7035 Fax: 613.723.1518 Toll Free: 1.888.33.DYNEX (39639) CUSTOMER SERVICE CENTRES Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 North America Tel: (613) 723-7035. Fax: (613) 723-1518. UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 SALES OFFICES Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) / Tel: (949) 733-3005. Fax: (949) 733-2986. UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 These offices are supported by Representatives and Distributors in many countries world-wide. (c) Dynex Semiconductor 2001 Publication No. DS4642-6 Issue No. 6.0 July 2001 TECHNICAL DOCUMENTATION - NOT FOR RESALE. PRINTED IN UNITED KINGDOM
Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification.
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
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