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DS1109SG DS1109SG Rectifier Diode Replaces January 2000 version, DS4169-3.0 DS4169-4.0 August 2001 FEATURES s Double Side Cooling s High Surge Capability KEY PARAMETERS VRRM 5000V IF(AV) 910A IFSM 11500A APPLICATIONS s Rectification s Freewheel Diode s DC Motor Control s Power Supplies s Welding s Battery Chargers VOLTAGE RATINGS Type Number Repetitive Peak Reverse Voltage VRRM V Conditions DS1109SG50 5000 DS1109SG49 4900 DS1109SG48 4800 DS1109SG47 4700 DS1109SG46 4600 DS1109SG45 4500 Lower voltage grades available. VRSM = VRRM + 100V Outline type code: G See Package Details for further information. Fig. 1 Package outline ORDERING INFORMATION When ordering, select the required part number shown in the Voltage Ratings selection table, e.g.: DS1109SG49 Note: Please use the complete part number when ordering and quote this number in any future correspondance relating to your order. 1/7 www.dynexsemi.com DS1109SG CURRENT RATINGS Tcase = 75oC unless otherwise stated Symbol Double Side Cooled IF(AV) IF(RMS) IF Mean forward current RMS value Continuous (direct) forward current Half wave resistive load 910 1430 1314 A A A Parameter Conditions Max. Units Single Side Cooled (Anode side) IF(AV) IF(RMS) IF Mean forward current RMS value Continuous (direct) forward current Half wave resistive load 599 941 814 A A A Tcase = 100oC unless otherwise stated Symbol Double Side Cooled IF(AV) IF(RMS) IF Mean forward current RMS value Continuous (direct) forward current Half wave resistive load 710 1115 1000 A A A Parameter Conditions Max. Units Single Side Cooled (Anode side) IF(AV) IF(RMS) IF Mean forward current RMS value Continuous (direct) forward current Half wave resistive load 450 706 570 A A A 2/7 www.dynexsemi.com DS1109SG SURGE RATINGS Symbol IFSM I2t IFSM I2t Parameter Surge (non-repetitive) forward current I2t for fusing Surge (non-repetitive) forward current I2t for fusing Conditions 10ms half sine; Tcase = 150oC VR = 50% VRRM - 1/4 sine 10ms half sine; Tcase = 150oC VR = 0 Max. 9.2 422 x 103 11.5 660 x 103 Units kA A2s kA A2s THERMAL AND MECHANICAL DATA Symbol Parameter Conditions Double side cooled Rth(j-c) Thermal resistance - junction to case Single side cooled Cathode dc Clamping force 12.0kN with mounting compound Forward (conducting) Tvj Virtual junction temperature Reverse (blocking) Tstg Storage temperature range Clamping force -55 11.5 150 175 13.5 o Min. dc Anode dc - Max. 0.032 0.064 0.064 0.008 0.016 160 Units o C/W o C/W C/W C/W C/W o o Double side Single side o Rth(c-h) Thermal resistance - case to heatsink o C C C o kN 3/7 www.dynexsemi.com DS1109SG CHARACTERISTICS Symbol VFM IRM QS Irr VTO rT Parameter Forward voltage Peak reverse current Total stored charge Reverse recovery current Threshold voltage Slope resistance Conditions At 1800A peak, Tcase = 25oC At VRRM, Tcase = 150oC IF = 1000A, dIRR/dt = 3A/s Tcase = 150C, VR = 100V At Tvj = 150C At Tvj = 150C Min. Max. 1.8 50 2600 80 0.88 0.687 Units V mA C A V m CURVES 2500 2500 Measured under pulse conditions dc Half wave 2000 2000 3 phase Instantaneous forward current, IF - (A) 1500 Tj = 25C Tj = 150C Mean power dissipation - (W) 1500 6 phase 1000 1000 500 500 0 0.5 1.0 1.5 2.0 Instantaneous forward voltage, VF - (V) 2.5 0 0 500 1000 1500 Mean forward current, IF(AV) - (A) 2000 Fig.2 Maximum (limit) forward characteristics VFM Equation:VFM = A + Bln (IF) + C.IF+D.IF Where Fig.3 Dissipation curves A = 0.788646 B = -0.0045 C = 0.000592 D = 0.006984 these values are valid for Tj = 125C for IF 500A to 2500A 4/7 www.dynexsemi.com DS1109SG 10000 Conditions: Tj = 150C VR = 100V IF = 1000A 1000 Conditions: Tj = 150C VR = 100V IF = 1000A Reverse recovery current, Irr - (A) IF QS dIF/dt IRM Stored charge, QS - (C) 1000 100 100 0.1 1.0 10 Rate of decay of on-state current, dIF/dt - (A/s) 100 10 0.1 1.0 10 Rate of decay of forward current, dIF/dt - (A/s) 100 Fig.4 Total stored charge 450 I2t = I2 x t Thermal Impedance - junction to case, Rth(j-c) - (C/W) Fig.5 Maximum reverse recovery current 30 2 25 Peak half sine forward current - (kA) 0.1 Anode side cooled 425 Double side cooled 20 400 I2t value - (A2s x 103) 15 375 0.01 10 I2t 5 350 Conduction 325 Effective thermal resistance Junction to case C/W Double side 0.032 0.034 0.044 0.057 Single side 0.064 0.066 0.076 0.089 0 1 ms 10 1 23 5 10 20 300 50 d.c. Halfwave 3 phase 120 6 phase 60 0.001 0.001 0.01 Cycles at 50Hz Duration 0.1 Time - (s) 1.0 10 Fig.6 Surge (non-repetitive) forward current vs time (with 50% VRRM at Tcase 150C) Fig.7 Maximum (limit) transient thermal impedance junction to case 5/7 www.dynexsemi.com DS1109SG PACKAGE DETAILS For further package information, please contact your nearest Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE. Hole O3.6 x 2.0 deep (in both electrodes) Cathode O58.5 max O34 nom O34 nom Anode Nominal weight: 250g Clamping force: 12kN 10% Package outine type code: G Note: 1. Package maybe supplied with pins and/or tags. 6/7 27.0 25.4 www.dynexsemi.com DS1109SG POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the up to date CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete solution (PACs). DEVICE CLAMPS Disc devices require the correct clamping force to ensure their safe operation. The PACs range offers a varied selection of pre-loaded clamps to suit all of our manufactured devices. This include cube clamps for single side cooling of `T' 22mm Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies. Please refer to our application note on device clamping, AN4839 HEATSINKS Power Assembly has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the performance or our semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest Sales Representative or Customer Services. http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: 00-44-(0)1522-500500 Fax: 00-44-(0)1522-500550 DYNEX POWER INC. 99 Bank Street, Suite 410, Ottawa, Ontario, Canada, K1P 6B9 Tel: 613.723.7035 Fax: 613.723.1518 Toll Free: 1.888.33.DYNEX (39639) CUSTOMER SERVICE CENTRES Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 North America Tel: (613) 723-7035. Fax: (613) 723-1518. UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 SALES OFFICES Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) / Tel: (949) 733-3005. Fax: (949) 733-2986. UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 These offices are supported by Representatives and Distributors in many countries world-wide. (c) Dynex Semiconductor 2001 Publication No. DS4169-4 Issue No. 4.0 August 2001 TECHNICAL DOCUMENTATION - NOT FOR RESALE. PRINTED IN UNITED KINGDOM Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification. This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. 7/7 www.dynexsemi.com |
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