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PD- 93762
IRF7807D2
FETKYTM MOSFET / SCHOTTKY DIODE
* Co-Pack N-channel HEXFET(R) Power MOSFET and Schottky Diode * Ideal for Synchronous Rectifiers in DC-DC Converters up to 5A Output * Low Conduction Losses * Low Switching Losses * Low Vf Schottky Rectifier Description The FETKYTM family of Co-Pack HEXFET(R) MOSFETs and Schottky diodes offers the designer an innovative, board space saving solution for switching regulator and power management applications. HEXFET power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this technology with International Rectifier's low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics. The SO8 package is designed for vapor phase, infrared or wave soldering techniques. Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain or Source Current (VGS 4.5V) Pulsed Drain Current Power Dissipation Schottky and Body Diode Average ForwardCurrent 25C 70C 25C 70C TJ, TSTG IF (AV) 25C 70C IDM PD Symbol VDS VGS ID Max. 30 12 8.3 6.6 66 2.5 1.6 3.7 2.3 -55 to 150 C W A A Units V
A/S A/S A/S G
1 8
K/D K/D K/D K/D D
2
7
3
6
4
5
SO-8
Top View
Device Features (Max Values)
IRF7807D2
VDS RDS(on) Qg QSW Qoss
30V 25m 14nC 5.2nC 21.6nC
Junction & Storage Temperature Range Thermal Resistance Parameter Maximum Junction-to-Ambient
RJA
Max. 50
Units C/W
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11/8/99
IRF7807D2
Electrical Characteristics Parameter Drain-to-Source Breakdown Voltage* Static Drain-Source on Resistance* Drain-Source Leakage Current* V(BR)DSS RDS(on) 1.0 90 7.2 Min 30 17 25 Typ Max Units V m V A mA Conditions VGS = 0V, ID = 250A VGS = 4.5V, ID = 7A VDS = VGS,ID = 250A VDS = 24V, VGS = 0V VDS = 24V, VGS = 0V, Tj = 125C VGS = +/-12V VDS<100mV, VGS = 5V, ID = 7A VDS= 16V, VGS = 5V, ID = 7A VDS = 16V, ID = 7A nC
Gate Threshold Voltage* VGS(th) IDSS
Gate-Source Leakage Current* Total Gate Charge Synch FET* Total Gate Charge Control FET* Pre-Vth Gate-Source Charge Post-Vth Gate-Source Charge Gate to Drain Charge Switch Charge* (Qgs2 + Qgd) Output Charge* Gate Resistance
IGSS Qgsync Qgcont Qgs1 Qgs2 Qgd QSW Qoss Rg 10.5 12 2.1 0.76 2.9 3.66 17.6 1.2
+/- 100 14 17
nA
5.2 21.6 VDS = 16V, VGS = 0
Schottky Diode & Body Diode Ratings and Characteristics Parameter Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min VSD trr Qrr ton 36 41 Typ Max 0.54 0.43 Units Conditions V Tj = 25C, Is = 3A, VGS =0V Tj = 125C, Is = 3A, VGS =0V ns Tj = 25C, Is = 7.0A, VDS = 16V nC di/dt = 100A/s
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
*
Repetitive rating; pulse width limited by max. junction temperature. Pulse width 300 s; duty cycle 2%. When mounted on 1 inch square copper board, t < 10 sec. 50% Duty Cycle, Rectangular Devices are 100% tested to these parameters.
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IRF7807D2
100 VGS TOP 4.5V 3.5V 3.0V BOTTOM 2.5V 100 VGS 4.5V 3.5V 3.0V BOTTOM 2.5V TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
2.5V
10
10
2.5V
380s PULSE WIDTH Tj = 25C
1 0.1 1 10 1 0.1
380s PULSE WIDTH Tj = 150C
1 10
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
70 60 50 40 30 20 10 0 0 0.2 0.4 0.6 0.8 1 VGS TOP 4.5V 3.5V 3.0V 2.5V 2.0V BOTTOM 0.0V
70 60 50 40 30 20 10 0 0 0.2 0.4 0.6 0.8 1 VGS 4.5V 3.5V 3.0V 2.5V 2.0V BOTTOM 0.0V TOP
IS, Source-to-Drain Current (A)
IS, Source-to-Drain Current (A)
0.0 V 380s PULSE WIDTH Tj = 25C
O.OV 380S PULSE WIDTH Tj = 150C
VSD, Source-to-Drain Voltage (V)
VSD, Source-to-Drain Voltage (V)
Fig 3. Typical Reverse Output Characteristics
Fig 4. Typical Reverse Output Characteristics
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IRF7807D2
2000
1600
VGS, Gate-to-Source Voltage (V)
VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd
6
ID = 7.0A VDS = 16V
C, Capacitance (pF)
4
1200
Ciss Coss
800
2
400
Crss
0 1 10 100
0 0 4 8 12
VDS , Drain-to-Source Voltage (V)
QG, Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
2.0
100
RDS(on) , Drain-to-Source On Resistance
ID = 7.0A
ID, Drain-to-Source Current ( )
VGS = 4.5V
T J = 25C
1.5
(Normalized)
T J = 150C
1.0
0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160
10 2.5
VDS = 10V 380s PULSE WIDTH
3.0 3.5
T J, Junction Temperature (C )
VGS, Gate-to-Source Voltage (V)
Fig 7. Normalized On-Resistance Vs. Temperature
Fig 8. Typical Transfer Characteristics
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IRF7807D2
RDS(on) , Drain-to -Source On Resistance ( )
R DS (on) , Drain-to-Source On Resistance ) (
0.05
0.024
0.04
0.022
VGS = 4.5V
0.020
0.03
0.02
ID = 7.0A
VGS = 10V
0.018
0.01 2.0 4.0 6.0 8.0 10.0
0.016 0 20 40 60 80
VGS, Gate -to -Source Voltage (V)
I D , Drain Current (A)
Fig 9. On-Resistance Vs. Gate Voltage
Fig 10. On-Resistance Vs. Drain Current
100
Thermal Response (Z thJA )
D = 0.50 0.20 0.10 0.05 0.02 0.01 1 P DM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.01 0.1 1 10 100
10
SINGLE PULSE (THERMAL RESPONSE)
0.1 0.001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient (MOSFET)
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IRF7807D2
Mosfet, Body Diode & Schottky Diode Characteristics
100
100
Tj = 150C
Reverse Current - I R ( mA )
10
125C
1
100C 75C
Tj = 125C Tj = 25C
Instantaneous Forward Current - I F ( A )
0.1
50C
10
0.01
25C
0.001 0 5 10 15 20 25 30
Reverse Voltage - VR (V)
1
Fig. 13 - Typical Values of Reverse Current Vs. Reverse Voltage
0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 Forward Voltage Drop - V SD ( V )
Fig. 12 - Typical Forward Voltage Drop Characteristics
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IRF7807D2
SO-8 Package Details
Part Marking
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IRF7807D2
Tape and Reel
T E R M IN A L N U M B E R 1
12 .3 ( .48 4 ) 11 .7 ( .46 1 )
8 .1 ( .31 8 ) 7 .9 ( .31 2 )
F E E D D IR E C T IO N
NOTES: 1 . C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R . 2 . A L L D IM E N S IO N S A R E S H O W N IN M IL L IM E TE R S (IN C H E S ). 3 . O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1.
33 0.00 (12 .9 92 ) MAX.
14 .4 0 ( .5 66 ) 12 .4 0 ( .4 88 ) NO TES : 1. C O N T R O LL IN G D IM E N S IO N : M IL L IM E T E R . 2. O U T L IN E C O N F O R M S T O E IA -48 1 & E IA -54 1.
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 Data and specifications subject to change without notice. 11/99
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