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 PN2907A
Preferred Device
General Purpose Transistor
PNP Silicon
http://onsemi.com MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD 625 5.0 PD 1.5 12 TJ, Tstg -55 to +150 Watts mW/C C 1 2 Unit C/W C/W 3 mW mW/C Value -60 -60 -5.0 -600 Unit Vdc Vdc Vdc mAdc 2 BASE 1 EMITTER COLLECTOR 3
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RJA RJC Max 200 83.3
TO-92 CASE 29 STYLE 1
MARKING DIAGRAM
PN2 907A YWW
PN2907A = Device Code Y = Year WW = Work Week
ORDERING INFORMATION
Device PN2907A PN2907ARLRA Package TO-92 TO-92 Shipping 5000 Units/Box 2000/Tape & Reel
Preferred devices are recommended choices for future use and best overall value.
(c) Semiconductor Components Industries, LLC, 2001
1
August, 2001 - Rev. 0
Publication Order Number: PN2907A/D
PN2907A
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (Note 1.) (IC = -10 mAdc, IB = 0) Collector-Base Breakdown Voltage (IC = -10 mAdc, IE = 0) Emitter-Base Breakdown Voltage (IE = -10 mAdc, IC = 0) Collector Cutoff Current (VCE = -30 Vdc, VEB(off) = -0.5 Vdc) Collector Cutoff Current (VCB = -50 Vdc, IE = 0) (VCB = -50 Vdc, IE = 0, TA = 150C) Base Current (VCE = -30 Vdc, VEB(off) = -0.5 Vdc) V(BR)CEO V(BR)CBO V(BR)EBO ICEX ICBO - - IB - -0.01 -10 -50 nAdc -60 -60 -5.0 - - - - -50 Vdc Vdc Vdc nAdc Adc
ON CHARACTERISTICS
DC Current Gain (IC = -0.1 mAdc, VCE = -10 Vdc) (IC = -1.0 mAdc, VCE = -10 Vdc) (IC = -10 mAdc, VCE = -10 Vdc) (IC = -150 mAdc, VCE = -10 Vdc) (Note 1.) (IC = -500 mAdc, VCE = -10 Vdc) (Note 1.) Collector-Emitter Saturation Voltage (Note 1.) (IC = -150 mAdc, IB = -15 mAdc) (IC = -500 mAdc, IB = -50 mAdc) Base-Emitter Saturation Voltage (Note 1.) (IC = -150 mAdc, IB = -15 mAdc) (IC = -500 mAdc, IB = -50 mAdc) hFE 75 100 100 100 50 VCE(sat) - - VBE(sat) - - -1.3 -2.6 -0.4 -1.6 Vdc - - - 300 - Vdc -
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product (Notes 1. and 2.), (IC = -50 mAdc, VCE = -20 Vdc, f = 100 MHz) Output Capacitance (VCB = -10 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = -2.0 Vdc, IC = 0, f = 1.0 MHz) fT Cobo Cibo 200 - - - 8.0 30 MHz pF pF
SWITCHING CHARACTERISTICS
Turn-On Time Delay Time Rise Time Turn-Off Time Storage Time Fall Time 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%. 2. fT is defined as the frequency at which |hfe| extrapolates to unity. (VCC = -6.0 Vdc, IC = -150 mAdc, IB1 = IB2 = 15 mAdc) (Figure 2) Ad ) (Fi (VCC = -30 Vdc, IC = -150 mAdc, IB1 = -15 mAdc) (Figures 1 and 5) 15 Ad ) (Fi d ton td tr toff ts tf - - - - - - 45 10 40 100 80 30 ns ns ns ns ns ns
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PN2907A
INPUT Zo = 50 PRF = 150 PPS RISE TIME 2.0 ns P.W. < 200 ns 0 -16 V 200 ns 50 1.0 k -30 V 200 TO OSCILLOSCOPE RISE TIME 5.0 ns
Figure 1. Delay and Rise Time Test Circuit
INPUT Zo = 50 PRF = 150 PPS RISE TIME 2.0 ns P.W. < 200 ns 0 -30 V 200 ns
+15 V
-6.0 V 37 TO OSCILLOSCOPE RISE TIME 5.0 ns
1.0 k 1.0 k 50 1N916
Figure 2. Storage and Fall Time Test Circuit
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PN2907A
TYPICAL CHARACTERISTICS
3.0 hFE , NORMALIZED CURRENT GAIN 2.0
VCE = -1.0 V VCE = -10 V
TJ = 125C 25C
1.0 0.7 0.5 0.3 0.2 -0.1 -0.2 -0.3 -0.5 -0.7 -1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 -70 -100 -200 -300 -500 -55C
IC, COLLECTOR CURRENT (mA)
Figure 3. DC Current Gain
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
-1.0 -0.8 -0.6 -0.4 -0.2 0 -0.005
IC = -1.0 mA
-10 mA
-100 mA
-500 mA
-0.01
-0.02 -0.03 -0.05 -0.07 -0.1
-0.2 -0.3 -0.5 -0.7 -1.0 IB, BASE CURRENT (mA)
-2.0
-3.0
-5.0 -7.0 -10
-20 -30
-50
Figure 4. Collector Saturation Region
300 200 100 70 50 30 20 10 7.0 5.0 3.0 -5.0 -7.0 -10 -20 -30 -50 -70 -100 IC, COLLECTOR CURRENT td @ VBE(off) = 0 V tr
500 VCC = -30 V IC/IB = 10 TJ = 25C t, TIME (ns) 300 200 100 70 50 30 20 2.0 V -200 -300 -500 10 7.0 5.0 -5.0 -7.0 -10 ts = ts - 1/8 tf tf VCC = -30 V IC/IB = 10 IB1 = IB2 TJ = 25C
t, TIME (ns)
-20 -30 -50 -70 -100 -200 -300 -500 IC, COLLECTOR CURRENT (mA)
Figure 5. Turn-On Time
Figure 6. Turn-Off Time
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PN2907A
TYPICAL SMALL-SIGNAL CHARACTERISTICS
NOISE FIGURE VCE = 10 Vdc, TA = 25C
10 8.0 6.0 4.0 2.0 0 0.01 0.02 0.05 0.1 0.2 IC = -1.0 mA, Rs = 430 -500 A, Rs = 560 -50 A, Rs = 2.7 k -100 A, Rs = 1.6 k Rs = OPTIMUM SOURCE RESISTANCE NF, NOISE FIGURE (dB) 10 f = 1.0 kHz NF, NOISE FIGURE (dB) 8.0 6.0 4.0 2.0 0
IC = -50 A -100 A -500 A -1.0 mA
0.5 1.0 2.0
5.0 10
20
50
100
50
100
200
500 1.0 k 2.0 k
5.0 k 10 k
20 k
50 k
f, FREQUENCY (kHz)
Rs, SOURCE RESISTANCE (OHMS)
Figure 7. Frequency Effects
BANDWIDTH PRODUCT (MHz)
Figure 8. Source Resistance Effects
30 20 C, CAPACITANCE (pF) Ceb
400 300 200
10 7.0 5.0 3.0 2.0 -0.1 -0.2 -0.3 -0.5 -1.0 -2.0 -3.0 -5.0 -10 -20 -30 Ccb
100 80 60 40 30 20 -1.0 -2.0
f T, CURRENT-GAIN
VCE = -20 V TJ = 25C
-5.0
-10
-20
-50
-100 -200
-500 -1000
REVERSE VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mA)
Figure 9. Capacitances
Figure 10. Current-Gain -- Bandwidth Product
-1.0 TJ = 25C -0.8 V, VOLTAGE (VOLTS) -0.6 -0.4 -0.2 VCE(sat) @ IC/IB = 10 0 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -500 VBE(sat) @ IC/IB = 10 COEFFICIENT (mV/ C) VBE(on) @ VCE = -10 V
+0.5 0 -0.5 -1.0 -1.5 -2.0 -2.5 -0.1 -0.2 -0.5 -1.0 -2.0 RqVB for VBE -5.0 -10 -20 -50 -100 -200 -500 RqVC for VCE(sat)
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 11. "On" Voltage
Figure 12. Temperature Coefficients
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PN2907A
PACKAGE DIMENSIONS TO-92 TO-226AA CASE 29-11 ISSUE AL
A R P L
SEATING PLANE
B
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --0.250 --0.080 0.105 --0.100 0.115 --0.135 --MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --6.35 --2.04 2.66 --2.54 2.93 --3.43 ---
K
XX G H V
1
D J C SECTION X-X N N
DIM A B C D G H J K L N P R V
STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR
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PN2907A
Notes
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PN2907A
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
PUBLICATION ORDERING INFORMATION
Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: ONlit@hibbertco.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada JAPAN: ON Semiconductor, Japan Customer Focus Center 4-32-1 Nishi-Gotanda, Shinagawa-ku, Tokyo, Japan 141-0031 Phone: 81-3-5740-2700 Email: r14525@onsemi.com ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative.
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PN2907A/D


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