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| TLP331,TLP332 TOSHIBA Photocoupler GaAs Ired & Photo-Transistor TLP331,TLP332 Office Machine Household Use Equipment Programmable Controllers AC / DC-Input Module Telecommunication The TOSHIBA TLP331 and TLP332 consists of a gallium arsenide infrared emitting diode optically coupled to a photo-transistor in a six lead plastic DIP package. This photocoupler provides the unique feature of high current transfer ratio at both low output voltage and low input current. This makes it ideal for use in low power logic circuits, telecommunications equipment and portable electronics isolation applications. TLP332 is no-base internal connection for high-EMI environments. * * * * Collector-emitter voltage: 55V (min.) Isolation voltage: 5000Vrms (min.) UL recognized: UL1577, file no. E67349 Current transfer ratio Classification (*) Rank BV Standard Current Transfer Ratio (min.) Ta = 25C Ta = -25~75C IF = 0.5mA IF = 1mA IF = 1mA VCE = 0.5V VCE = 1.5V VCE = 0.5V 200% 100% 100% 50% 100% 50% Marking Of ClassiFication BV BV, blank 1 Unit in mm TOSHIBA Weight: 0.4 g 11-7A8 Pin Configurations(top view) TLP331 6 1 TLP332 6 (*) Ex. Standard: TLP331 Rank BV: TLP331(BV) 2 5 2 5 (Note) Application type name for certification test, please use standard product type name, i.e. TLP331(BV): TLP331 3 1: ANODE 2: CATHODE 3: NC 4: EMITTER 5: COLLECTOR 6: BASE 4 3 1: ANODE 2: CATHODE 3: NC 4: EMITTER 5: COLLECTOR 6: NC 4 1 2002-09-25 TLP331,TLP332 Maximum Ratings (Ta = 25C) Characteristic Forward current Forward current derating (Ta 39C) LED Peak forward current (100s pulse, 100pps) Reverse Voltage Junction temperature Collector-emitter voltage Collector-base voltage (TLP331) Emitter-collector voltage Detector Emitter-base voltage (TLP331) Collector current Power dissipation Power dissipation derating (Ta 25C) Junction temperature Storage temperature range Operating temperature range Lead soldering temperature (10s) Total package power dissipation Total package power dissipation derating (Ta25C) Isolation voltage (AC, 1min., RH 60%) (Note 1) Symbol IF IF /C IFP VR Tj VCEO VCBO VECO VEBO IC PC PC / C Tj Tstg Topr Tsol PT PT/C BVS Rating 50 -0.7 1 5 125 55 80 7 7 50 150 -1.5 125 -55~125 -55~100 260 250 -2.5 5000 Unit mA mA / C A V C V V V V mA mW mW / C C C C C mW mW / C Vrms (Note 1) Device considered a two terminal device: Pins 1, 2 and 3 shorted together and pins 4, 5 and 6 shorted together. Recommended Operating Conditions Characteristic Supply voltage Forward current Collector current Operating temperature Symbol VCC IF IC Topr Min. -- -25 Typ. 5 1.6 1 Max. 25 25 10 75 Unit V mA mA C 2 2002-09-25 TLP331,TLP332 Individual Electrical Characteristics (Ta = 25C) Characteristic Forward voltage LED Reverse current Capacitance Collector-emitter breakdown voltage Emitter-collector breakdown voltage Collector-base breakdown voltage (TLP331) Emitter-base breakdown voltage (TLP331) Collector dark current Collector dark current (TLP331) Collector dark current (TLP331) DC forward current gain (TLP331) Capacitance (collector to emitter) Symbol VF IR CT Test Condition IF = 10mA VR = 5V V = 0, f = 1MHz Min. 1.0 55 7 80 7 Typ. 1.15 30 10 2 0.5 0.1 1000 12 Max. 1.3 10 100 50 10 Unit V A pF V V V V nA A A nA pF V(BR)CEO IC = 0.5mA V(BR)ECO IE = 0.1mA V(BR)CBO IC = 0.1mA V(BR)EBO IE = 0.1mA ICEO ICER ICBO hFE CCE VCE = 24V VCE = 24V, Ta = 85C VCE = 24V, Ta = 85C RBE = 1M VCB = 10V VCE = 5V, IC = 0.5mA V = 0 , f = 1MHz Coupled Electrical Characteristics (Ta = 25C) Characteristic Current transfer ratio Symbol IC / IF Test Condition IF = 1mA, VCE = 0.5V Rank BV IF = 0.5mA, VCE = 1.5V Rank BV IF = 1mA, VCB = 5V IC = 0.5mA IF = 1mA Collector-emitter saturation voltage VCE(sat) IC = 1mA IF = 1mA Rank BV Min. 100 200 50 100 Typ. 10 -- 0.2 Max. 1200 1200 0.4 0.4 V Unit % Detector Low input CTR Base photo-current (TLP331) IC / IF(low) IPB % A Coupled Electrical Characteristics (Ta = 25~75C) Characteristic Current transfer ratio Symbol IC / IF Test Condition IF = 1mA, VCE = 0.5V Rank BV IF = 0.5mA, VCE = 1.5V Rank BV Min. 50 100 Typ. 50 100 Max. Unit % Low input CTR IC / IF(low) % 3 2002-09-25 TLP331,TLP332 Isolation Characteristics (Ta = 25C) Characteristic Capacitance (input to output) Isolation resistance Symbol CS RS Test Condition VS = 0, f = 1MHz V = 500V AC, 1 minute Isolation voltage BVS AC, 1 second, in oil DC, 1 minute, in oil Min. 510 10 Typ. 0.8 10 14 Max. Unit pF Vrms Vdc 5000 10000 10000 Switching Characteristics (Ta = 25C) Characteristic Rise time Fall time Turn-on time Turn-off time Turn-on time Storage time Turn-off time Turn-on time Storage time Turn-off time Symbol tr tf ton toff tON tS tOFF tON tS tOFF (Fig.1) RL = 4.7k RBE = OPEN VCC = 5V, IF = 1.6mA (Fig.1) RL = 4.7k RBE = 470k (TLP331) VCC = 5V, IF = 1.6mA VCC = 10V IC = 2mA RL = 100 Test Condition Min. Typ. 8 8 10 8 10 50 300 12 30 100 Max. s s s Unit Fig. 1 Switching time test circuit IF RL VCC VCE IF tS VCE 4.5V 0.5V tOFF VCC RBE tON 4 2002-09-25 TLP331,TLP332 IF - Ta 100 200 PC - Ta Allowable forward current IF (mA) Allowable collector power Dissipation PC (mW) 0 20 40 60 80 100 120 80 160 60 120 40 80 20 40 0 -20 0 -20 0 20 40 60 80 100 120 Ambient temperature Ta (C) Ambient temperature Ta (C) IFP - DR 5000 3000 Pulse width100s Ta = 25C 1000 500 300 1000 500 300 Ta = 25C IF - VF (mA) IFP (mA) Forward current IF 10-3 10-2 10-1 100 100 50 30 10 5 3 1 0.6 Pulse forward current 100 50 30 10 3 3 3 3 0.8 1.0 1.2 1.4 1.6 1.8 DUTY CYCLE RATIO DR Forward voltage VF (V) VF/Ta - IF -3.2 1000 500 IFP - VFP Forward voltage temperature Coefficient VF / Ta (mV/C) (mA) IFP Pulse forward current -2.8 -2.4 -2.0 -1.6 -1.2 -0.8 -0.4 0.1 300 100 50 30 10 5 3 1 0.6 Pulse width10s Repetitive frequency = 100Hz Ta = 25C 0.3 0.5 1 3 5 10 30 50 1.0 1.4 1.8 2.2 2.6 Forward current IF (mA) Pulse forward voltage VFP (V) 5 2002-09-25 TLP331,TLP332 IC/IF - IF 1000 4.0 Ta = 25C IC - VCE IF=1.0mA 500 3.5 (%) IC/IF 300 3.0 Current transfer ratio (mA) 100 50 30 Ta = 25C VCE = 5V VCE = 1.5V VCE = 0.5V 0.8mA 2.5 Collector current IC 2.0 0.6mA 1.5 0.5mA 10 0.1 0.3 0.5 1 3 5 10 1.0 0.4mA Forward current IF (mA) 0.5 0.2mA IC - IF 50 30 Ta = 25C VCE = 5V VCE = 1.5V VCE = 0.5V 30 10 IF=2mA 10 0 0.1 0.3 0.5 1 3 5 10 Collector-emitter voltage VCE (V) IC - Ta VCE = 1.5V VCE = 0.5V 5 3 (mA) 5 1mA (mA) IC 3 1 Collector current IC 0.5 0.3 Collector current 0.5mA 1 0.5 0.3 0.1 0.2mA 0.05 0.03 0.1 0.05 0.01 0.1 0.03 0.3 0.5 1 3 5 10 -20 0 20 40 60 80 100 Forward current IF (mA) Ambient temperature Ta (C) 6 2002-09-25 TLP331,TLP332 ID - Ta 101 VCE=24V 10V 10 0 Switching Time - RL 5000 3000 Ta = 25C IF = 1.6mA VCC = 5V 5V 1000 Collector dark current ID(ICEO) (A) 500 10-1 300 10-2 Switching time (s) tOFF 100 50 30 tS 10-3 tON 10-4 10 5 10-5 0 3 1 20 40 60 80 100 120 3 5 10 30 50 100 Ambient temperature Ta (C) Load resistance RL (k) 7 2002-09-25 TLP331,TLP332 RESTRICTIONS ON PRODUCT USE 000707EBC * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with domestic garbage. * The products described in this document are subject to the foreign exchange and foreign trade laws. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice. 8 2002-09-25 |
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