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(R)
TN12, TS12 and TYNx12 Series
12A SCRs
SENSITIVE & STANDARD
MAIN FEATURES:
Symbol IT(RMS) V DRM/VRRM IGT Value 12 600 to 1000 0.2 to 15 Unit A
A
G
A
K
V mA
KA G
KA G
A
DESCRIPTION Available either in sensitive (TS12) or standard (TYN, TN12...) gate triggering levels, the 12A SCR series is suitable to fit all modes of control found in applications such as overvoltage crowbar protection, motor control circuits in power tools and kitchen aids, in-rush current limiting circuits, capacitive discharge ignition, voltage regulation circuits... Available in though-hole or surface-mount packages, they provide an optimized performance in a limited space area. ABSOLUTE RATINGS (limiting values)
Symbol IT(RMS) IT (AV) Parameter RMS on-state current (180 conduction angle) Average on-state current (180 conduction angle)
DPAK (TS12-B) (TN12-B)
A
D 2PAK (TN12-G)
A
K
A
G
K
A
IPAK (TS12-H) (TN12-H)
G
TO-220AB (TYN)
Value Tc = 105C Tc = 105C DPAK / IPAK 12 8 D PAK / TO-220AB 146 140 98 50 4 1 - 40 to + 150 - 40 to + 125 5
Unit A A
ITSM It dI/dt IGM PG(AV) Tstg Tj VRGM
Non repetitive surge peak on-state current I t Value for fusing Critical rate of rise of on-state current IG = 2 x IGT , tr 100 ns Peak gate current Average gate power dissipation Storage junction temperature range Operating junction temperature range
tp = 8.3 ms tp = 10 ms tp = 10 ms F = 60 Hz tp = 20 s
Tj = 25C Tj = 25C Tj = 125C Tj = 125C Tj = 125C
115 110 60
A AS A/s A W C V
Maximum peak reverse gate voltage (for TN12 & TYN)
September 2000 - Ed: 3
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TN12, TS12 and TYNx12 Series
ELECTRICAL CHARACTERISTICS (Tj = 25C, unless otherwise specified)
s
SENSITIVE
Symbol IGT VGT VGD VRG IH IL dV/dt VTM Vt0 Rd IDRM IRRM VD = VDRM IRG = 10 A IT = 50 mA IG = 1 mA RGK = 1 k R GK = 1 k RGK = 220 Tj = 125C Tj = 25C Tj = 125C Tj = 125C Tj = 25C Tj = 125C tp = 380 s RL = 3.3 k R GK = 1 k Tj = 125C VD = 12 V RL = 140 Test Conditions MAX. MAX. MIN. MIN. MAX. MAX. MIN. MAX. MAX. MAX. MAX. TS1220 200 0.8 0.1 8 5 6 5 1.6 0.85 30 5 2 Unit A V V V mA mA V/s V V m A mA
VD = 67 % VDRM ITM = 24 A
Threshold voltage Dynamic resistance VDRM = VRRM RGK = 220
s
STANDARD
TN1215 Symbol IGT VD = 12 V VGT VGD IH IL dV/dt VTM Vt0 Rd IDRM IRRM VD = VDRM IT = 500 mA IG = 1.2 IGT VD = 67 % VDRM ITM = 24 A Gate open Tj = 125C Tj = 25C Tj = 125C Tj = 125C Tj = 25C Tj = 125C tp = 380 s RL = 3.3 k Gate open Tj = 125C RL = 33 Test Conditi ons B/H MIN. MAX. MAX. MIN. MAX. MAX. MIN. MAX. MAX. MAX. MAX. 40 80 200 1.6 0.85 30 5 2 30 60 2 15 1.3 0.2 15 30 40 30 60 200 G x12T 0.5 5 x12 2 15 V V mA mA V/s V V m A mA mA TYN Unit
Threshold voltage Dynamic resistance VDRM = VRRM
THERMAL RESISTANCES
Symbol Rth(j-c) R th(j-a) Junction to case (DC) Junction to ambient TO-220AB IPAK S = 1 cm S = 0.5 cm
S = Copper surface under tab
Parameter
Value 1.3 60 100 45 70
Unit C/W C/W
D PAK DPAK
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TN12, TS12 and TYNx12 Series
PRODUCT SELECTOR
Part Number 600 V TN1215-xxxB TN1215-xxxG TN1215-xxxH TS1220-xxxB TS1220-xxxH TYNx12 TYNx12T X X X X X X X X X X X X X Voltage (xxx) 700 V 800 V X X X X 1000 V 15 mA 15 mA 15 mA 0.2 mA 0.2 mA 30 mA 15 mA DPAK D PAK IPAK DPAK IPAK TO-220AB TO-220AB Sensitivity Package
ORDERING INFORMATION
TN 12 15 - 600 B (-TR)
STANDARD SCR SERIES CURRENT: 12A SENSITIVITY: 15: 15mA VOLTAGE: 600: 600V 800: 800V 1000: 1000V PACKAGE: B: DPAK H: IPAK 2 G: D PAK PACKING MODE: Blank: Tube 2 -TR: D PAK & DPAK Tape & Reel
TS 12 20 - 600 B (-TR)
SENSITIVE SCR SERIES CURRENT: 12A SENSITIVITY: 20: 200A VOLTAGE: 600: 600V 700: 700V PACKAGE: B: DPAK H: IPAK PACKING MODE: Blank: Tube -TR: DPAK Tape & Reel
TYN
STANDARD SCR SERIES VOLTAGE: 600: 600V 800: 800V 1000: 1000V
6
12
T
SENSITIVITY: Blank: 30mA T: 15mA
CURRENT: 12A
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TN12, TS12 and TYNx12 Series
OTHER INFORMATION
Part Number TN1215-x00B TN1215-x00B-TR TN1215-x00G TN1215-x00G-TR TN1215-x00H TS1220-x00B TS1220-x00B-TR TS1220-x00H TYNx12 TYNx12RG TYNx12T TYNx12TRG
Note: x = voltage
Marking TS1215x00 TS1215x00 TS1215x00G TS1215x00G TN1215x00 TS1220x00 TS1220x00 TS1220x00 TYNx12 TYNx12 TYNx12T TYNx12T
Weight 0.3 g 0.3 g 1.5 g 1.5 g 0.4 g 0.3 g 0.3 g 0.4 g 2.3 g 2.3 g 2.3 g 2.3 g
Base Quantity 75 2500 50 1000 75 75 2500 75 250 50 250 50
Packing mode Tube Tape & reel Tube Tape & reel Tube Tube Tape & reel Tube Bulk Tube Bulk Tube
Fig. 1: Maximum average power dissipation versus average on-state current.
P(W) 12 11 10 9 8 7 6 5 4 3 2 1 0
= 180
Fig. 2-1: Average and D.C. on-state current versus case temperature.
IT(av)(A) 14 12 10 8 6
DC
= 180
360
4 2 8 9 0 0 25 Tcase(C) 50 75 100 125
IT(av)(A) 0 1 2 3 4 5 6
7
Fig. 2-2: Average and D.C. on-state current versus ambient temperature (device mounted on FR4 with recommended pad layout) (DPAK and D2PAK).
IT(av)(A) 3.0 2.5 2.0 1.5 1.0 0.5 0.0 Tamb(C) 0 25 50 75 100 125
= 180 DPAK DC D 2PAK
Fig. 3-1: Relative variation of thermal impedance junction to case versus pulse duration.
K = [Zth(j-c)/Rth(j-c)] 1.0
0.5
0.2 tp(s) 0.1 1E-3 1E-2 1E-1 1E+0
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TN12, TS12 and TYNx12 Series
Fig. 3-2: Relative variation of thermal impedance junction to ambient versus pulse duration (recommended pad layout, FR4 PC board).
K = [Zth(j-a)/Rth(j-a)] 1.00
Fig. 4-1: Relative variation of gate trigger current, holding current and latching versus junction temperature for TS12 series.
IGT,IH,IL [Tj] / IGT,IH,IL [Tj = 25C] 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -40
IGT
DPAK D2PAK
0.10
TO-220AB
IH & IL Rgk = 1k
tp(s) 0.01 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2
Tj(C) -20 0 20 40 60 80 100 120 140
Fig. 4-2: Relative variation of gate trigger current, holding current and latching current versus junction temperature for TN12 & TYN series.
IGT,IH,IL [Tj] / IGT,IH,IL [Tj = 25C] 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -40
Fig. 5: Relative variation of holding current versus gate-cathode resistance (typical values) for TS12 series.
IGT
IH & IL
Tj(C) -20 0 20 40 60 80 100 120 140
IH[Rgk] / IH[Rgk = 1k] 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 Rgk(k) 0.0 1E-2 1E-1 1E+0
Tj = 25C
1E+1
Fig. 6: Relative variation of dV/dt immunity versus gate-cathode resistance (typical values) for TS12 series.
10.0 dV/dt[Rgk] / dV/dt [Rgk = 220]
Tj = 125C VD = 0.67 x VDRM
Fig. 7: Relative variation of dV/dt immunity versus gate-cathode capacitance (typical values) for TS12 series.
dV/dt[Cgk] / dV/dt [Rgk = 220]
VD = 0.67 x VDRM Tj = 125C Rgk = 220
4.0 3.5 3.0 2.5
1.0
2.0 1.5 1.0
Rgk(k) 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2
0.5 0.0 0 25 50
Cgk(nF) 75 100 125 150
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TN12, TS12 and TYNx12 Series
Fig. 8: Surge peak on-state current versus number of cycles (TS12/TN12/TYN).
dV/dt[Rgk] / dV/dt [Rgk = 220]
Tj = 125C VD = 0.67 x VDRM
Fig. 9: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10 ms, and corresponding values of I t.
ITSM(A),I2t(A2s) 2000 1000
ITSM TYN/TN12 dI/dt limitattion TS12 TYN/TN12 I2t TS12 Tjinitial=25C
10.0
1.0
100
Rgk(k) 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2
10 0.01 0.10
tp(ms) 1.00 10.00
Fig. 10: On-state characteristics (maximum values).
Fig. 11: Thermal resistance junction to ambient versus copper surface under tab (Epoxy printed circuit board FR4, copper thickness: 35 m) .
Rth(j-a)(C/W) 100 80 60
ITM(A) 200 100
Tj max.: Vto = 0.85V Rd = 30m
Tj = Tjmax.
DPAK
10
Tj = 25C
40
D 2PAK
20 VTM(V) 1 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 S(cm2) 0 0 2 4 6 8 10 12 14 16 18 20
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TN12, TS12 and TYNx12 Series
PACKAGE MECHANICAL DATA DPAK (Plastic)
DIMENSIONS REF. Millimeters Min. A A1 A2 B B2 C C2 D E G H L2 L4 R V2 Max Min. Inches Max.
R
R
2.20 2.40 0.90 1.10 0.03 0.23 0.64 0.90 5.20 5.40 0.45 0.60 0.48 0.60 6.00 6.20 6.40 6.60 4.40 4.60 9.35 10.10 0.80 typ. 0.60 1.00 0.2 typ. 0 8
0.086 0.094 0.035 0.043 0.001 0.009 0.025 0.035 0.204 0.212 0.017 0.023 0.018 0.023 0.236 0.244 0.251 0.259 0.173 0.181 0.368 0.397 0.031 typ. 0.023 0.039 0.007 typ. 0 8
FOOTPRINT DIMENSIONS (in millimeters) DPAK (Plastic)
6.7
6.7
3 3 1.6 2.3 2.3 1.6
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TN12, TS12 and TYNx12 Series
PACKAGE MECHANICAL DATA D2PAK (Plastic)
DIMENSIONS
A E L2 C2
REF.
Millimeters Min. Typ. Max. 4.60 2.69 0.23 0.93 Min.
Inches Typ. Max. 0.181 0.106 0.009 0.037 0.055 0.024 0.054 0.368 0.405 0.208 0.624 0.055 0.069 0.016 8 0 8
D L L3 A1 B2 B G A2 2.0 MIN. FLAT ZONE V2 C R
A A1 A2 B B2 C C2 D E G L L2 L3 R V2
4.30 2.49 0.03 0.70 1.25 0.45 1.21 8.95 10.00 4.88 15.00 1.27 1.40
1.40
0.169 0.098 0.001 0.027 0.048 0.60 0.017 1.36 0.047 9.35 0.352 10.28 0.393 5.28 0.192 15.85 0.590 1.40 0.050 1.75 0.055
0.40 0
FOOTPRINT DIMENSIONS (in millimeters) D2PAK (Plastic)
16.90
10.30 1.30
5.08
3.70 8.90
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TN12, TS12 and TYNx12 Series
PACKAGE MECHANICAL DATA IPAK (Plastic)
DIMENSIONS REF. Millimeters Min.
A E B2 L2 C2
Inches Min. 0.086 0.035 0.027 0.025 0.204 0.035 Typ. Max. 0.094 0.043 0.051 0.035 0.212 0.033 0.037 0.023 0.023 0.244 0.260 0.181 0.641 0.370 0.047 0.031 0.039 10
Typ.
Max. 2.4 1.1 1.3 0.9 5.4 0.85
D
H L
L1
B6
B3 B V1 A1
B5 G
C A3
A A1 A3 B B2 B3 B5 B6 C C2 D E G H L L1 L2 V1
2.2 0.9 0.7 0.64 5.2 0.3 0.45 0.48 6 6.4 4.4 15.9 9 0.8 0.8 10
0.95 0.6 0.6 6.2 6.6 4.6 16.3 9.4 1.2 1
0.017 0.019 0.236 0.252 0.173 0.626 0.354 0.031
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TN12, TS12 and TYNx12 Series
PACKAGE MECHANICAL DATA TO-220AB (Plastic)
DIMENSIONS
B b2 C
REF.
Millimeters Min. Typ. 3.75 13.00 14.00 0.511 10.00 10.40 0.393 0.61 0.88 0.024 1.23 1.32 0.048 4.40 4.60 0.173 0.49 0.70 0.019 2.40 2.72 0.094 2.40 2.70 0.094 6.20 6.60 0.244 3.75 3.85 0.147 15.80 16.40 16.80 0.622 2.65 2.95 0.104 1.14 1.70 0.044 1.14 1.70 0.044 2.60 Max. Min.
Inches Typ. 0.147 0.551 0.409 0.034 0.051 0.181 0.027 0.107 0.106 0.259 0.151 0.646 0.661 0.116 0.066 0.066 0.102 Max. 0.625
L F I A
l4
a1
c2
l3 l2 a2
b1 e
M c1
A a1 a2 B b1 b2 C c1 c2 e F I I4 L l2 l3 M
15.20
15.90 0.598
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. (c) The ST logo is a registered trademark of STMicroelectronics (c) 2000 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Swit zerland - United Kingdom http ://www.st.com
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