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| DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ493 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION PART NUMBER 2SJ493 PACKAGE Isolated TO-220 DESCRIPTION This product is P-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES * Super low on-state resistance RDS(on)1 = 100 m (MAX.) (VGS = -10 V, ID = -8 A) RDS(on)2 = 185 m (MAX.) (VGS = -4 V, ID = -8 A) * Low Ciss: Ciss = 1210 pF (TYP.) * Built-in gate protection diode ABSOLUTE MAXIMUM RATINGS (TA = 25C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (pulse) Note2 Note1 VDSS VGSS(AC) VGSS(DC) ID(DC) ID(pulse) PT PT Tch Tstg -60 # 20 V V V A A W W C C A mJ -20, 0 # 16 # 64 Total Power Dissipation (TC = 25C) Total Power Dissipation (TA = 25C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy Note3 Note3 30 2.0 150 -55 to +150 -16 25.6 IAS EAS Notes 1. f = 20 kHz, Duty Cycle 10% (+Side) 2. PW 10 s, Duty Cycle 1 % 3. Starting Tch = 25 C, RA = 25 , VGS = -20 V 0 THERMAL RESISTANCE Channel to Case Channel to Ambient Rth(ch-C) Rth(ch-A) 4.17 62.5 C/W C/W The information in this document is subject to change without notice. Document No. D11265EJ3V0DS00 (3rd edition) Date Published January 1999 NS CP(K) Printed in Japan (c) 1999 2SJ493 ELECTRICAL CHARACTERISTICS (TA = 25 C) CHARACTERISTICS Drain to Source On-state Resistance SYMBOL RDS(on)1 RDS(on)2 Gate to Source Cut-off Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS(off) | yfs | IDSS IGSS Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr TEST CONDITIONS VGS = -10 V, ID = -8 A VGS = -4 V, ID = -8 A VDS = -10 V, ID = -1 mA VDS = -10 V, ID = -8 A VDS = -60 V, VGS = 0 V VGS = # 20 V, VDS = 0 V VDS = -10 V VGS = 0 V f = 1 MHz ID = -8 A VGS(on) = -10 V VDD = -30 V RG = 10 ID = -16 A VDD = -48 V VGS = -10 V IF = 16 A, VGS = 0 V IF = 16 A, VGS = 0 V di/dt = 50 A / s 1210 520 180 15 130 95 80 42 8.0 10 1.0 120 230 -1.0 5.0 MIN. TYP. 70 120 -1.5 11 -10 # 10 MAX. 100 185 -2.0 UNIT m m V S A A pF pF pF ns ns ns ns nC nC nC V ns nC TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 PG VGS = -20 0 V BVDSS VDS 50 L VDD TEST CIRCUIT 2 SWITCHING TIME D.U.T. RL PG. RG RG = 10 VDD ID 90 % 90 % ID 0 10 % td(on) ton tr td(off) toff 10 % tf VGS VGS Wave Form 0 10 % VGS(on) 90 % IAS ID VDD VGS 0 = 1 s Duty Cycle 1 % ID Wave Form Starting Tch TEST CIRCUIT 3 GATE CHARGE D.U.T. IG = 2 mA 50 RL VDD PG. 2 Data Sheet D11265EJ3V0DS00 2SJ493 TYPICAL CHARACTERISTICS (TA = 25 C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 35 dT - Percentage of Rated Power - % PT - Total Power Dissipation - W 20 40 60 80 100 120 140 160 100 80 60 40 20 30 25 20 15 10 5 0 20 40 60 80 100 120 140 160 0 TC - Case Temperature - C TC - Case Temperature - C FORWARD BIAS SAFE OPERATING AREA -1000 -100 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE Pulsed VGS = -10 V ID - Drain Current - A -100 d ite V) Lim 10 = o S S( ID(DC) 10 RD t VG aP ( m ow s -10 er Dis 10 sip ati DC 0 m on s Lim TC = 25C ite Single Pulse d -1 -0.1 -1 -10 n) Pw = 10 ID(pulse) s 10 0 s 1 m s ID - Drain Current - A -80 -60 -40 -20 -4 -8 -4 V -100 0 -12 -16 VDS - Drain to Source Voltage - V VDS - Drain to Source Voltage - V FORWARD TRANSFER CHARACTERISTICS -1000 Tch = -25C 25C 125C Pulsed ID - Drain Current - A -100 -10 -1 VDS = -10 V -20 -15 0 -5 -10 VGS - Gate to Source Voltage - V Data Sheet D11265EJ3V0DS00 3 2SJ493 TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 rth(t) - Transient Thermal Resistance - C/W 100 Rth(ch-a)= 62.5 C/W 10 Rth(ch-c)= 4.17 C/W 1 0.1 0.01 Single Pulse 0.001 10 100 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s | yfs | - Forward Transfer Admittance - S 100 VDS = -10 V Pulsed Tch = -25C 25C 75C 125C RDS(on) - Drain to Source On-State Resistance - FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 0.3 Pulsed 10 0.2 ID = -10 A 0.1 1 0.1 -0.1 -1.0 -10 -100 0 -5 -10 -15 ID - Drain Current - A VGS - Gate to Source Voltage - V RDS(on) - Drain to Source On-State Resistance - DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT GATE TO SOURCE CUTOFF VOLTAGE vs. CHANNEL TEMPERATURE VGS(off) - Gate to Source Cutoff Voltage - V 0.15 VGS = -4 V 0.10 Pulsed -2.0 VDS = -10 V ID = -1 mA -1.5 -1.0 0.05 VGS = -10 V -0.5 0 -1 -10 ID - Drain Current - A -100 0 -50 0 50 100 150 Tch - Channel Temperature - C 4 Data Sheet D11265EJ3V0DS00 2SJ493 RDS(on) - Drain to Source On-State Resistance - DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 0.24 -100 SOURCE TO DRAIN DIODE FORWARD VOLTAGE Pulsed ISD - Diode Forward Current - A VGS = -4 V 0.18 -10 V VGS = -4 V -10 VGS = 0 0.12 -1 0.06 ID = -10 A -50 0 50 100 150 -0.1 0 1 2 3 0 Tch - Channel Temperature - C VSD - Source to Drain Voltage - V CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10000 SWITCHING CHARACTERISTICS 1000 Ciss, Coss, Crss - Capacitance - pF td(on), tr, td(off), tf - Switching Time - ns VGS = 0 f = 1 MHz Ciss Coss td(off) 100 tf tr 10 td(on) VDD = -30 V VGS = -10 V RG = 10 1000 100 Crss 10 -0.1 -1 -10 -100 1.0 -0.1 -1 -10 -100 VDS - Drain to Source Voltage - V ID - Drain Current - A REVERSE RECOVERY TIME vs. DRAIN CURRENT 1000 VDS - Drain to Source Voltage - V -60 100 VDD = -48 V -24 V -12 V -12 -10 -8 -6 -40 10 -20 VDS 0 20 40 60 80 -4 -2 0 1 -0.1 -1 -10 -100 IF - Diode Current - A QG - Gate Charge - nC Data Sheet D11265EJ3V0DS00 VGS - Gate to Source Voltage - V trr - Reverse Recovery Time - ns di/dt = 50 A / s VGS = 0 DYNAMIC INPUT/OUTPUT CHARACTERISTICS -80 VGS ID = -16 A -14 5 2SJ493 SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD -100 160 SINGLE AVALANCHE ENERGY DERATING FACTOR IAS - Single Avalanche Current - A ID = -16 A -10 Energy Derating Factor - % 140 120 VDD = -30 V RG = 25 VGS = -20 V 0 IAS < -16 A = EAS =2 5.6 100 80 mJ -1.0 VDD = -30 V VGS = -20 V 0 -0.1 RG = 25 10 100 60 40 20 1m 10 m 0 25 50 75 100 125 150 L - Inductive Load - H Starting Tch - Starting Channel Temperature - C 6 Data Sheet D11265EJ3V0DS00 2SJ493 PACKAGE DRAWING (Unit: mm) Isolated TO-220(MP-45F) EQUIVALENT CIRCUIT 4.5 0.2 2.7 0.2 Gate Body Diode Drain 10.0 0.3 3.2 0.2 15.0 0.3 3 0.1 12.0 0.2 Gate Protection Diode Source 4 0.2 0.7 0.1 2.54 1.3 0.2 2.5 0.1 0.65 0.1 1.5 0.2 2.54 1.Gate 2.Drain 3.Source 123 Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. 13.5MIN. Data Sheet D11265EJ3V0DS00 7 2SJ493 No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. M4 96. 5 |
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