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| SEMICONDUCTOR RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM 70A, 60V, Avalanche Rated, N-Channel Enhancement-Mode Power MOSFETs Packages JEDEC STYLE TO-247 SOURCE DRAIN GATE December 1995 Features * 70A, 60V * rDS(on) = 0.014 * Temperature Compensated PSPICE Model * Peak Current vs Pulse Width Curve * UIS Rating Curve (Single Pulse) * +175oC Operating Temperature DRAIN (BOTTOM SIDE METAL) Description The RFG70N06, RFP70N06, RF1S70N06 and RF1S70N06SM are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. These transistors can be operated directly from integrated circuits. PACKAGE AVAILABILITY PART NUMBER RFG70N06 RFP70N06 RF1S70N06 RF1S70N06SM PACKAGE TO-247 TO-220AB TO-262AA TO-263AB BRAND RFG70N06 RFP70N06 F1S70N06 F1S70N06 DRAIN (FLANGE) A JEDEC TO-220AB DRAIN (FLANGE) SOURCE DRAIN GATE JEDEC TO-262AA SOURCE DRAIN GATE NOTE: When ordering use the entire part number. Add the suffix, 9A, to obtain the TO-263AB variant in tape and reel, e.g. RF1S70N06SM9A. Formerly developmental type TA49007. Symbol D JEDEC TO-263AB M A A G GATE SOURCE S DRAIN (FLANGE) Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified RFG70N06, RFP70N06 RF1S70N06, RF1S70N06SM Drain Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS Drain Gate Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Gate Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Drain Current RMS Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Single Pulse Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS Power Dissipation TC = +25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Derate above +25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TSTG, TJ 60 60 20 70 Refer to Peak Current Curve Refer to UIS Curve 150 1.0 -55 to +175 UNITS V V V A W W/oC oC CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD handling procedures. Copyright (c) Harris Corporation 1995 File Number 3206.3 3-51 Specifications RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM Electrical Specifications PARAMETER Drain-Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current TC = +25oC, Unless Otherwise Specified SYMBOL BVDSS VGS(TH) IDSS TEST CONDITIONS ID = 250A, VGS = 0V VGS = VDS, ID = 250A VDS = 60V, VGS = 0V VGS = 20V ID = 70A, VGS = 10V VDD = 30V, ID = 70A RL = 0.43, VGS = +10V RGS = 2.5 TC = +25oC TC = +150oC MIN 60 2 VGS = 0V to 20V VDD = 48V, ID = 70A, VGS = 0V to 10V RL = 0.68 VGS = 0V to 2V VDS = 25V, VGS = 0V f = 1MHz TYP 12 50 40 15 185 100 5.5 3000 900 300 MAX 4 1 50 100 0.014 125 125 215 115 6.5 1.0 80 o o UNITS V V A A nA ns ns ns ns ns ns nC nC nC pF pF pF C/W C/W Gate-Source Leakage Current On Resistance Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time Total Gate Charge Gate Charge at 10V Threshold Gate Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient IGSS rDS(ON) tON tD(ON) tR tD(OFF) tF tOFF QG(TOT) QG(10) QG(TH) CISS COSS CRSS RJC RJA Source-Drain Diode Specifications PARAMETER Forward Voltage Reverse Recovery Time SYMBOL VSD tRR TEST CONDITIONS ISD = 70A ISD = 70A, dISD/dt = 100A/s MIN TYP MAX 1.5 125 UNITS V ns 3-52 RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM Typical Performance Curves 500 ID, DRAIN CURRENT (A) TC = +25oC 2 1 ZJC, NORMALIZED THERMAL RESPONSE 100 100s 0.5 0.2 0.1 0.1 0.05 0.02 0.01 SINGLE PULSE t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC + TC 10-2 10-1 100 101 PDM 1ms 10 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) 1 1 10 VDS, DRAIN-TO-SOURCE VOLTAGE (V) 10ms 100ms VDSS MAX = 60V DC 100 0.01 10-5 10-4 10-3 t, RECTANGULAR PULSE DURATION (s) FIGURE 1. SAFE OPERATING AREA CURVE FIGURE 2. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE TC = +25oC FOR TEMPERATURES ABOVE +25oC DERATE PEAK CURRENT AS FOLLOWS: I=I 175 - T C 25 ---------------------- 150 80 70 ID, DRAIN CURRENT (A) 60 50 40 30 20 10 0 25 50 75 100 150 IDM, PEAK CURRENT CAPABILITY (A) 1000 VGS = 10V 100 TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION 10-4 10-3 10-2 10-1 t, PULSE WIDTH (s) 100 101 125 TC, CASE TEMPERATURE (oC) 175 50 10-5 FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs TEMPERATURE FIGURE 4. PEAK CURRENT CAPABILITY PULSE DURATION = 250s, TC = +25oC ID(ON), ON-STATE DRAIN CURRENT (A) 200 VGS = 20V ID, DRAIN CURRENT (A) 160 VGS = 10V VGS = 8V VGS = 7V VDD = 15V 200 PULSE TEST PULSE DURATION = 250s DUTY CYCLE = 0.5% MAX 160 -55oC +25oC +175oC 120 VGS = 6V 80 120 80 40 VGS = 5V VGS = 4.5V 40 0 0 1.0 2.0 3.0 4.0 5.0 0 0 2.0 4.0 6.0 8.0 VGS, GATE-TO-SOURCE VOLTAGE (V) 10.0 VDS, DRAIN-TO-SOURCE VOLTAGE (V) FIGURE 5. TYPICAL SATURATION CHARACTERISTICS FIGURE 6. TYPICAL TRANSFER CHARACTERISTICS 3-53 RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM Typical Performance Curves (Continued) rDS(ON), NORMALIZED ON RESISTANCE 2.5 PULSE DURATION = 250s, VGS = 10V, ID = 70A 2.0 VGS(TH), NORMALIZED GATE THRESHOLD VOLTAGE VGS = VDS, ID = 250A 2.0 1.5 1.5 1.0 1.0 0.5 0.5 0.0 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE (oC) 200 0.0 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE (oC) 200 FIGURE 7. NORMALIZED rDS(ON) vs JUNCTION TEMPERATURE FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE BVDSS, NORMALIZED DRAIN-TO-SOURCE BREAKDOWN VOLTAGE POWER DISSIPATION MULTIPLIER -40 0 40 80 120 160 200 2.0 ID = 250A 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 25 1.5 1.0 0.5 0.0 -80 TJ , JUNCTION TEMPERATURE (oC) 125 50 75 100 TC , CASE TEMPERATURE (oC) 150 175 FIGURE 9. NORMALIZED DRAIN-SOURCE BREAKDOWN VOLTAGE vs JUNCTION TEMPERATURE VGS = 0V, FREQUENCY (f) = 1MHz FIGURE 10. NORMALIZED POWER DISSIPATION vs TEMPERATURE DERATING CURVE 60 VDS , DRAIN-SOURCE VOLTAGE (V) VDD = BVDSS 10 VGS , GATE-SOURCE VOLTAGE (V) 5000 VDD = BVDSS 45 C, CAPACITANCE (pF) 4000 CISS 3000 7.5 30 0.75 BVDSS 0.50 BVDSS 0.25 BVDSS RL = 0.86 IG(REF) = 2.2mA VGS = 10V G ( REF ) 20 -------------------I G ( ACT ) I t, TIME (s) G ( REF ) 80 -------------------I G ( ACT ) I 5.0 2000 COSS 1000 CRSS 0 0 5 10 15 20 VDS, DRAIN-TO-SOURCE VOLTAGE (V) 25 15 2.5 0 0 FIGURE 11. TYPICAL CAPACITANCE vs VOLTAGE FIGURE 12. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT. REFER TO HARRIS APPLICATION NOTES AN7254 AND AN7260 3-54 RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM Typical Performance Curves (Continued) 300 IAS, AVALANCHE CURRENT (A) If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R 0 tAV = (L/R) ln [(IAS*R)/(1.3*RATED BVDSS-VDD) +1] STARTING TJ = +25oC 100 STARTING TJ = +150oC 10 0.01 1 0.1 tAV, TIME IN AVALANCHE (ms) 10 FIGURE 13. UNCLAMPED INDUCTIVE SWITCHING REFER TO HARRIS APPLICATION NOTES AN9321 AND AN9322 Test Circuits and Waveforms VDS tP L IAS VARY tP TO OBTAIN REQUIRED PEAK IAS VGS DUT tP RG + BVDSS VDS VDD VDD 0V IL 0.01 tAV FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 15. UNCLAMPED ENERGY WAVEFORMS VDD RL VDS VDS VGS tON tD(ON) tR 90% tOFF tD(OFF) tF 90% 10% 10% 90% 0V RGS DUT VGS 10% 50% PULSE WIDTH 50% FIGURE 16. RESISTIVE SWITCHING TEST CIRCUIT FIGURE 17. RESISTIVE SWITCHING WAVEFORMS 3-55 RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM Temperature Compensated PSPICE Model for the RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM .SUBCKT RFG70N06 2 1 3 ; CA 12 8 5.56e-9 CB 15 14 5.30e-9 CIN 6 8 2.63e-9 DBODY 7 5 DBDMOD DBREAK 5 11 DBKMOD DPLCAP 10 5 DPLCAPMOD EBREAK 11 7 17 18 65.18 EDS 14 8 5 8 1 EGS 13 8 6 8 1 ESG 6 10 6 8 1 EVTO 20 6 18 8 1 RLGATE rev 3/20/92 RLDRAIN DPLCAP 10 LDRAIN RSCL2 RSCL1 + 51 5 51 ESCL DBREAK 5 2 DRAIN ESG + GATE 1 LGATE EVTO 20 + 18 8 6 8 16 VTO 50 RDRAIN 11 EBREAK 17 18 MOS2 DBODY + 6 + 21 MOS1 - IT 8 17 1 LDRAIN 2 5 1e-9 LGATE 1 9 3.10e-9 LSOURCE 3 7 1.82e-9 9 RGATE RIN CIN 8 RSOURCE 7 RLSOURCE 3 SOURCE LSOURCE MOS1 16 6 8 8 MOSMOD M = 0.99 MOS2 16 21 8 8 MOSMOD M = 0.01 12 S1A 13 8 S1B CA + EGS 6 8 14 13 S2A 15 17 S2B 13 CB + 14 EDS 5 8 IT RBREAK 18 RVTO 19 VBAT + RBREAK 17 18 RBKMOD 1 RDRAIN 50 16 RDSMOD 4.66e-3 RLDRAIN 2 5 10 RGATE 9 20 1.21 RLGATE 1 9 31 RIN 6 8 1e9 RSOURCE 8 7 RDSMOD 3.92e-3 RLSOURCE 3 7 18.2 RVTO 18 19 RVTOMOD 1 S1A S1B S2A S2B 6 12 13 8 S1AMOD 13 12 13 8 S1BMOD 6 15 14 13 S2AMOD 13 15 14 13 S2BMOD - - VBAT 8 19 DC 1 VTO 21 6 0.605 .MODEL DBDMOD D (IS = 7.91e-12 RS = 3.87e-3 TRS1 = 2.71e-3 TRS2 = 2.50e-7 CJO = 4.84e-9 TT = 4.51e-8) .MODEL DBKMOD D (RS = 3.9e-2 TRS1 =1.05e-4 TRS2 = 3.11e-5) .MODEL DPLCAPMOD D (CJO = 4.8e-9 IS = 1e-30 N = 10) .MODEL MOSMOD NMOS (VTO = 3.46 KP = 47 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u) .MODEL RBKMOD RES (TC1 = 8.46e-4 TC2 = -8.48e-7) .MODEL RDSMOD RES (TC1 = 2.23e-3 TC2 = 6.56e-6) .MODEL RVTOMOD RES (TC1 = -3.29e-3 TC2 = 3.49e-7) .MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -8.35 VOFF= -6.35) .MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -6.35 VOFF= -8.35) .MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -2.0 VOFF= 3.0) .MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 3.0 VOFF= -2.0) .ENDS NOTE: For further discussion of the PSPICE model, consult A New PSPICE Sub-circuit for the Power MOSFET Featuring Global Temperature Options; written by William J. Hepp and C. Frank Wheatley. 3-56 |
Price & Availability of RFP70N06
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