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SI9400DY
Vishay Siliconix
P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
-20
rDS(on) (W)
0.25 @ VGS = -10 V 0.40 @ VGS = -4.5 V
ID (A)
"2.5 "2.0
S
S
SO-8
NC S S G 1 2 3 4 Top View DDDD P-Channel MOSFET 8 7 6 5 D D D D
G
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C
Symbol
VDS VGS ID IDM IS PD TJ, Tstg
Limit
-20 "20 "2.5 "2.0 "10 -2.0 2.5
Unit
V
A
W 1.6 -55 to 150 _C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta Notes a. Surface Mounted on FR4 Board, t v 10 sec. For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 70119 S-55458--Rev. K, 02-Mar-98 www.vishay.com S FaxBack 408-970-5600
Symbol
RthJA
Limit
50
Unit
_C/W
1
SI9400DY
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb Drain-Source On-State Resistanceb Forward Transconductanceb Diode Forward Voltageb VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = -250 mA VDS = 0 V, VGS = "20 V VDS = -16 V, VGS = 0 V VDS = -16 V, VGS = 0 V, TJ = 55_C VDS v -5 V, VGS = -10 V VGS = -10 V, ID = 1 A VGS = -4.5 V, ID = 0.5 A VDS = -15 V, ID = -2.5 A IS = -1.25 A, VGS = 0 V -10 0.13 0.22 2.5 -0.8 -1.6 0.25 0.40 -1.0 "100 -2 -25 V nA mA A W S V
Symbol
Test Condition
Min
Typa
Max
Unit
Dynamica
Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = 2 A, di/dt = 100 A/ms VDD = -10 V, RL = 10 W 10 V, ID ^ -1 A, VGEN = -10 V RG = 6 W 1A 10 V, VDS = -10 V, VGS = -10 V ID = -2.0 A 10 V 10 V, 20 6.8 1.3 1.6 10 12 20 10 69 40 40 90 50 100 ns 25 nC C
Notes a. For design aid only; not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
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Document Number: 70119 S-55458--Rev. K, 02-Mar-98
SI9400DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
15 VGS = 10 - 7 V 12 I D - Drain Current (A) 6V I D - Drain Current (A) 8 25_C 9 5V 6 6 125_C 10 TC = -55_C
Transfer Characteristics
4
3
4V 3V
2
0 0 2 4 6 8 10
0 0 1 2 3 4 5 6 7
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
1.0 700 600 r DS(on) - On-Resistance ( ) 0.8 C - Capacitance (pF) 500 400 Coss 300
Capacitance
0.6
0.4
VGS = 4.5 V
Ciss 200 100 Crss
0.2
VGS = 10 V
0 0 1 2 3 4 5
0 0 5 10 15 20
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
10
Gate Charge
2.0
On-Resistance vs. Junction Temperature
V GS - Gate-to-Source Voltage (V)
6
r DS(on) - On-Resistance ( ) (Normalized)
8
VDS =10 V ID = 2 A
1.6
VGS = 10 V ID = 1.0 A
1.2
4
0.8
2
0.4
0 0 2 4 6 8
0 -50
-25
0
25
50
75
100
125
150
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (_C)
Document Number: 70119 S-55458--Rev. K, 02-Mar-98
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SI9400DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
20 0.8
On-Resistance vs. Gate-to-Source Voltage
10 I S - Source Current (A) TJ = 150_C
r DS(on) - On-Resistance ( )
0.6
ID = 2.5 A
TJ = 25_C
0.4
0.2
1 0 0.4 0.8 1.2 1.6 2.0 2.4
0 0 2 4 6 8 10
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
1.0
Threshold Voltage
100
Single Pulse Power
0.5 V GS(th) Variance (V)
ID = 250 A
80
60 0.0 40 -0.5 20
-1 -50
-25
0
25
50
75
100
125
150
0 0.001 0.01 0.1 1 10
TJ - Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance
0.2
Notes:
0.1 0.1 0.05 0.02
PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 62.5_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted
Single Pulse 0.01 10-4
10-3
10-2
10-1
1
10
30
Square Wave Pulse Duration (sec)
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Document Number: 70119 S-55458--Rev. K, 02-Mar-98

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