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 INTEGRATED CIRCUITS
74LVT10 3.3V Triple 3-input NAND gate
Product specification IC24 Data Handbook 1996 May 29
Philips Semiconductors
Philips Semiconductors
Product specification
3.3V Triple 3-input NAND gate
74LVT10
QUICK REFERENCE DATA
SYMBOL PARAMETER Propagation delay An, Bn, Cn to Yn Input capacitance Total supply current CONDITIONS Tamb = 25C; GND = 0V CL = 50pF; VCC = 3.3V TYPICAL UNIT
LOGIC SYMBOL (IEEE/IEC)
1 2
&
12
tPLH tPHL
3.8 3.3
13
ns
3 4 6
CIN ICCL
VI = 0V or 3.0V Outputs Low; VCC = 3.6V
2 1
pF mA
5 9 10 11 8
PIN CONFIGURATION
A0 B0 A1 B1 C1 Y1 GND 1 2 3 4 5 6 7 14 13 12 11 10 9 8 VCC C0 Y0
SV00059
LOGIC DIAGRAM
1 A0 2 12 Y0 13 B0 C0 A1 B1 C1 3 4 5 9 10 11 8 Y2 6 Y1
C2 B2 A2 Y2
SA00346
PIN DESCRIPTION
PIN NUMBER 1, 2, 3, 4, 5, 9, 10, 11, 13 6, 8, 12 7 14
A2
SYMBOL An, Bn, Cn Yn GND VCC
NAME AND FUNCTION Data inputs Data outputs Ground (0V) Positive supply voltage
VCC = Pin 14 GND = Pin 7
B2 C2
SA00348
FUNCTION TABLE
INPUTS Dna L L Dnb L L H H L L H Dnc L H L H L H L H OUTPUTS Qn H H H H H H H L
LOGIC SYMBOL
1 2 13 3 4 5 9 10 11
L L H H H
A0
B0
C0
A1
B1
C1
A2
B2
C2
Y0
Y1
Y2
VCC = Pin 14 GND = Pin 7
12
6
8
H H NOTES: H = High voltage level L = Low voltage level
SA00347
ORDERING INFORMATION
PACKAGES 14-Pin Plastic SO 14-Pin Plastic SSOP 14-Pin Plastic TSSOP TEMPERATURE RANGE -40C to +85C -40C to +85C -40C to +85C OUTSIDE NORTH AMERICA 74LVT10 D 74LVT10 DB 74LVT10 PW NORTH AMERICA 74LVT10 D 74LVT10 DB 74LVT10PW DH DWG NUMBER SOT108-1 SOT337-1 SOT402-1
1996 May 10
2
853-1832 16801
Philips Semiconductors
Product specification
3.3V Triple 3-input NAND gate
74LVT10
ABSOLUTE MAXIMUM RATINGS1, 2
SYMBOL VCC IIK VI IOK VOUT IO OUT Tstg PARAMETER DC supply voltage DC input diode current DC input voltage3 VO < 0 Output in Off or High state Output in High state DC output current Output in Low state Storage temperature range 64 -65 to 150 C VI < 0 CONDITIONS RATING -0.5 to +4.6 -50 -0.5 to +7.0 -50 -0.5 to +7.0 -32 mA UNIT V mA V mA V
DC output diode current DC output voltage3
NOTES: 1. Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. 2. The performance capability of a high-performance integrated circuit in conjunction with its thermal environment can create junction temperatures which are detrimental to reliability. The maximum junction temperature of this integrated circuit should not exceed 150C. 3. The input and output negative voltage ratings may be exceeded if the input and output clamp current ratings are observed.
RECOMMENDED OPERATING CONDITIONS
LIMITS SYMBOL VCC VI VIH VIL IOH IOL t/v Tamb DC supply voltage Input voltage High-level input voltage Low-level Input voltage High-level output current Low-level output current Input transition rise or fall rate; Outputs enabled Operating free-air temperature range -40 PARAMETER MIN 2.7 0 2.0 0.8 -20 32 10 +85 MAX 3.6 5.5 V V V V mA mA ns/V C UNIT
1996 May 10
3
Philips Semiconductors
Product specification
3.3V Triple 3-input NAND gate
74LVT10
DC ELECTRICAL CHARACTERISTICS
Over recommended operating conditions Voltages are referenced to GND (ground = 0V) LIMITS SYMBOL PARAMETER TEST CONDITIONS Temp = -40C to +85C MIN VIK Input clamp voltage VCC = 2.7V; IIK = -18mA VCC = 2.7 to 3.6V; IOH = -100A VOH High-level output voltage VCC = 2.7V; IOH = -6mA VCC = 3.0V; IOH = -20mA VCC = 2.7V; IOL = 100A VOL Low-level output voltage VCC = 2.7V; IOL = 24mA VCC = 3.0V; IOL = 32mA II IOFF ICCH Quiescent supply current ICCL ICC CI Additional supply current per input pin2 Input capacitance Input leakage current Output off current VCC = 0 or 3.6V; VI = 5.5V VCC = 3.6V; VI = VCC or GND VCC = 0V; VI or VO = 0 to 4.5V VCC = 3.6V; Outputs High, VI = GND or VCC, IO = 0 VCC = 3.6V; Outputs Low, VI = GND or VCC, IO = 0 VCC = 3V to 3.6V; One input at VCC-0.6V, Other inputs at VCC or GND VI = 3V or 0 VCC-0.2 2.4 2.0 VCC 2.5 2.3 0.05 0.3 0.35 0.1 0.01 1 0.001 1 0.1 2 0.2 0.5 0.5 10 1 100 0.02 mA 2 0.2 mA pF A A V V TYP1 MAX -1.2 V UNIT
NOTES: 1. All typical values are at VCC = 3.3V and Tamb = 25C. 2. This is the increase in supply current for each input at the specificed voltage level other than VCC or GND.
AC CHARACTERISTICS
GND = 0V; tR = tF = 2.5ns; CL = 50pF, RL = 500; Tamb = -40C to +85C. LIMITS SYMBOL PARAMETER WAVEFORM MIN tPLH tPHL Propagation delay An, Bn, Cn to Yn 1 1.0 1.0 VCC = 3.3V 0.3V TYP1 3.8 3.3 MAX 5.2 4.4 VCC = 2.7V MAX 6.2 4.4 ns UNIT
NOTE: 1. All typical values are at VCC = 3.3V and Tamb = 25C.
AC WAVEFORMS
VM = 1.5V, VIN = GND to 2.7V
Dna, Dnb, Dnc
VM tPHL
VM tPLH
Qn
VM
VM
SF00064
Waveform 1. Propagation Delay for Inverting Outputs
1996 May 10
4
Philips Semiconductors
Product specification
3.3V Triple 3-input NAND gate
74LVT10
TEST CIRCUIT AND WAVEFORMS
VCC 90% NEGATIVE PULSE VIN PULSE GENERATOR RT D.U.T. CL RL POSITIVE PULSE VOUT VM 10% tTHL (tF) tTLH (tR) 90% VM tW 90% VM 10% 0V 10% 0V tTLH (tR) tTHL (tF) AMP (V) tW VM 90% AMP (V)
Test Circuit for Outputs
10%
VM = 1.5V Input Pulse Definition
DEFINITIONS
RL = Load resistor; see AC CHARACTERISTICS for value. CL = Load capacitance includes jig and probe capacitance; see AC CHARACTERISTICS for value. RT = Termination resistance should be equal to ZOUT of pulse generators.
INPUT PULSE REQUIREMENTS FAMILY Amplitude 74LVT 2.7V Rep. Rate 10MHz tW tR tF
500ns 2.5ns 2.5ns
SV00022
1996 May 10
5
Philips Semiconductors
Product specification
3.3V Triple 3-input NAND gate
74LVT10
SO14: plastic small outline package; 14 leads; body width 3.9 mm
SOT108-1
1995 May 08
6
Philips Semiconductors
Product specification
3.3V Triple 3-input NAND gate
74LVT10
SSOP14: plastic shrink small outline package; 14 leads; body width 5.3 mm
SOT337-1
1995 May 08
7
Philips Semiconductors
Product specification
3.3V Triple 3-input NAND gate
74LVT10
TSSOP14: plastic thin shrink small outline package; 14 leads; body width 4.4 mm
SOT402-1
1995 May 08
8
Philips Semiconductors
Product specification
3.3V Triple 3-input NAND gate
74LVT10
NOTES
1995 May 08
9
Philips Semiconductors
Product specification
3.3V Triple input NAND gate
74LVT10
DEFINITIONS
Data Sheet Identification
Objective Specification
Product Status
Formative or in Design
Definition
This data sheet contains the design target or goal specifications for product development. Specifications may change in any manner without notice. This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. This data sheet contains Final Specifications. Philips Semiconductors reserves the right to make changes at any time without notice, in order to improve design and supply the best possible product.
Preliminary Specification
Preproduction Product
Product Specification
Full Production
Philips Semiconductors and Philips Electronics North America Corporation reserve the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. LIFE SUPPORT APPLICATIONS Philips Semiconductors and Philips Electronics North America Corporation Products are not designed for use in life support appliances, devices, or systems where malfunction of a Philips Semiconductors and Philips Electronics North America Corporation Product can reasonably be expected to result in a personal injury. Philips Semiconductors and Philips Electronics North America Corporation customers using or selling Philips Semiconductors and Philips Electronics North America Corporation Products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors and Philips Electronics North America Corporation for any damages resulting from such improper use or sale. Philips Semiconductors 811 East Arques Avenue P.O. Box 3409 Sunnyvale, California 94088-3409 Telephone 800-234-7381 Philips Semiconductors and Philips Electronics North America Corporation register eligible circuits under the Semiconductor Chip Protection Act. (c) Copyright Philips Electronics North America Corporation 1995 All rights reserved. Printed in U.S.A. (print code) Document order number: Date of release: July 1994 9397-750-04844


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